Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Abstract: Apparatus for physical vapor deposition are provided herein. In some embodiments, a clamp for use in a physical vapor deposition (PVD) chamber includes a clamp body and an outwardly extending shelf that extends from the clamp body, wherein the outwardly extending shelf includes a clamping surface configured to clamp an isolator ring to a chamber body of the PVD chamber, wherein a height of the outwardly extending shelf is about 15 percent to about 40 percent of a height of the clamp body and wherein the clamp body includes a central opening configured to retain a fastener therein.

Abstract: Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion, a target disposed on the central portion, a plurality of recesses formed in the support portion; and a plurality of self-retained low-friction pads partially disposed in the plurality of recesses, wherein each of the plurality of low-friction pads includes a solid body portion, and a self-retaining stem that extends outward from a bottom of the solid body portion, wherein the self-retaining stem includes a first stem portion disposed in the first through-hole portion, and a second stem portion disposed within the second through-hole portion.

Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Abstract: Embodiments of a process shield for use in a process chamber are provided herein. In some embodiments, a process shield for use in a process chamber includes a body having a cylindrical shape, wherein the body includes an upper portion and a lower portion, the upper portion having an outer lip and the lower portion extending downward and radially inward from the upper portion, wherein the outer lip includes a plurality of openings to accommodate fasteners, a plurality of alignment slots extending radially inward from an outer surface of the outer lip, and a notched lower peripheral edge, and wherein a lower surface of the outer lip includes a plurality of grooves.

Abstract: Apparatus for physical vapor deposition are provided herein. In some embodiments, a clamp for use in a physical vapor deposition (PVD) chamber includes a clamp body and an outwardly extending shelf that extends from the clamp body, wherein the outwardly extending shelf includes a clamping surface configured to clamp an isolator ring to a chamber body of the PVD chamber, wherein a height of the outwardly extending shelf is about 15 percent to about 40 percent of a height of the clamp body and wherein the clamp body includes a central opening configured to retain a fastener therein.

Abstract: Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion, a target disposed on the central portion, a plurality of recesses formed in the support portion; and a plurality of self-retained low-friction pads partially disposed in the plurality of recesses, wherein each of the plurality of low-friction pads includes a solid body portion, and a self-retaining stem that extends outward from a bottom of the solid body portion, wherein the self-retaining stem includes a first stem portion disposed in the first through-hole portion, and a second stem portion disposed within the second through-hole portion.

Abstract: Embodiments of a process shield for use in a process chamber are provided herein. In some embodiments, a process shield for use in a process chamber includes a body having a cylindrical shape, wherein the body includes an upper portion and a lower portion, the upper portion having an outer lip and the lower portion extending downward and radially inward from the upper portion, wherein the outer lip includes a plurality of openings to accommodate fasteners, a plurality of alignment slots extending radially inward from an outer surface of the outer lip, and a notched lower peripheral edge, and wherein a lower surface of the outer lip includes a plurality of grooves.

Abstract: Embodiments of process chambers are provided herein. In some embodiments, a process chamber includes: a chamber wall defining an inner volume within the process chamber; a substrate support disposed in the inner volume having a support surface to support a substrate, wherein the inner volume includes a processing volume disposed above the support surface and a non-processing volume disposed at least partially below the support surface; a gas supply plenum fluidly coupled to the processing volume via a gas supply channel disposed above the support surface; a pumping plenum fluidly coupled to the processing volume via an exhaust channel disposed above the support surface; and a sealing apparatus configured to fluidly isolate the processing volume from the non-processing volume when the substrate support is in a processing position, wherein the processing volume and the non-processing volume are fluidly coupled when the substrate support is in a non-processing position.

Abstract: A support system for use in a processing chamber is provided. The support system includes two or more moveable substrate supports, which include a substrate support surface and a robot, wherein the robot is configured to move the substrate support surface along a movement path. The substrate support includes a halo, and the halo protects the underlying components of the processing chamber from unwanted deposition, while the substrate support surface is moving along the movement path. The substrate support protects processing chamber components from deposition, reducing cleaning time and reducing the need for repairs of the components of the processing chamber.

Abstract: A shield kit for use in a process chamber includes a body configured to be inserted into a source disposed on a top surface of the process chamber. The body includes a top plate, a pair of far plates connected to the top plate, and a pair of side plates connected to the pair of far plates. The shield kit further includes a cooling manifold disposed on an outer surface the top plate within an opening of the source, and a vacuum seal disposed on the outer surface of the top plate and configured to vacuum seal the opening of the source. At least one of the pair of side plates has a gap extending that is aligned with at least one cathode opening on a top surface of the source.

Abstract: A moveable substrate support for use in a processing chamber is provided. The moveable substrate support includes a substrate support surface and a robot, wherein the robot is configured to move the substrate support surface along a movement path. The substrate support includes a halo, and the halo protects the underlying components of the processing chamber from unwanted deposition, while the substrate support surface is moving along the movement path. The substrate support protects processing chamber components from deposition, reducing cleaning time and reducing the need for repairs of the components of the processing chamber.

Abstract: Apparatus and method for physical vapor deposition (PVD) are provided. The apparatus can include a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; a substrate support having a support surface to support the substrate at a non-perpendicular angle to the stream of material flux, wherein the substrate support and linear PVD source are movable with respect to each other along an axis that is parallel to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move completely over a surface of the substrate disposed on the substrate support during operation; and a selectively sealable aperture disposed between the linear PVD source and the substrate support, the selectively sealable aperture including two movable shields that are independently movable and configured to control a size and location of the selectively sealable aperture.

Abstract: Embodiments of process chambers are provided herein. In some embodiments, a process chamber includes: a chamber wall defining an inner volume within the process chamber; a substrate support disposed in the inner volume having a support surface to support a substrate, wherein the inner volume includes a processing volume disposed above the support surface and a non-processing volume disposed at least partially below the support surface; a gas supply plenum fluidly coupled to the processing volume via a gas supply channel disposed above the support surface; a pumping plenum fluidly coupled to the processing volume via an exhaust channel disposed above the support surface; and a sealing apparatus configured to fluidly isolate the processing volume from the non-processing volume when the substrate support is in a processing position, wherein the processing volume and the non-processing volume are fluidly coupled when the substrate support is in a non-processing position.