Abstract: A plasma-generation system is provided that includes a variable-frequency microwave generator configured to generate microwave power and a plasma applicator configured to use the microwave power from the microwave generator to (i) ignite a process gas therein for initiating a plasma in a plasma ignition process and (ii) maintain the plasma in a steady state process. The system also includes a coarse tuner connected between the microwave generator and the plasma applicator. At least one physical parameter of the coarse tuner is adapted to be set to achieve coarse impedance matching between the microwave generator and the plasma generated during both the plasma ignition process and the steady state process. A load impedance of the plasma generated during the plasma ignition process and the steady state process is adapted to vary. The microwave generator is configured to tune an operating frequency at the set physical parameter of the coarse tuner.

Abstract: A plasma-generation system is provided that includes a variable-frequency microwave generator configured to generate microwave power and a plasma applicator configured to use the microwave power from the microwave generator to (i) ignite a process gas therein for initiating a plasma in a plasma ignition process and (ii) maintain the plasma in a steady state process. The system also includes a coarse tuner connected between the microwave generator and the plasma applicator. At least one physical parameter of the coarse tuner is adapted to be set to achieve coarse impedance matching between the microwave generator and the plasma generated during both the plasma ignition process and the steady state process. A load impedance of the plasma generated during the plasma ignition process and the steady state process is adapted to vary. The microwave generator is configured to tune an operating frequency at the set physical parameter of the coarse tuner.

Abstract: A microwave system for use within a microwave-assisted thermal atomic layer deposition system is disclosed which include at least one microwave generator configured to output at least one microwave signal, at least one waveguide assembly in communication with the at least one microwave generator and configured to receive the microwave signal, one or more isolators positioned within the waveguide assembly and configured to reduce or eliminate backscatter of the microwave signal from the waveguide assembly to the at least one microwave generator, at least one tuning device in positioned within the waveguide assembly and configured receive the microwave signal from the isolator and tune the microwave signal, and at least one microwave delivery device in communication with the waveguide assembly and configured to direct at least a portion of the microwave signal into at least one processing chamber of the microwave-assisted thermal atomic layer deposition system.

Abstract: A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.

Abstract: A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.

Abstract: Methods and systems are provided for heating a dielectric preform material. An exemplary method includes inserting the preform material into a microwave cavity along a longitudinal axis of the microwave cavity and supplying the microwave cavity with microwave power having a frequency that corresponds to an axial wavelength along the longitudinal axis of the microwave cavity. The axial wavelength is greater than a length of the preform material along the longitudinal axis. The method includes heating the preform material within the microwave cavity by the microwave power and determining temperatures of the preform material at one or more locations on a surface of the preform material. The method further includes adjusting, based on the temperatures of the preform material, the microwave frequency to achieve substantially uniform heating at least on a sidewall of the preform material along the longitudinal axis.

Abstract: A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.

Abstract: Methods and systems are provided for heating a dielectric preform material. An exemplary method includes inserting the preform material into a microwave cavity along a longitudinal axis of the microwave cavity and supplying the microwave cavity with microwave power having a frequency that corresponds to an axial wavelength along the longitudinal axis of the microwave cavity. The axial wavelength is greater than a length of the preform material along the longitudinal axis. The method includes heating the preform material within the microwave cavity by the microwave power and determining temperatures of the preform material at one or more locations on a surface of the preform material. The method further includes adjusting, based on the temperatures of the preform material, the microwave frequency to achieve substantially uniform heating at least on a sidewall of the preform material along the longitudinal axis.

Abstract: Methods and systems are provided for heating a dielectric preform material. An exemplary method includes inserting the preform material into a microwave cavity along a longitudinal axis of the microwave cavity and supplying the microwave cavity with microwave power having a frequency that corresponds to an axial wavelength along the longitudinal axis of the microwave cavity. The axial wavelength is greater than a length of the preform material along the longitudinal axis. The method includes heating the preform material within the microwave cavity by the microwave power and determining temperatures of the preform material at one or more locations on a surface of the preform material. The method further includes adjusting, based on the temperatures of the preform material, the microwave frequency to achieve substantially uniform heating at least on a sidewall of the preform material along the longitudinal axis.

Abstract: An apparatus for abatement of gases is provided. The apparatus includes a toroidal plasma chamber having a plurality of inlets and an outlet, and at least one chamber wall. One or more magnetic cores are disposed relative to the toroidal plasma chamber. The plasma chamber confines a toroidal plasma. A second gas inlet is positioned on the toroidal plasma chamber between a first gas inlet and the gas outlet at a distance d from the gas outlet, such that a toroidal plasma channel volume between the first gas inlet and the second gas inlet in the is substantially filled by the inert gas, the distance d based on a desired residence time of the gas to be abated.

Abstract: An apparatus for abatement of gases is provided. The apparatus includes a toroidal plasma chamber having a plurality of inlets and an outlet, and at least one chamber wall. One or more magnetic cores are disposed relative to the toroidal plasma chamber. The plasma chamber confines a toroidal plasma. A second gas inlet is positioned on the toroidal plasma chamber between a first gas inlet and the gas outlet at a distance d from the gas outlet, such that a toroidal plasma channel volume between the first gas inlet and the second gas inlet in the is substantially filled by the inert gas, the distance d based on a desired residence time of the gas to be abated.

Abstract: An apparatus for abatement of gases is provided. The apparatus includes a toroidal plasma chamber having a plurality of inlets and an outlet, and at least one chamber wall. One or more magnetic cores are disposed relative to the toroidal plasma chamber. The plasma chamber confines a toroidal plasma. A second gas inlet is positioned on the toroidal plasma chamber between a first gas inlet and the gas outlet at a distance d from the gas outlet, such that a toroidal plasma channel volume between the first gas inlet and the second gas inlet in the is substantially filled by the inert gas, the distance d based on a desired residence time of the gas to be abated.

Abstract: Methods and systems are provided for heating a dielectric preform material. An exemplary method includes inserting the preform material into a microwave cavity along a longitudinal axis of the microwave cavity and supplying the microwave cavity with microwave power having a frequency that corresponds to an axial wavelength along the longitudinal axis of the microwave cavity. The axial wavelength is greater than a length of the preform material along the longitudinal axis. The method includes heating the preform material within the microwave cavity by the microwave power and determining temperatures of the preform material at one or more locations on a surface of the preform material. The method further includes adjusting, based on the temperatures of the preform material, the microwave frequency to achieve substantially uniform heating at least on a sidewall of the preform material along the longitudinal axis.

Abstract: An apparatus for generating plasma includes a plasma discharge tube and a conductive coil helically wound around an outer surface of the plasma discharge tube. A waveguide is coupled to a microwave cavity surrounding the plasma discharge tube to guide the microwave energy into the plasma discharge tube such that the plasma is generated in the plasma discharge tube. The waveguide is positioned such that an electric field of the microwave energy is oriented at a predetermined angle with respect to the longitudinal axis of the plasma discharge tube. A resulting induced electric current in the conductive coil affects power absorption in the plasma discharge tube, the predetermined angle being selectable such that power absorption in the plasma discharge tube is according to a predetermined profile with respect to the longitudinal axis of the plasma discharge tube.

Abstract: An apparatus for abatement of gases is provided. The apparatus includes a toroidal plasma chamber having a plurality of inlets and an outlet, and at least one chamber wall. One or more magnetic cores are disposed relative to the toroidal plasma chamber. The plasma chamber confines a toroidal plasma. A second gas inlet is positioned on the toroidal plasma chamber between a first gas inlet and the gas outlet at a distance d from the gas outlet, such that a toroidal plasma channel volume between the first gas inlet and the second gas inlet in the is substantially filled by the inert gas, the distance d based on a desired residence time of the gas to be abated.

Abstract: An apparatus for generating plasma includes a plasma discharge tube and a conductive coil helically wound around an outer surface of the plasma discharge tube. A waveguide is coupled to a microwave cavity surrounding the plasma discharge tube to guide the microwave energy into the plasma discharge tube such that the plasma is generated in the plasma discharge tube. The waveguide is positioned such that an electric field of the microwave energy is oriented at a predetermined angle with respect to the longitudinal axis of the plasma discharge tube. A resulting induced electric current in the conductive coil affects power absorption in the plasma discharge tube, the predetermined angle being selectable such that power absorption in the plasma discharge tube is according to a predetermined profile with respect to the longitudinal axis of the plasma discharge tube.

Abstract: A plasma chamber for use with a reactive gas source that includes a first conduit comprising a wall, an inlet, an outlet, an inner and outer surface, and a plurality of openings through the wall, the inlet receives a first gas for generating a reactive gas in the first conduit with a plasma formed in the first conduit. The plasma chamber also includes a second conduit that includes a wall, an inlet, and an inner surface. The first conduit is disposed in the second conduit defining a channel between the outer surface of the first conduit and the inner surface of the second conduit. A second gas provided to the inlet of the second conduit flows along the channel and through the plurality of openings of the wall of the first conduit into the first conduit to surround the reactive gas and plasma in the first conduit.

Abstract: A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a suppression disk half assembly comprising two suppression electrode plate disk halves that form a variable suppression aperture, a ground disk half assembly comprising two ground electrode plate disk halves that form an variable ground aperture, wherein the suppression disk half assembly is configured between the extraction electrode and the ground disk half assembly, wherein the suppression aperture and the ground aperture variable in the direction perpendicular to the ion beam direction of travel, and wherein the extraction electrode system is used with a pendulum reciprocating drive apparatus.

Abstract: A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a suppression disk half assembly comprising two suppression electrode plate disk halves that form a variable suppression aperture, a ground disk half assembly comprising two ground electrode plate disk halves that form an variable ground aperture, wherein the suppression disk half assembly is configured between the extraction electrode and the ground disk half assembly, wherein the suppression aperture and the ground aperture variable in the direction perpendicular to the ion beam direction of travel, and wherein the extraction electrode system is used with a pendulum reciprocating drive apparatus.

Abstract: An exemplary ion source for creating a stream of ions has an aluminum alloy arc chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A temperature sensor monitors temperatures within the arc chamber and provides a signal related to sensed temperature. A controller monitors sensed temperature as measured by the sensor and adjusts the temperature to maintain the sensed temperature within a range.