Abstract: An electrical connection material between conductors includes about 40 wt % to about 80 wt % of a urethane-modified acrylate resin, based on a total weight of the electrical connection material, the electrical connection material exhibiting, after curing, a tensile elongation of about 100% to about 500% and a yield point strain of about 10% to about 50% in a stress-strain curve.

Abstract: Provided is a cooperative communication technology of a target terminal and a cooperative terminal. In an environment in which interference exists between cells, cooperation between terminals may be performed in order to improve quality of signals that are received from a base station.

Abstract: A semiconductor device includes a substrate having a first area and a second area, a first transistor in the first area, a second transistor in the second area, an isolation layer between the first area and the second area, and at least one buried shield structure on the isolation layer.

Abstract: The present invention relates to multipurpose furniture which combines a bed and a desk, and is positioned between furniture facing each other. Since a turning apparatus for the multipurpose furniture is simplified, there is a reduction in all kinds of work processes and the work load required for turning of a turning member, of which a table surface and a mattress respectively used as a desk and a bed are formed on top and bottom, and manufacturing cost is decreased. In addition, when the multipurpose furniture is used as a bed, stability during sleep is increased and sleeping in comfort is doubled through minimization of the height from the surface.

Abstract: Disclosure relates to a board block for vehicles. A housing forms an outer appearance of the board block of the present invention. The housing includes a housing body and a housing cover. A interior space is formed in the housing body, and a first connection unit is formed at one side of an upper end of the housing body. The housing cover covers the upper end of the housing body and the first connection unit.

Abstract: A semiconductor device, including a substrate having first and second active regions, the first and second active regions being disposed on opposite sides of an isolation structure, and a bit line electrically coupled to a contact plug that is on the isolation structure between the first active region and the second active region, and electrically coupled to an active bridge pattern directly contacting at least one of the first and second active regions, wherein the contact plug is electrically coupled to the first active region and the second active region, and a bottom surface of the active bridge pattern is below a top surface of the first and second active regions.

Abstract: A semiconductor device is bonded by an anisotropic conductive film composition. The anisotropic conductive film composition includes an ethylene-vinyl acetate copolymer, a polyurethane resin, and organic fine particles. The anisotropic conductive film composition has a melt viscosity of about 2,000 to about 8,000 Pa·s at 80° C.

Abstract: Provided are non-volatile memory devices and methods of fabricating the same, including improved bit line and contact formation that may reduce resistance and parasitic capacitance, thereby reducing manufacturing costs and improving device performance. The non-volatile memory devices may include a substrate; a plurality of field regions formed on the substrate, each of the field regions including a homogeneous first field and a second field that is divided into two sub regions via a bridge region; an active region formed on the substrate and defined as having a string structure by the field regions, where at least two strings may be connected via one of the bridge regions; and a plurality of shared bit lines may be formed on the field regions and connected to the active region via bit line contacts, where the bit line contacts may be direct contacts.

Abstract: A semiconductor memory device and method of manufacturing the same, the device including string structures, the string structures including two or more adjacent string selection transistors connected in series to each other in a first direction and being spaced apart from one another in a second direction intersecting the first direction, the two or more string selection transistors having different threshold voltages; string selection lines, the string selection lines connecting the adjacent string selection transistors of the string structures in the second direction; and a bit line electrically connecting two or more adjacent string structures, wherein a device isolation layer between the adjacent string selection transistors in the second direction has recessed regions, and profiles of the recessed regions on respective sides of the string selection transistors are different from each other.

Abstract: Provided are non-volatile memory devices and methods of fabricating the same, including improved bit line and contact formation that may reduce resistance and parasitic capacitance, thereby reducing manufacturing costs and improving device performance. The non-volatile memory devices may include a substrate; a plurality of field regions formed on the substrate, each of the field regions including a homogeneous first field and a second field that is divided into two sub regions via a bridge region; an active region formed on the substrate and defined as having a string structure by the field regions, where at least two strings may be connected via one of the bridge regions; and a plurality of shared bit lines may be formed on the field regions and connected to the active region via bit line contacts, where the bit line contacts may be direct contacts.

Abstract: Provided is a nonvolatile memory device having a common bit line structure. The nonvolatile memory device includes multiple unit elements having a NAND cell array structure, arranged in each of multiple memory strings, and each including a control gate and a charge storage layer. Multiple common bit lines are each commonly connected to ends of each of one pair of memory strings among the memory strings. Provided are a first selection transistor having a first driving voltage and multiple second selection transistors connected in series to the first selection transistors and having a second driving voltage that is lower than the first driving voltage. The first selection transistor and the second selection transistors are arranged between the common bit lines and the unit elements of the of memory strings.

Abstract: Provided is a cooperative communication technology of a target terminal and a cooperative terminal. In an environment in which interference exists between cells, cooperation between terminals may be performed in order to improve quality of signals that are received from a base station.

Abstract: A hard disk drive has a disk, a spindle motor for rotating the disk, a head stack assembly including a swing arm and a head slider disposed at a leading end of the swing arm, and a controller operatively connected to the head slider. The head slider is positioned by the swing arm over the disk and floats in such position during a read/write operation in which data is being read from or written onto the disk. The head slider has a head slider body, a magnetic head embedded in the body, and at least one resistive heating element that generates heat when current is supplied thereto. The heat causes the body of the head slider to thermally expand in such a way that the profile of the disk-facing side of the body of the head slider changes. The controller controls the height of the head slider relative to the disk by controlling the supplying of current to the resistive heating element(s).

Abstract: A composition for a circuit connection film and a circuit connection film using the same, the composition including a binder resin including an acrylate modified urethane resin, a carboxyl modified acrylonitrile butadiene rubber, and an acrylic copolymer, the acrylic copolymer having an acid value of about 1 to about 100 mg KOH/g, a radical polymerizable compound including at least one of an isocyanurate acrylate compound and a compound having a (meth)acrylate group, and an organic peroxide.

Abstract: An anisotropic conductive adhesive composition includes an acrylic rubber binder having a weight average molecular weight of about 100,000 to about 1,000,000, a first component including at least one of a mono(meth)acrylate compound and a di(meth)acrylate compound, a second component including at least one of a tri(meth)acrylate compound and a compound having more than three (meth)acrylate groups, an organic peroxisde, and conductive particles. The second component is present in an amount of about 1 to about 10% by weight, based on the total weight of the acrylic rubber, the first component, the second component, the organic peroxide, and the conductive particles.

Abstract: An electrical connection material between conductors includes about 40 wt % to about 80 wt % of a urethane-modified acrylate resin, based on a total weight of the electrical connection material, the electrical connection material exhibiting, after curing, a tensile elongation of about 100% to about 500% and a yield point strain of about 10% to about 50% in a stress-strain curve.

Abstract: In a method of forming a pattern structure, a cut-off portion of the node-separated line of a semiconductor device is formed by a double patterning process by using a connection portion of the sacrificial mask pattern and the mask pattern to thereby improve alignment margin. The alignment margin between the mask pattern and the sacrificial mask pattern is increased to an amount of the length of the connection portion of the sacrificial mask pattern. The lines adjacent to the node-separated line include a protrusion portion protruding toward the cut-off portion of the separated line.

Abstract: A semiconductor device includes a substrate having a first area and a second area, a first transistor in the first area, a second transistor in the second area, an isolation layer between the first area and the second area, and at least one buried shield structure on the isolation layer.

Abstract: A semiconductor device, including a substrate having first and second active regions, the first and second active regions being disposed on opposite sides of an isolation structure, and a bit line electrically coupled to a contact plug that is on the isolation structure between the first active region and the second active region, and electrically coupled to an active bridge pattern directly contacting at least one of the first and second active regions, wherein the contact plug is electrically coupled to the first active region and the second active region, and a bottom surface of the active bridge pattern is below a top surface of the first and second active regions.

Abstract: A semiconductor device includes a driving active region defined in a substrate and at least three driving transistors disposed at the driving active region. The driving transistors share one common source/drain, and each of the driving transistors includes individual source/drains being independent from each other. The common source/drain and the individual source/drains are disposed in the driving active region.