Abstract: A method of manufacturing Er-doped silicon nano-dot arrays and a laser ablation apparatus are provided. In the method, a target having a silicon region and an erbium region is prepared. A silicon substrate is introduced opposite to the target. Laser light is irradiated onto the target, a plume containing silicon ablated from the silicon region and erbium ablated from the erbium region is generated, and an Er-doped silicon film is deposited on the silicon substrate from the plume. The Er-doped silicon film is patterned.

Abstract: A method of manufacturing Er-doped silicon nano-dot arrays and a laser ablation apparatus are provided. In the method, a target having a silicon region and an erbium region is prepared. A silicon substrate is introduced opposite to the target. Laser light is irradiated onto the target, a plume containing silicon ablated from the silicon region and erbium ablated from the erbium region is generated, and an Er-doped silicon film is deposited on the silicon substrate from the plume The Er-doped silicon film is patterned.

Abstract: An apparatus for fabricating silicon thin films for use in laser ablation includes a silicon substrate rotatably mounted in a process chamber maintaining a ultra high vacuum, pulsed light source means mounted outside the process chamber for emitting a pulsed light beam, target rotating means mounted in the process chamber for rotating a plurality of targets mounted therein, the targets being made of a different material, light beam splitting means for splitting the pulsed light beam into double light beams of the same intensity, light beam intensity regulating means for regulating the intensity of the double light beams, wherein the targets are mounted to face the silicon substrate so as to uniformly overlap the vaporization products of the targets generated by irradiating the double light bears on the silicon substrate.

Abstract: An apparatus for fabricating silicon thin films for use in laser ablation includes a silicon substrate rotatably mounted in a process chamber maintaining a ultra high vacuum, pulsed light source means mounted outside the process chamber for emitting a pulsed light beam, target rotating means mounted in the process chamber for rotating a plurality of targets mounted therein, the targets being made of a different material, light beam splitting means for splitting the pulsed light beam into double light beams of the same intensity, light beam intensity regulating means for regulating the intensity of the double light beams, wherein the targets are mounted to face the silicon substrate so as, to uniformly overlap the vaporization products of the targets generated by irradiating the double light beams on the silicon substrate.

Abstract: This invention relates to a method for manufacturing silicon nitride films on a silicon substrate through chemical reaction of a surface, and then manufacturing a silicon nanometer structure using the silicon nitride films under ultra high vacuum condition. A method for manufacturing silicon nano structures using silicon nitride film, includes the following steps: performing a cleaning process of the silicon surface and implanting nitrogen ions having low energy into the silicon substrate; performing first heat treatment of the silicon substrate having ions implanted therin, and cooling the silicon substrate to room temperature to form monolayer thick silicon nitride islands; implanting oxygen gas on the silicon surface on which silicon nitride islands are used as masks while maintaining the surface of the silicon substrate at a temperature of 750 to 800.degree. C.

Abstract: This invention relates to a fabrication method of field emission device by using a carbon nano-tubes and, more particularly, to a fabrication method of field emission device by using the carbon nano-tubes, gathering much attention as a new material, as a field emission tips which have thin and stiff edges so that a threshold voltage required for emitting electron of the field emission device is to be lowered drastically. This invention provides a fabrication method of the field emission device using a thermally and chemically stable carbon nano-tubes, which have very stiff and nano-meter-thick edges, as a field emission tips so that the field emission device using the carbon nano-tubes as the tips, which have an excellent electron beam coherency, can emit electrons at a very low voltage and very stable during a long period.

Abstract: The present invention provides a metal semiconductor optical device which is capable of thinly uniformly growing a metal film on a semiconductor substrate using a layer functioning as an interface active agent and decreasing the density of interface energy state occurring between the metal thin film and the semiconductor, to thereby enhance the optical absorption efficiency of light beam. The interface single atomic layer is formed by one of the group V elements, e.g., one of antimony(Sb) or arsenic(As). Additionally, the metal thin film has a thickness of approximately 30 .ANG..

Abstract: A new conceptional transistor and a method for manufacturing, which increases the integration of semiconductor devices using conventional MOS devices are provided. The present invention provides a transistor in which a structure of metal-insulator film-metal dot-metal (MIMIM), metal-insulator film-metal dot-semiconductor (MIMS), or semiconductor-metal dot-semiconductor (SMS) is formed, using junction of electrodes operating as a source and a drain having a metal dot of nm therebetween, and the current flow between source and drain is controlled by controlling tunneling and Schottky barrier formed between the source and the metal dot using the method of controlling electrical potential of metal dot through charging effect of gate electrode isolated by a thick insulator.

Abstract: The present invention provides a method for making semiconductor nanometer-scale wire. The method comprises the steps of: forming a nitride film on a semiconductor substrate by implanting a nitrogen ions at a high temperature; forming a nitride film pattern with several nanometer line width and spaced by several nanometer therebetween by using an Atomic Force Microscope; forming a silicon oxide film by selectively thermal-oxidizing an exposed portion of the semiconductor substrate; removing the nitride film pattern by using the Atomic Force Microscope; forming a semiconductor layer by using Molecular Beam Epitaxy method on the surface of the silicon oxide film and on the surface of the semiconductor substrate exposed by removing the nitride film pattern; and selectively removing the silicon oxide film and the semiconductor layer on the surface of the silicon oxide film through thermal treatment.

Abstract: The present invention provides a method for forming a diamond selectively on the topmost part of a pointed tip by applying negative bias to the tip in a chemical vapor deposition system. High temperature tungsten filament is placed above the sharp tip, which is biased negatively to induce selective nucleation and growth of diamond on the topmost part of it.

Abstract: A method for the manufacture of a single electron transistor (SET) in a vacuum state, wherein the SET operates in room temperature, comprises the steps of: approaching an Au tip of a scanning tunneling microscopy (STM) on top of a silicon-substrate having a silicon oxide layer on top thereof to maintain a distance from top of the oxide layer to end of the Au tip of the STM; forming an Au cluster on top of the oxide layer by using a low field evaporation method employing the STM, thereby forming a two dimensional island structure on top of the oxide layer, wherein the low field evaporation method employing the STM generates an electronic pulse between top of the oxide layer and end of the Au tip of the STM by applying a voltage to the Au tip of the STM; forming a source and a drain to both sides of the Au cluster in the two dimensional island structure, respectively, in such a way that the Au cluster in the two dimensional island structure maintains a gap with the source and the drain, thereby forming an elect

Abstract: A surface adsorption apparatus for dissociating H.sub.2 molecules into atomic hydrogen in a vacuum vessel and adsorbing the atomic hydrogen on a sample surface is disclosed. A vacuum tube is mounted in the vacuum vessel. A nozzle is connected to the vacuum tube having a plurality of bent portions. A heating member receives electrical power from a power supply source and heats the nozzle to a predetermined temperature. A heat shielding member is located in a path of the atomic hydrogen between one end of the nozzle and the sample surface for shielding the sample surface from heat radiating from the nozzle. The H.sub.2 molecules collide with inner wall surfaces of the bent portions to be readily dissociate into the atomic hydrogen. The atomic dissociated hydrogen propagates toward the sample surface and is adsorbed on the sample surface. Since the nozzle comprises bent portions, H.sub.2 molecules frequently collide with inner wall surfaces of the nozzle to readily dissociate into atomic hydrogen. The H.sub.