Abstract: A microelectronic device includes a stack structure having tiers each including conductive material vertically neighboring insulative material and conductive contact structures. The stack structure is divided into blocks horizontally extending in parallel in a first direction and separated from one another in a second direction orthogonal to the first direction by insulative slot structures. At least one of the blocks includes a lower stadium structure having steps including edges of some of the tiers, and an upper stadium structure vertically overlying the lower stadium structure and having additional steps including edges of some other of the tiers vertically overlying the some of the tiers. The additional steps have greater tread widths in the first direction than the steps. Conductive contact structures are in contact with the additional steps of the upper stadium structure of the at least one of the blocks. Memory devices and electronic systems are also described.

Abstract: A novel pre-quench zone is provided between the soak section and the water quench section of a continuous annealing line. The pre-quench section has multiple passes, and each pass has gas jet cooling tubes and heaters disposed along the path of movement of the strip. By selective operation of the gas jet cooling tubes or the heaters or both, the pre-quench zone provides a wide range of cooling capabilities and cooling rates so as to achieve a quench temperature ranging from 455.degree. C. to 955.degree. C. (850.degree.-1750.degree. F.) using either light or heavy gauge strip and without changing the normal line speed.

Abstract: A cold rolled steel strip is provided with a relatively high yield strength together with good resistance spot weldability, while avoiding rolling problems during its manufacture. This is accomplished by adding, to plain carbon steel, phosphorus in an amount greater than 0.04 wt. % up to 0.15 wt. % and 0.04-0.14 wt. % titanium.