Patents by Inventor Indrajlt Manna

Indrajlt Manna has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Triggered back-to-back diodes for ESD protection in triple-well CMOS process
    Patent number: 7064358
    Abstract: An embodiment is a Electro Static Discharge (ESD) protection device comprising: a n-doped region and a p-doped region in a p-well in a semiconductor structure. The n-doped region and the p-doped region are spaced. A n-well and a deep n-well surrounding the p-well on the sides and bottom. A first I/O pad connected to the n-doped region. A trigger circuit connected the first I/O pad and the p-doped region. A second I/O pad connected to the n-well. A parasitic bipolar transistor is comprised of the n-doped region that functions as a collector terminal, the P-well that functions as a base terminal, and the deep N-well that functions as the emitter terminal. Whereby under an ESD condition, the p-well is charged positive using the trigger circuit and the parasitic bipolar transistor can be turned on.
    Type: Grant
    Filed: December 22, 2003
    Date of Patent: June 20, 2006
    Assignee: Chartered SemiConductor Manufacturing, LTD
    Inventors: Indrajlt Manna, Keng Foo Lo, Pee Ya Tan, Raymond Filippi
  • Triggererd back-to-back diodes for ESD protection in triple-well CMOS process
    Publication number: 20050133870
    Abstract: An embodiment is a Electro Static Discharge (ESD) protection device comprising: a n-doped region and a p-doped region in a p-well in a semiconductor structure. The n-doped region and the p-doped region are spaced. A n-well and a deep n-well surrounding the p-well on the sides and bottom. A first I/O pad connected to the n-doped region. A trigger circuit connected the first I/O pad and the p-doped region. A second I/O pad connected to the n-well. A parasitic bipolar transistor is comprised of the n-doped region that functions as a collector terminal, the P-well that functions as a base terminal, and the deep N-well that functions as the emitter terminal. Whereby under an ESD condition, the p-well is charged positive using the trigger circuit and the parasitic bipolar transistor can be turned on.
    Type: Application
    Filed: December 22, 2003
    Publication date: June 23, 2005
    Inventors: Indrajlt Manna, Keng Lo, Pee Tan, Raymond Filippi