Abstract: A memory controlling device and method are disclosed for controlling a memory having a partial array self refresh (PASR) function and a plurality of memory segments. The memory controlling device comprises an address mapper, an address decoder, an address selector, and a PASR configuration register storing a PASR configuration. The address mapper converts an input address set into a mapped address set according to an address offset. The mapped address set comprises a plurality of consecutive mapped addresses or at least one mapped address within a limited range. The address decoder updates the PASR configuration during writing. The address selector generates an updated address set, which is used for setting at least one mode register of the memory, according to the PASR configuration register under a sleep-or-standby mode in order that the memory can self refresh at least one of the memory segments correspondingly.

Abstract: A wafer stack includes: a first wafer having a first substrate and a first device layer having therein at least a chip; a second wafer having a second substrate disposed above the first wafer; and at least a first metal post existing in the first device layer, and arranged between the first and the second substrates, without being electrically connected to the chip.

Abstract: A dendritic polymer and a magnetic resonance imaging contrast agent employing the same. The magnetic resonance contrast agent includes the dendritic polymer according to the structure of S?P-D?Z-L)i)j or S?P-D?X—Z-L)i)j, wherein, S is cyclosilane moiety with j silicon oxygen residual groups, and j is not less than 2; P is ?CH2CH2O?l, and l is not less than 1; D is a C3-30 dendritic moiety having n oxygen residue, and n is not less than 3; X is C3-30 moiety having bi-functional groups; Z is a C3-20 moiety having a plurality of functional group; and L is a metal cation.