Patents by Inventor Ing-Yann Albert Wang
Ing-Yann Albert Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8048329Abstract: A method for minimizing microwave leakage into processing chamber of a microwave plasma system is provided. The method includes securing plasma traps to a plasma tube assembly, which is a cylindrical structure positioned upstream from the processing chamber and has a plasma-sustaining region. The plasma traps are electrically conductive disks surrounding the cylindrical structure and are positioned upstream from the processing chamber. The plasma traps include at least two electrically conductive disks. Each electrically conductive disk includes corrugated outer surfaces with plurality of corrugated peaks. The corrugated outer surface of the first electrically conductive disk is facing a corrugated outer surface of the second electrically conductive disk in a space-apart relationship to form an interstitial region between the electrically conductive disks.Type: GrantFiled: July 16, 2009Date of Patent: November 1, 2011Assignee: Lam Research CorporationInventors: Mohammad Kamarehi, Ing-Yann Albert Wang
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Publication number: 20110023779Abstract: A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the chamber outside a periphery of the substrate support. The number of telescopic members are also disposed in a concentric manner with regard to a center of the top surface of the substrate support. Each of the number of telescopic members is defined to be independently moved in a substantially vertical direction so as to enable adjustment of an open volume above the top surface of the substrate support, and thereby enable adjustment of a plasma condition within the open volume above the top surface of the substrate support.Type: ApplicationFiled: October 5, 2010Publication date: February 3, 2011Applicant: Lam Research CorporationInventors: Ing-Yann Albert Wang, Robert Chebi
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Patent number: 7824519Abstract: A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the chamber outside a periphery of the substrate support. The number of telescopic members are also disposed in a concentric manner with regard to a center of the top surface of the substrate support. Each of the number of telescopic members is defined to be independently moved in a substantially vertical direction so as to enable adjustment of an open volume above the top surface of the substrate support, and thereby enable adjustment of a plasma condition within the open volume above the top surface of the substrate support.Type: GrantFiled: May 18, 2007Date of Patent: November 2, 2010Assignee: Lam Research CorporationInventors: Ing-Yann Albert Wang, Robert Chebi
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Patent number: 7679024Abstract: A gas distribution arrangement configured to provide a process gas downstream to a plasma tube of a plasma processing chamber. The plasma tube has a top end. The arrangement includes a body having a first end. The first end has a width larger than the plasma tube and a protrusion end adapted to be inserted into the top end. The arrangement also includes a gas inlet vertically disposed in the body. The gas inlet extends from the first end toward the protrusion end and the gas inlet terminates before extending through the protrusion end. The arrangement further includes a plurality of directional inlet channels extending from a lower end of the gas inlet through the protrusion end.Type: GrantFiled: December 23, 2005Date of Patent: March 16, 2010Assignee: Lam Research CorporationInventors: Ing-Yann Albert Wang, Mohammad Kamarehi
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Publication number: 20090278054Abstract: A method for minimizing microwave leakage into processing chamber of a microwave plasma system is provided. The method includes securing plasma traps to a plasma tube assembly, which is a cylindrical structure positioned upstream from the processing chamber and has a plasma-sustaining region. The plasma traps are electrically conductive disks surrounding the cylindrical structure and are positioned upstream from the processing chamber. The plasma traps include at least two electrically conductive disks. Each electrically conductive disk includes corrugated outer surfaces with plurality of corrugated peaks. The corrugated outer surface of the first electrically conductive disk is facing a corrugated outer surface of the second electrically conductive disk in a space-apart relationship to form an interstitial region between the electrically conductive disks.Type: ApplicationFiled: July 16, 2009Publication date: November 12, 2009Inventors: Mohammad Kamarehi, Ing-Yann Albert Wang
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Patent number: 7562638Abstract: An arrangement configured to contain plasma within plasma tube assembly of downstream microwave plasma system. Downstream microwave plasma system is configured to generate plasma within plasma-sustaining region of plasma tube assembly and channeling at least portion of plasma downstream to plasma processing chamber of downstream microwave plasma system. Arrangement includes a first hollow center electrically conductive disk surrounding a cylindrical structure that defines plasma passage of plasma tube assembly. Arrangement also includes a second hollow center electrically conductive disk also surrounding the cylindrical structure. Second hollow center electrically conductive disk is configured to be disposed in a spaced-apart relationship relative to first hollow center electrically conductive disk so as to form a first hollow center disk-shape interstitial region between first hollow center electrically conductive disc and second hollow center electrically conductive disc.Type: GrantFiled: December 23, 2005Date of Patent: July 21, 2009Assignee: Lam Research CorporationInventors: Mohammad Kamarehi, Ing-Yann Albert Wang
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Patent number: 7554053Abstract: A plasma system is disclosed. The plasma system includes a microwave waveguide assembly having a longitudinal axis parallel with a first axis. The plasma system also includes a plasma tube assembly intersecting the microwave waveguide assembly. The plasma tube assembly has a longitudinal axis parallel with a second axis that is substantially orthogonal with the first axis. The plasma tube assembly also has a plasma-sustaining region defined by an upstream plurality of plasma traps and a downstream plurality of plasma traps.Type: GrantFiled: December 23, 2005Date of Patent: June 30, 2009Assignee: Lam Research CorporationInventors: Mohammad Kamarehi, Ing-Yann Albert Wang
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Patent number: 7476291Abstract: A vacuum chamber for passivation and/or stripping a photoresist layer formed on a semiconductor substrate. The chamber includes an internal chamber body that forms a cavity to surround the substrate and has a plurality of gas passages extending therethrough to the cavity and one or more heaters to heat the internal chamber body. The internal chamber body is slidably mounted on an external chamber body that surrounds a side of the internal chamber with a gap therebetween. The device also includes: an exhaust unit operative to pump the gas from the cavity; a chamber top mounted on the internal chamber body to cover a top surface of the internal chamber body with a gap therebetween and having an opening in fluid communication with the gas passages; and a plasma source operative to energize the gas into a plasma state and coupled to the opening for fluid communication with the cavity.Type: GrantFiled: September 28, 2006Date of Patent: January 13, 2009Assignee: Lam Research CorporationInventors: Ing-Yann Albert Wang, Robert Chebi
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Publication number: 20080286489Abstract: A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the chamber outside a periphery of the substrate support. The number of telescopic members are also disposed in a concentric manner with regard to a center of the top surface of the substrate support. Each of the number of telescopic members is defined to be independently moved in a substantially vertical direction so as to enable adjustment of an open volume above the top surface of the substrate support, and thereby enable adjustment of a plasma condition within the open volume above the top surface of the substrate support.Type: ApplicationFiled: May 18, 2007Publication date: November 20, 2008Applicant: Lam Research CorporationInventors: Ing-Yann Albert Wang, Robert Chebi
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Publication number: 20080078744Abstract: A vacuum chamber for passivation and/or stripping a photoresist layer formed on a semiconductor substrate. The chamber includes an internal chamber body that forms a cavity to surround the substrate and has a plurality of gas passages extending therethrough to the cavity and one or more heaters to heat the internal chamber body. The internal chamber body is slidably mounted on an external chamber body that surrounds a side of the internal chamber with a gap therebetween. The device also includes: an exhaust unit operative to pump the gas from the cavity; a chamber top mounted on the internal chamber body to cover a top surface of the internal chamber body with a gap therebetween and having an opening in fluid communication with the gas passages; and a plasma source operative to energize the gas into a plasma state and coupled to the opening for fluid communication with the cavity.Type: ApplicationFiled: September 28, 2006Publication date: April 3, 2008Applicant: Lam Research CorporationInventors: Ing-Yann Albert Wang, Robert Chebi