Patents by Inventor In-Joon Yeo
In-Joon Yeo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160359087Abstract: Provided is a semiconductor light emitting device including: a light emitting stack including a first semiconductor layer, an active layer and a second semiconductor layer; a first electrode structure penetrating through the second semiconductor layer and the active layer to be connected to the first semiconductor layer, the first electrode structure having at least one contact region; and a second electrode structure connected to the second semiconductor layer, wherein the first semiconductor layer includes a protrusion portion provided on the at least one contact region and a recess portion provided in a circumferential portion of the protrusion portion.Type: ApplicationFiled: May 18, 2016Publication date: December 8, 2016Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Gong Shin LEE, In Joon YEO, Sung Won KO, Shi Young LEE, Byung Chul CHOI
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Patent number: 9412837Abstract: In a method of manufacturing a semiconductor device, the method comprises: forming a dummy gate pattern on a substrate; and forming first spacers at side surfaces of the dummy gate pattern to expose upper portions of the side surfaces of the dummy gate pattern. Sacrificial film patterns are formed on regions of the upper portions of the side surfaces of the dummy gate pattern which are exposed by the first spacers. Second spacers are formed on the first spacers and the sacrificial film patterns. An interlayer insulating film is formed to cover the substrate, the second spacers and the dummy gate pattern. A top surface of the dummy gate pattern is exposed by planarizing the interlayer insulating film, and a trench is formed by removing the dummy gate pattern and the sacrificial film patterns.Type: GrantFiled: February 8, 2012Date of Patent: August 9, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventor: In-Joon Yeo
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Publication number: 20130302930Abstract: A method of manufacturing a gallium nitride (GaN)-based semiconductor light emitting device is provided. A light emitting structure is formed and includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer formed of a nitride semiconductor containing gallium (Ga) on a substrate. A metal layer is disposed on the p-type semiconductor layer, and a heat treatment is performed to form a gallium(Ga)-metal compound. The gallium(Ga)-metal compound formed on the p-type semiconductor layer is removed. An electrode is disposed on an upper surface of the p-type semiconductor layer from which the gallium(Ga)-metal compound has been removed. The forming of the gallium(Ga)-metal compound includes forming a gallium vacancy in a surface of the p-type semiconductor layer.Type: ApplicationFiled: May 3, 2013Publication date: November 14, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: In Joon YEO, Hyun Young KIM, Sang Yeob SONG
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Publication number: 20120264286Abstract: In a method of manufacturing a semiconductor device, the method comprises: forming a dummy gate pattern on a substrate; and forming first spacers at side surfaces of the dummy gate pattern to expose upper portions of the side surfaces of the dummy gate pattern. Sacrificial film patterns are formed on regions of the upper portions of the side surfaces of the dummy gate pattern which are exposed by the first spacers. Second spacers are formed on the first spacers and the sacrificial film patterns. An interlayer insulating film is formed to cover the substrate, the second spacers and the dummy gate pattern. A top surface of the dummy gate pattern is exposed by planarizing the interlayer insulating film, and a trench is formed by removing the dummy gate pattern and the sacrificial film patterns.Type: ApplicationFiled: February 8, 2012Publication date: October 18, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventor: In-Joon Yeo
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Patent number: 7888725Abstract: An electronic device may include a substrate and a plurality of conductive electrodes on the substrate. Each of the conductive electrodes may have a respective electrode wall extending away from the substrate, and an electrode wall of at least one of the conductive electrodes may include a recessed portion. In addition, an insulating layer may be provided on the electrode wall, and portions of the electrode wall may be free of the insulating layer between the substrate and the insulating layer.Type: GrantFiled: October 3, 2008Date of Patent: February 15, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: In-joon Yeo, Tae-hyuk Ahn, Kwang-wook Lee, Jung-woo Seo, Jeong-sic Jeon
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Patent number: 7582559Abstract: A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate. The insulation pattern has at least one opening that exposes a surface of the substrate. Then, a first polysilicon layer is formed over the substrates such that the first polysilicon layer fills the opening. The first polysilicon layer also includes a void therein. An upper portion of the first polysilicon layer is removed such that void expands to a recess and the recess is exposed. A second polysilicon layer is formed over the substrate such that the second polysilicon layer fills the recess.Type: GrantFiled: October 14, 2005Date of Patent: September 1, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: In-Joon Yeo, Won-Jun Lee, Tae-Hyun Kim, Ji-Hong Kim, Byoung-Moon Yoon
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Patent number: 7491601Abstract: An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer, and portions of the electrode most distant from the substrate may be free of the insulating spacer. Related methods and structures are also discussed.Type: GrantFiled: December 14, 2007Date of Patent: February 17, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: In-joon Yeo, Tae-hyuk Ahn, Kwang-wook Lee, Jung-woo Seo, Jeong-sic Jeon
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Publication number: 20090032905Abstract: An electronic device may include a substrate and a plurality of conductive electrodes on the substrate. Each of the conductive electrodes may have a respective electrode wall extending away from the substrate, and an electrode wall of at least one of the conductive electrodes may include a recessed portion. In addition, an insulating layer may be provided on the electrode wall, and portions of the electrode wall may be free of the insulating layer between the substrate and the insulating layer.Type: ApplicationFiled: October 3, 2008Publication date: February 5, 2009Inventors: In-joon Yeo, Tae-hyuk Ahn, Kwang-wook Lee, Jung-woo Seo, Jeong-sic Jeon
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Patent number: 7396416Abstract: A substrate cleaning device comprises a chamber for cleaning a substrate; a substrate support installed in the chamber providing a surface for supporting the substrate during cleaning thereof; at least one cleaning solution supply outlet for spraying a cleaning solution onto a surface of the substrate; a vibration force generator for supplying a vibratory action; a vibration force generating shaft which receives said vibratory action from the vibration force generator so that said vibration force generating shaft vibrates for agitating the cleaning solution on the substrate; and a vibration force distributor for preventing a vibration force from being concentrated on a portion of the substrate below the vibration force generating shaft.Type: GrantFiled: October 21, 2004Date of Patent: July 8, 2008Assignee: Samsung Electronics Co., Ltd.Inventor: In-Joon Yeo
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Patent number: 7380560Abstract: Wafer cleaning apparatus include a cleaning tub configured to receive a wafer to be cleaned. A wafer cleaning unit coupled to the cleaning tub is configured to provide wafer cleaning solution to the wafer. A probe is positioned in the cleaning tub proximate the wafer. The probe is configured to provide megasonic vibrational energy to a surface of the wafer and/or the wafer cleaning solution to separate contaminants from the surface of the wafer. A probe cleaning unit is configured to provide a probe cleaning solution to the probe to clean the probe. Methods of using the wafer cleaning apparatus are also provided.Type: GrantFiled: May 11, 2004Date of Patent: June 3, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: In-joon Yeo, Il-sang Lee, Kang-youn Lee
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Publication number: 20080096347Abstract: An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer, and portions of the electrode most distant from the substrate may be free of the insulating spacer. Related methods and structures are also discussed.Type: ApplicationFiled: December 14, 2007Publication date: April 24, 2008Inventors: In-joon Yeo, Tae-hyuk Ahn, Kwang-wook Lee, Jung-woo Seo, Jeong-sic Jeon
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Patent number: 7314795Abstract: An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer. Related methods and structures are also discussed.Type: GrantFiled: April 4, 2006Date of Patent: January 1, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: In-joon Yeo, Tae-hyuk Ahn, Kwang-wook Lee, Jung-woo Seo, Jeong-sic Jeon
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Publication number: 20060180843Abstract: An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer. Related methods and structures are also discussed.Type: ApplicationFiled: April 4, 2006Publication date: August 17, 2006Inventors: In-joon Yeo, Tae-hyuk Ahn, Kwang-wook Lee, Jung-woo Seo, Jeong-sic Jeon
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Patent number: 7053435Abstract: An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer. Related methods and structures are also discussed.Type: GrantFiled: March 10, 2004Date of Patent: May 30, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: In-joon Yeo, Tae-hyuk Ahn, Kwang-wook Lee, Jung-woo Seo, Jeong-sic Jeon
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Publication number: 20060088987Abstract: A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate. The insulation pattern has at least one opening that exposes a surface of the substrate. Then, a first polysilicon layer is formed over the substrates such that the first polysilicon layer fills the opening. The first polysilicon layer also includes a void therein. An upper portion of the first polysilicon layer is removed such that void expands to a recess and the recess is exposed. A second polysilicon layer is formed over the substrate such that the second polysilicon layer fills the recess.Type: ApplicationFiled: October 14, 2005Publication date: April 27, 2006Inventors: In-Joon Yeo, Won-Jun Lee, Tae-Hyun Kim, Ji-Hong Kim, Byoung-Moon Yoon
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Patent number: 6946431Abstract: Cleaning solutions for integrated circuit devices and methods of cleaning integrated circuit devices using the same are disclosed. The cleaning solution includes about 30% aqueous ammonia solution, acetic acid by a volume percent higher then a volume percent of the aqueous ammonia solution, and deionized water by a volume percent higher then the volume percent of the acetic acid. Additionally, disclosed are methods wherein the cleaning solution is formed on integrated circuit substrates having an exposed metal pattern formed thereon, and further providing mega-sonic energy to the film of the cleaning solution.Type: GrantFiled: September 4, 2003Date of Patent: September 20, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: In-Joon Yeo, Yong-Sun Ko, In-Seak Hwang, Byoung-Moon Yoon, Dae-Hyuk Chung, Kyung-Hyun Kim
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Publication number: 20050104110Abstract: An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer. Related methods and structures are also discussed.Type: ApplicationFiled: March 10, 2004Publication date: May 19, 2005Inventors: In-joon Yeo, Tae-hyuk Ahn, Kwang-wook Lee, Jung-woo Seo, Jeong-sic Jeon
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Publication number: 20050087210Abstract: A substrate cleaning device comprises a chamber for cleaning a substrate; a substrate support installed in the chamber providing a surface for supporting the substrate during cleaning thereof; at least one cleaning solution supply outlet for spraying a cleaning solution onto a surface of the substrate; a vibration force generator for supplying a vibratory action; a vibration force generating shaft which receives said vibratory action from the vibration force generator so that said vibration force generating shaft vibrates for agitating the cleaning solution on the substrate; and a vibration force distributor for preventing a vibration force from being concentrated on a portion of the substrate below the vibration force generating shaft.Type: ApplicationFiled: October 21, 2004Publication date: April 28, 2005Inventor: In-Joon Yeo
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Publication number: 20040238000Abstract: Wafer cleaning apparatus include a cleaning tub configured to receive a wafer to be cleaned. A wafer cleaning unit coupled to the cleaning tub is configured to provide wafer cleaning solution to the wafer. A probe is positioned in the cleaning tub proximate the wafer. The probe is configured to provide megasonic vibrational energy to a surface of the wafer and/or the wafer cleaning solution to separate contaminants from the surface of the wafer. A probe cleaning unit is configured to provide a probe cleaning solution to the probe to clean the probe. Methods of using the wafer cleaning apparatus are also provided.Type: ApplicationFiled: May 11, 2004Publication date: December 2, 2004Inventors: In-joon Yeo, Il-sang Lee, Kang-youn Lee
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Publication number: 20040163668Abstract: To clean contaminants on a substrate including a metal wiring formed thereon, a cleaning solution including diluted aqueous sulfuric acid solution is applied onto the substrate. Mega-sonic energy is applied to the cleaning solution on the substrate. The contaminants are removed from the substrate in accordance with the reaction between the diluted aqueous sulfuric acid solution and the contaminant while the mega-sonic energy is applied to the substrate. The corrosion of the metal wiring is prevented because of the cleaning solution including the diluted aqueous sulfuric acid solution. Additionally, the damage of the substrate is reduced because the mega-sonic energy is appropriately applied to the substrate.Type: ApplicationFiled: February 17, 2004Publication date: August 26, 2004Applicant: Samsung Electronics Co., Ltd.Inventors: Dae-Hyuk Chung, Kwang-Wook Lee, In-Joon Yeo