Abstract: An optical amplifying apparatus is basically arranged by employing an amplifying optical fiber, a pumping light source, and a wavelength division multiplexer for entering thereinto pumping light.

Abstract: An optical transmitter having an automatic output controlling function converts monitor current of a laser into a voltage and detects an average value of the voltage. The average value is compared with a mark-space ratio outputted from a mark-space ratio detection circuit by a bias control circuit, by which a bias circuit is controlled. Meanwhile, the average value described above is divided by the mark-space ratio from the mark-space ratio detection circuit by an operation circuit, and a resulting value is compared with a reference voltage (Vref) and amplified by a pulse current controller. The pulse current driver is controlled with the amplified output of the pulse current controller. Finally, outputs of the pulse current driver and the bias circuit are added to drive the laser.

Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this stucture, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.

Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.

Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of :he substrates on which electrode arrangement and active devices are formed.

Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.

Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.

Abstract: An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for provessing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result even if transparent electrode is provided on the semiconductor layer.

Abstract: An improved method of manufacturing liquid crystal devices is described. The liquid crystal device consists of a pair of substrates, a liquid crystal layer disposed between the substrates, an electrode arrangement including driving devices for applying an electric field to the liquid crystal layer. The driving device is formed of a semiconductor film having a pin junction. The method includes the step of repairing short current paths present in the semiconductor film by applying a reverse voltage to the driving device.

Abstract: A liquid crystal device can be driven by application of a unipolar electric field to a ferroelectric liquid crystal layer. Without application of an electric field, isotropic characteristics are observed because of a spiral arrangement of the liquid crystal molecules. Under the application of an electric field, a birefringence is observed because of liquid crystal molecules being aligned in one direction. The device can be driven by applying an electric field in one direction and removing the electric field.

Abstract: An improved liquid crystal device which is driven by applying electric field thereon is shown. The liquid crystal is contained in the device as a layer which is separated into pixel and the optical condition of which is changed by the electric field applied. Contiguous to the liquid crystal layer, a ferroelectric film is provided to impart hysteresis to the device.

Abstract: An improved semiconductor processing is desclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

Abstract: An improved liquid crystal device is shown. The device comprises a pair of substrates, a liquid crystal layer disposed inbetween and a pair of electrodes formed on the opposed insides of the substrate for applying an electric field on the liquid crystal layer. Further a dielectric film is formed on a inside of the substrate of the device. In response to an electric field applied to the liquid crystal layer, an electric charge is accumulated on the dielectric film to enable the device to exhibit apparent coersive electric field.

Abstract: An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.

Abstract: A liquid crystal device can be driven by application of unipolar electric field to a ferroelectric liquid crystal layer. Without application of electric field, isotropic characteristics is observed because of a spiral arrangement of liquid crystal molecules. Under application of electric field, a birefringence is observed because of liquid crystal molecules aligned in one direction. The device can be driven by applying an electric field in one direction and removing the electric field, by using a rectifier in series with each pixel.

Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.

Abstract: An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced during the fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result when electrodes are provided on the semiconductor layer.

Abstract: Photoelectric conversion devices are manufactured at high yield by repairing the devices during the final steps of the manufacuturing process. Short current paths resulting from the formation process of semiconductor layers can be eliminated by applying a reverse voltage to the layers, which thus are heated and made insulating. After the elimination of the short current paths, the reverse current no longer passes beyond 15 mA on a reverse voltage of 8 V.

Abstract: An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processsing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.