Abstract: A seed layer for inducing nucleation to form a layer of material is described. In an embodiment, the seed layer comprising a layer of two-dimensional monolayer amorphous material having a disordered atomic structure adapted to create localised electronic states to form electric potential wells for bonding adatoms to a surface of the seed layer via van der Waals interaction to form the layer of material, wherein each of the electric potential wells has a potential energy larger in magnitude than surrounding thermal energy to capture adatoms on the surface of the seed layer. Embodiments in relation to a method for forming the seed layer, a heterostructure comprising the seed layer, a method for forming the heterostructure comprising the seed layer, a device comprising the heterostructure and a method of enhancing vdW interaction between adatoms and a surface of the seed layer are also described.

Abstract: Various embodiments may relate to an electrode. The electrode may include an electrode core including an electrode active material. The electrode may also include one or more monolayer amorphous films. Each of the one or more monolayer amorphous films may be a continuous layer surrounding the electrode core.

Abstract: Various embodiments relate to an electronic device including a substrate comprising a semiconductor or polymeric inhibit and a barrier comprising one or more monolayer amorphous films over the substrate, wherein the barrier is configured to or reduce permeation of moisture or gas from environment to the substrate. Various embodiments relate to an electronic device comprising a first device structure including an electrically conductive material, a second device structure including a further electrically conductive material or a semiconductor material, and a barrier including one or more monolayer amorphous films between the first device structure and the second device structure, wherein the barrier is configured to inhibit or reduce interdiffusion between the first device structure and the second device structure.

Abstract: A recording device comprising an overcoat layer, wherein the overcoat layer comprises an amorphous carbon overcoat layer having a crystallinity (C)?0.8.

Abstract: A recording device comprising an overcoat layer, wherein the overcoat layer comprises an amorphous carbon overcoat layer having a crystallinity (C)?0.8.