Abstract: A process prepares an oxygen carrier for a chemical looping process including providing a material A having a first transition metal and/or an oxide of the first transition metal. The first transition metal is selected from chemical element groups 6-11 of the Periodic System. Material A is subjected to a reaction with H2 to reduce the first transition metal and/or oxide to form a reduced material B. Material B is treated with a salt solution of a second transition metal selected to have a standard reduction potential larger than the first transition metal. A portion of the first transition metal in the reduced material B is replaced by the second transition metal. A molar ratio of the first transition metal with respect to the second transition metal in material B ranges between 2:1 and 100:1. An oxygen carrier is obtained with the method and is regenerated using steam.

Abstract: The present invention is in the field of processes for the production of nanoparticles. It relates to a process for the preparation of nanoparticles comprising heating a water-free solution containing (a) a metal-organic compound containing an alkaline earth metal and a group 4 metal, and (b) a stabilizer to at least 150° C. for at least 30 minutes.

Abstract: The present invention is in the field of nanoparticles, their preparation and their use as pinning centers in superconductors. In particular the present invention relates to nanoparticles comprising an oxide of Sr, Ba, Y, La, Ti, Zr, Hf, Nb, or Ta, wherein the nanoparticles have a weight average diameter of 1 to 30 nm and wherein an organic compound of general formula (I), (II) or (III) or an organic compound containing at least two carboxylic acid groups on the surface of the nanoparticles (I) (II) (III) wherein a is 0 to 5, b and c are independent of each other 1 to 14, n is 1 to 5, f is 0 to 5, p and q are independent of each other 1 to 14, and e and f are independent of each other 0 to 12.

Abstract: The present invention is in the field of processes for the production of tantalum oxide particles. In particular the present invention relates to a process for producing crystalline tantalum oxide nanoparticles comprising heating a water-free solution containing (a) a tantalum alkoxide, (b) an acid, and (c) a solvent.

Abstract: The invention relates to a method of manufacturing a coated polymer substrate having low emissivity properties and a high hardness. The method comprises the steps of providing a polymer substrate; applying at least one adhesion promoting layer on one side of said polymer substrate; applying at least one silica or silica-based layer on said at least one adhesion promoting layer by a sol-gel process. The invention further relates to a coated polymer substrate having low emissivity properties, to a glass substrate provided with a coated polymer substrate and to the use of such a coated substrate as substrate having low emissivity properties.

Abstract: The present invention is in the field of processes for the production of tantalum oxide particles. In particular the present invention relates to a process for producing crystalline tantalum oxide nanoparticles comprising heating a water-free solution containing (a) a tantalum alkoxide, (b) an acid, and (c) a solvent.

Abstract: The present invention is in the field of nanoparticles, their preparation and their use as pinning centers in superconductors. In particular the present invention relates to nanoparticles comprising an oxide of Sr, Ba, Y, La, Ti, Zr, Hf, Nb, or Ta, wherein the nanoparticles have a weight average diameter of 1 to 30 nm and wherein an organic compound of general formula (I), (II) or (III) or an organic compound containing at least two carboxylic acid groups on the surface of the nanoparticles (I) (II) (III) wherein a is 0 to 5, b and c are independent of each other 1 to 14, n is 1 to 5, f is 0 to 5, p and q are independent of each other 1 to 14, and e and f are independent of each other 0 to 12.

Abstract: A method for at least partially sealing a porous material is provided, comprising forming a sealing layer onto the porous material by applying a sealing compound comprising oligomers wherein the oligomers are formed by ageing a precursor solution comprising cyclic carbon bridged organosilica and/or bridged organosilanes. The method is especially designed for low k dielectric porous materials to be incorporated into semiconductor devices.

Abstract: The invention relates to a method for the wet chemical production of an HTSL on a carrier, wherein an HTSL precursor solution comprising no trifluoroacetate may be utilized if the same is heated to a temperature Ts during the heat treatment of the HTSL precursor, wherein the remaining substances of the HTSL precursor solution form at least a partial melt, which is below the temperature at which RE2BaCuOx is formed, and which is deposited from the liquid phase while forming a peritectic.

Abstract: The invention relates to a method for the wet chemical production of an HTSL on a carrier, wherein an HTSL precursor solution comprising no trifluoroacetate may be utilized if the same is heated to a temperature Ts during the heat treatment of the HTSL precursor, wherein the remaining substances of the HTSL precursor solution form at least a partial melt, which is below the temperature at which RE2BaCuOx is formed, and which is deposited from the liquid phase while forming a peritectic.

Abstract: A method and an apparatus for spraying materials onto a substrate to produce a coating thereon is described which allows very thick layers of complex metal oxides to be produced. The apparatus and method are particularly suitable for producing superconducting coatings.