Patents by Inventor Isabelita Roflox
Isabelita Roflox has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140273530Abstract: Provided are methods post deposition treatment of films comprising SiN. Certain methods pertain to providing a film comprising SiN; and exposing the film to an inductively coupled plasma, capacitively coupled plasma or a microwave plasma to provide a treated film with a modulated film stress and/or wet etch rate in dilute HF. Certain other methods comprise depositing a PEALD SiN film followed by exposure to a plasma nitridation process or a UV treatment to provide a treated film.Type: ApplicationFiled: March 14, 2014Publication date: September 18, 2014Inventors: Victor Nguyen, Isabelita Roflox, Mihaela Balseanu, Li-Qun Xia, Heng Pan, Wei Liu, Malcolm J. Bevan, Christopher S. Olsen, Johanes F. Swenberg
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Patent number: 8753989Abstract: High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.Type: GrantFiled: February 2, 2012Date of Patent: June 17, 2014Assignee: Applied Materials, Inc.Inventors: Mihaela Balseanu, Michael S. Cox, Li-Qun Xia, Mei-Yee Shek, Jia Lee, Vladimir Zubkov, Tzu-Fang Huang, Rongping Wang, Isabelita Roflox, Hichem M'Saad
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Patent number: 8337950Abstract: Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.Type: GrantFiled: May 24, 2010Date of Patent: December 25, 2012Assignee: Applied Materials, Inc.Inventors: Victor Nguyen, Yi Chen, Mihaela Balseanu, Isabelita Roflox, Li-Qun Xia, Derek R Witty
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Publication number: 20120196452Abstract: High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.Type: ApplicationFiled: February 2, 2012Publication date: August 2, 2012Applicant: Applied Materials, Inc.Inventors: Mihaela Balseanu, Michael S. Cox, Li-Qun Xia, Mei-Yee Shek, Jia Lee, Vladimir Zubkov, Tzu-Fang Huang, Rongping Wang, Isabelita Roflox, Hichem M'Saad
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Publication number: 20120196450Abstract: Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with some embodiments, a deposited silicon nitride film is exposed to curing with plasma and ultraviolet (UV) radiation, thereby helping remove hydrogen from the film and increasing film stress. In accordance with other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.Type: ApplicationFiled: February 2, 2012Publication date: August 2, 2012Applicant: Applied Materials, Inc.Inventors: Mihaela Balseanu, Victor Nguyen, Li-Qun Xia, Derek R. Witty, Hichem M'Saad, Mei-Yee Shek, Isabelita Roflox
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Patent number: 8148269Abstract: A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process.Type: GrantFiled: March 31, 2009Date of Patent: April 3, 2012Assignee: Applied Materials, Inc.Inventors: Mihaela Balseanu, Christopher D. Bencher, Yongmei Chen, Li Yan Miao, Victor Nguyen, Isabelita Roflox, Li-Qun Xia, Derek R. Witty
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Patent number: 8138104Abstract: Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.Type: GrantFiled: June 13, 2007Date of Patent: March 20, 2012Assignee: Applied Materials, Inc.Inventors: Mihaela Balseanu, Victor Nguyen, Li-Qun Xia, Derek R. Witty, Hichem M'Saad, Mei-Yee Shek, Isabelita Roflox
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Patent number: 8129290Abstract: High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.Type: GrantFiled: April 7, 2006Date of Patent: March 6, 2012Assignee: Applied Materials, Inc.Inventors: Mihaela Balseanu, Michael S. Cox, Li-Qun Xia, Mei-Yee Shek, Jia Lee, Vladimir Zubkov, Tzu-Fang Huang, Rongping Wang, Isabelita Roflox, Hichem M'Saad
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Publication number: 20100233633Abstract: Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.Type: ApplicationFiled: May 24, 2010Publication date: September 16, 2010Applicant: Applied Materials, Inc.Inventors: Victor Nguyen, Yi Chen, Mihaela Balseanu, Isabelita Roflox, Li-Qun Xia, Derek R. Witty
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Publication number: 20090263972Abstract: A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process.Type: ApplicationFiled: March 31, 2009Publication date: October 22, 2009Applicant: APPLIED MATERIALS, INC.Inventors: Mihaela Balseanu, Christopher D. Bencher, Yongmei Chen, Li Yan Miao, Victor Nguyen, Isabelita Roflox, Li-Qun Xia, Derek R. Witty
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Publication number: 20080020591Abstract: Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.Type: ApplicationFiled: June 13, 2007Publication date: January 24, 2008Applicant: Applied Materials, Inc.Inventors: Mihaela Balseanu, Victor Nguyen, Li-Qun Xia, Derek Witty, Hichem M'Saad, Mei-Yee Shek, Isabelita Roflox
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Publication number: 20060269693Abstract: High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.Type: ApplicationFiled: April 7, 2006Publication date: November 30, 2006Applicant: Applied Materials, Inc.Inventors: Mihaela Balseanu, Michael Cox, Li-Qun Xia, Mei-Yee Shek, Jia Lee, Vladimir Zubkov, Tzu-Fang Huang, Rongping Wang, Isabelita Roflox, Hichem M'Saad
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Publication number: 20060269692Abstract: Compressive stress in a film of a semiconductor device may be controlled utilizing one or more techniques, employed alone or in combination. A first set of embodiments increase silicon nitride compressive stress by adding hydrogen to the deposition chemistry, and reduce defects in a device fabricated with a high compressive stress silicon nitride film formed in the presence of hydrogen gas. A silicon nitride film may comprise an initiation layer formed in the absence of a hydrogen gas flow, underlying a high stress nitride layer formed in the presence of a hydrogen gas flow. A silicon nitride film formed in accordance with an embodiment of the present invention may exhibit a compressive stress of 2.8 GPa or higher.Type: ApplicationFiled: April 5, 2006Publication date: November 30, 2006Applicant: Applied Materials, Inc. A Delaware corporationInventors: Mihaela Balseanu, Li-Qun Xia, Vladimir Zubkov, Mei-Yee Shek, Isabelita Roflox, Hichem M'Saad