Abstract: The present invention concerns a methods and compositions for preparing a multi layer composite device, such as a semiconductor device. Said method comprises (A) forming a dielectric layer on the surface of a composite material by bringing said surface into contact: a) either with a solution, comprising the diazonium salt of aniline, a diazonium salt bearing at least one functional group or an amine compound of formula H2N-A-X—Z as defined in claim 1: b) or with a first solution containing an aryl diazonium salt and successively a second solution containing a compound bearing at least one functional group and bearing at least one functional group capable of reacting with the aryl radical grafted on the surface of the composite material thanks to the aryl diazonium salt; (B) forming an overlayer on said surface of said composite material obtained in step (A), said overlayer consisting of a Si-containing dielectric Cu-Etch Stop Layer and/or copper diffusion barrier.

Abstract: The present invention concerns a methods and compositions for preparing a multi layer composite device, such as a semiconductor device. Said method comprises (A) forming a dielectric layer on the surface of a composite material by bringing said surface into contact: a) either with a solution, comprising the diazonium salt of aniline, a diazonium salt bearing at least one functional group or an amine compound of formula H2N-A-X-Z as defined in claim 1: b) or with a first solution containing an aryl diazonium salt and successively a second solution containing a compound bearing at least one functional group and bearing at least one functional group capable of reacting with the aryl radical grafted on the surface of the composite material thanks to the aryl diazonium salt; (B) forming an overlayer on said surface of said composite material obtained in step (A), said overlayer consisting of a Si-containing dielectric Cu-Etch Stop Layer and/or copper diffusion barrier.

Abstract: The invention relates to a composite solid material which fixes inorganic contaminants based on metal hexacyanoferrate comprising a solid support coated with a thin film of an anion-exchange polymer to which is fixed an insoluble metal hexacyanoferrate forming a thin layer, characterized in that said polymer is a noncrosslinked polymer which comprises, as anion-exchange groups, solely quaternary ammonium groups and in that it does not comprise primary, secondary or tertiary amine groups.

Abstract: Process for the preparation of a composite solid material which fixes inorganic contaminants, based on metal hexacyanoferrate, comprising a solid support coated with a film of an anion-exchange polymer to which is fixed an insoluble metal hexacyanoferrate forming a thin layer, said process essentially comprising at least one step in which said solid support is brought into contact with at least one liquid reactant and at least one step in which washing is carried out with a washing liquid, characterized in that all of the steps of the process are carried out continuously in one and the same receptacle, such as a column, in which the support forms a fluidized bed, the fluidization of which is provided by said at least one reactant or washing liquid.