Patents by Inventor Isabelle Orain

Isabelle Orain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR STRUCTURES WITH COPLANAR RECESSED GATE LAYERS AND FABRICATION METHODS
    Publication number: 20160049495
    Abstract: Semiconductor structures and fabrication methods are provided which includes, for instance, providing a gate structure over a semiconductor substrate, the gate structure including multiple conformal gate layers and a gate material disposed within the multiple conformal gate layers; recessing a portion of the multiple conformal gate layers below an upper surface of the gate structure, where upper surfaces of recessed, multiple conformal gate layers are coplanar; and removing a portion of the gate material to facilitate an upper surface of a remaining portion of the gate material to be coplanar with an upper surface of the recessed, multiple conformal gate layers.
    Type: Application
    Filed: August 18, 2014
    Publication date: February 18, 2016
    Applicants: LAM RESEARCH CORPORATION, GLOBALFOUNDRIES INC.
    Inventors: Kristina TREVINO, Yuan-Hung LIU, Gabriel Padron WELLS, Xing ZHANG, Hoong Shing WONG, Chang Ho MAENG, Taejoon HAN, Gowri KAMARTHY, Isabelle ORAIN, Ganesh UPADHYAYA
  • Semiconductor structures with coplanar recessed gate layers and fabrication methods
    Patent number: 9252238
    Abstract: Semiconductor structures and fabrication methods are provided which includes, for instance, providing a gate structure over a semiconductor substrate, the gate structure including multiple conformal gate layers and a gate material disposed within the multiple conformal gate layers; recessing a portion of the multiple conformal gate layers below an upper surface of the gate structure, where upper surfaces of recessed, multiple conformal gate layers are coplanar; and removing a portion of the gate material to facilitate an upper surface of a remaining portion of the gate material to be coplanar with an upper surface of the recessed, multiple conformal gate layers.
    Type: Grant
    Filed: August 18, 2014
    Date of Patent: February 2, 2016
    Assignees: LAM RESEARCH CORPORATION, GLOBALFOUNDRIES INC.
    Inventors: Kristina Trevino, Yuan-Hung Liu, Gabriel Padron Wells, Xing Zhang, Hoong Shing Wong, Chang Ho Maeng, Taejoon Han, Gowri Kamarthy, Isabelle Orain, Ganesh Upadhyaya