Abstract: A nonlinear diode which is easy to manufacture and has sharply nonlinear voltage-current characteristic and a matrix display unit in which it is used has a diode structure in which an amorphous semiconductor layer is disposed between a bus bar and a pixel electrode formed on a substrate so as to thereby provide an electrical connection therebetween. The amorphous semiconductor layer is made of a compound of arsenic and at least one of selenium and sulphur; a compound of nitrogen and at least one of boron; silicon; aluminium and gallium, a compound of carbon and silicon; or boron.

Abstract: A dot matrix display panel with a thin film transistor and the manufacturing method therefor, the panel being so constructed that a gate insulating layer and a semiconductor layer are provided as one laminated film substantially equal in the size thereto on an insulating substrate having a gate electrode and in a region of the substrate except for the peripheral portion thereof, and a source electrode and a drain electrode come into contact with the semiconductor layer in a region covering the gate electrode and gate insulating layer so as to constitute a thin film transistor array substrate, so that a display medium is sandwiched between the array substrate and the substrate having a transparent electrode.