Abstract: A reading apparatus for a handicapped person includes a reader for optically reading character information from a recording medium and photoelectrically converting the character information so that it is displayed by a pin pattern on a display. When the operator detects a character area from the display result, an area of an object for character recognition is designated by an input unit and the execution of the character recognition is instructed. A processor recognizes the character read by the reader and displays the character so that it can be perceived in a tactile manner. Whether the result of the reading of the character is correct or not can be checked by tactile perception. The recognition result of the character recognized can also be converted into an audio output by an audio output unit.

Abstract: An electron emission element comprises a P-type semiconductor substrate and electrodes formed on both ends of the semiconductor substrate. A voltage is applied between said electrodes. The P-type semiconductor substrate is irradiated with light to emit the electrons, generated in the P-type semiconductor substrate by photoexcitation, from an electron emitting face at an end of the P-type semiconductor substrate.

Abstract: A scanning optical equipment provided with the means to detect scanning beam spot at more than two points of the scanned surface and the means to enable direct observation of the state of focussing of the beam spot, thus enabling extremely precise control of the state of focussing and forming an extremely high density image which could not be obtained by the conventional methods.

Abstract: An X-ray exposure apparatus for exposing a semiconductor wafer to a mask with X-rays, to print a pattern of the mask onto the wafer, is disclosed. The ambience within a stage accommodating chamber, accommodating a mask, a semiconductor wafer, and the like, is replaced by helium. Thereafter, a predetermined quantity of helium is supplied into the stage accommodating chamber. This effectively prevents degradation of the purity of helium due to air leakage into the chamber. Therefore, any undesirable decrease in the quantity of X-ray transmission can be avoided. Thus, high-precision and high-throughput exposure is ensured.

Abstract: A method of emitting electrons by applying a voltage between a voltage application electrode and a target to be irradiated with the electrons emitted from an electron emission electrode with a conical portion in an electron emission device. The voltage application electrode is formed to oppose the electron emission electrode so as to sandwich an insulating layer therebetween and the target. A charge of the electron emission electrode which is lost by electron emission during an electron emission operation is supplied after the electron emission operation is completed.

Abstract: An electron emission device is provided in which a drive current for driving an electron emission element is maintained at a constant level. The device comprises a transistor having its base provided with a divided voltage. The electron emission element is responsive to the transistor.

Abstract: A multi type electron emission element comprises a plurality of electrodes formed on a deposition surface of an insulating material and each having a conical portion of a single crystal, an insulating layer formed on the deposition surface and having openings respectively centered on the conical portions, and a deriving electrodes, part of which is formed near at least the concial portions, the deriving electrode being formed on the insulating layer.

Abstract: An exposure apparatus usable with synchrotron radiation source wherein the synchrotron radiation is generated by electron injection into a ring. The exposure apparatus is to transfer a semiconductor element pattern of a mask onto a semiconductor wafer by the synchrotron radiation. The apparatus includes a shutter for controlling the exposure of the wafer. The shutter controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined in response to the electron injection, and thereafter, the illuminance distribution is corrected in a predetermined manner. By this, the illuminance distribution data for controlling the shutter always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer are exposed with high precision.

Abstract: An exposure apparatus for lithographically transferring a pattern of a mask onto a workpiece coated with a radiation sensitive material includes a first filter made the same material as of the substrate of the mask, a second filter formed by a base member made of the same material as the mask substrate and being coated with a radiation sensitive material, an illuminometer for measuring illuminance of light passed through the first and second filters, respectively, and a control device for determining an exposure time for lithographic transfer of the pattern of the mask onto the wafer, on the basis of a difference between a measured value as measured through the first filter and a measured value as measured through the second filter.

Abstract: The present invention relates to a temperature control system for a lithographic exposure apparatus wherein a mask and wafer are closely disposed, and predetermined exposure energy is applied to respective shot areas of the wafer through the mask. The exposure energy is a soft-X-ray source, for example. The pattern of the mask is transferred onto the respective shot areas in a step-and-repeat manner. In the apparatus, a temperature control medium liquid is supplied into the wafer chuck which supports the wafer at the exposure position. The flow rate of the temperature control liquid is different during an exposure operation than during a non-exposure-operation. The flow control is determined in consideration of the wafer chuck vibration attributable to the supply of the liquid medium and also, of the heat generation in the wafer by the exposure energy, so that the vibration of the wafer chuck during the exposure operation is suppressed. Simultaneously the temperature rise of the wafer can also be suppressed.

Abstract: A mask cassette and mask cassette loading device, suitably usable in an X-ray exposure apparatus for exposing a wafer to a mask with X-rays contained in synchrotron radiation, to print a pattern of the mask on the wafer, are disclosed. The mask cassette includes a base for accommodating a plurality masks and a cover which can be separated from and coupled to the base only in one direction. When the two are coupled by a locking mechanism, the cassette can be completely closed against atmospheric pressure. The mask cassette loading device includes a common mechanism which serves to release the locking mechanism of the cassette and also, to move the cassette base relative to the cover. Thus, with a simple and compact structure, the protection and replacement of X-ray masks are ensured with certainty.

Abstract: Exposure apparatus and control of the same, for exposing a semiconductor wafer to a mask with a predetermined radiation energy, for manufacture of semiconductor devices, is disclosed. During a time period in which the mask-to-wafer alignment or the exposure of the wafer to the mask is made, the operation of any other driving device that has no participation in the aligning operation or the exposure operation, is prohibited. This ensures high-precision pattern printing.

Abstract: Synchrotron orbital radiation (SOR) exposure system includes a SOR ring and a plurality of exposure apparatus each being coupled to the SOR ring and being arranged to expose a wafer to a mask pattern with X-rays contained in synchrotron radiation from the SOR ring to thereby print the mask pattern on the wafer. Specific arrangement is provided to allow communication of a control of the SOR ring and respective controls of the exposure apparatuses. If any abnormality such as vacuum leakage occurs in one exposure apparatus, the information is transmitted to all the controls to start, in all the exposure apparatuses, appropriate operations to protect the exposure apparatuses against the abnormality. This makes it possible to prevent stoppage of the SOR exposure system as a whole even when any abnormality occurs in one exposure apparatus.

Abstract: A cold cathode device wherein a cold cathode and an anode face each other with an electron transit path intermediated therebetween, and one or more control electrodes structurally insulated from the said cathode and the anode, are provided exposing to the electron transit path. A cold cathode vacuum tube has an electron emission element having a p-type semiconductor region on an electron emission side and a work function lowering region with junctional relation to the p-type semiconductor region; and a plate electrode structurally insulated from the electron emission element by using an insulation layer which is formed with an electron transmit path corresponding in position to an electron emission area of the electron emission element.

Abstract: A scanning optical apparatus comprises a light source unit, an optical system for converging a light beam from the light source unit at a predetermined position, a moving device for moving the converged position of the light beam by the optical system, a deflecting device for deflecting the light beam from the light source unit in a predetermined direction, a light receiving device for receiving the light beam deflected by the deflecting device, a processing device for processing a signal obtained by said light receiving device, and a control device for controlling the moving device corresponding to a signal from the processing device. The light beam emitted from the light source unit is scanned on the light receiving device a plurality of times through the optical system and the deflecting device, while the converged position of the light beam is moved by the moving device.

Abstract: A multi-electron-beam pattern drawing apparatus having a plurality of electron beam sources and a plurality of electron beam sensors, provided on a common base member, is disclosed. The electron beam sources can be selectively driven for different uses, such as a pattern drawing (exposure) purpose and position detecting purpose, for example. In another aspect, the apparatus is provided with a function for correcting the pattern drawing magnification.

Abstract: A wafer chuck usable with a semiconductor exposure apparatus wherein a mask and a semiconductor wafer are placed in a vacuum ambience or a pressure-reduced gas ambience, and wherein the wafer is exposed through the mask to radiation energy such as X-rays contained in a synchrotron radiation beam, by which the pattern of the mask is transferred onto the wafer. The wafer is first attracted on the wafer supporting surface of the chuck by vacuum attraction, and thereafter, the wafer is attracted by the electrostatic attraction force. Thereafter, the vacuum attraction is broken by supplying a gas. When the pattern of the mask is transferred onto the wafer, the wafer is retained on the wafer supporting surface by the electrostatic attraction force only. By this, the sheet-like member (wafer) supporting apparatus can correctly contact the wafer supporting surface to the wafer without being influenced by the undulation of the wafer.

Abstract: An electron emission device comprises an electron emission electrode with a pointed end and a counter electrode positioned opposite to the pointed end, both formed by fine working of a conductive layer laminated on an insulating substrate.

Abstract: A charged-particle beam pattern drawing apparatus for drawing, by use of a charged-particle beam, a desired circuit pattern on a workpiece having a surface coated with a sensitive material, is disclosed. The apparatus includes a data source having data stored therein related to the circuit pattern, a plurality of charged-particle beam producing sources for emitting charged-particle beams toward the workpiece, in accordance with the data supplied thereto from the data source, and a plurality of deflecting electrodes each being provided for a corresponding one of the charged-particle beam producing source, for deflecting the charged-particle beams from the charged-particle beam producing sources independently of each other and in accordance with the data supplied from the data source.

Abstract: A measuring system particularly suitably usable with an apparatus having a plurality of electron emitting sources, for measuring the characteristics of the electron emitting sources is disclosed. In the measuring system, the electron emitting sources are driven so that they emit electron flows of predetermined and different frequencies. The emitted electron flows are collected and, thereafter, only those signals having components corresponding to the predetermined frequencies are extracted. Based on the extracted signals, the characteristics of the electron emitting sources are measured at the same time and independently of each other.