Patents by Inventor Isao Ando

Isao Ando has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12006566
    Abstract: A composite tungsten oxide film having high film smoothness, with a function to shield infrared light by reflecting infrared light by a thermal insulation, while maintaining transparency in a visible light region, and a method for manufacturing the composite tungsten oxide film, and a film-deposited base material or an article using these functions. A composite tungsten oxide film including a composition with a general formula MxWyOz as main components, wherein 0.001?x/y?1, 2.2?z/y?3.0, organic components are not contained substantially, a transmittance in a wavelength of 550 nm is 50% or more, a transmittance in a wavelength of 1400 nm is 30% or less, and also, a reflectance in a wavelength of 1400 nm is 35% or more.
    Type: Grant
    Filed: June 6, 2019
    Date of Patent: June 11, 2024
    Assignee: SUMITOMO METAL MINING CO., LTD.
    Inventors: Keiichi Sato, Isao Ando
  • Publication number: 20210238727
    Abstract: A composite tungsten oxide film includes a composition represented by a general formula MxWyOz (wherein, an element M is one or more elements selected from alkaline metal, alkaline earth metal, Fe, In, Tl, and Sn, an element W is tungsten, and an element O is oxygen) as main components, wherein 0.001?x/y?1, 2.2?z/y?3.0, organic components are not contained substantially, a sheet resistance is 105 ohms per square or more, a transmittance in a wavelength of 550 nm is 50% or more, a transmittance in a wavelength of 1400 nm is 30% or less, and also, an absorptance in a wavelength of 1400 nm is 35% or more, and an absorptance in a wavelength of 800 nm with respect to an absorptance in a wavelength of 1400 nm is 80% or less.
    Type: Application
    Filed: April 17, 2019
    Publication date: August 5, 2021
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Keiichi SATO, Isao ANDO
  • Publication number: 20210206697
    Abstract: [Object] An object is to provide a Sn—Zn—O-based oxide sintered body which has a mechanical strength, a high density, and a low resistance characteristic and which is applied as a sputtering target, and a method for producing the same. [Solving Means] In this oxide sintered body, Sn is contained with an atomic ratio of Sn/(Sn+Zn) being 0.1 or more and 0.9 or less, and a first additional element M is contained with an atomic ratio of M/(Sn+Zn+M+X) being 0.0001 or more and 0.04 or less relative to a total amount of all the metal elements, and a second additional element X is contained with an atomic ratio of X/(Sn+Zn+M+X) being 0.0001 or more and 0.
    Type: Application
    Filed: September 20, 2016
    Publication date: July 8, 2021
    Applicant: Sumitomo Metal Mining Co., Ltd.
    Inventors: Makoto OZAWA, Shigeru IGARASHI, Isao ANDO
  • Publication number: 20210147973
    Abstract: A composite tungsten oxide film having high film smoothness, with a function to shield infrared light by reflecting infrared light by a thermal insulation, while maintaining transparency in a visible light region, and a method for manufacturing the composite tungsten oxide film, and a film-deposited base material or an article using these functions. A composite tungsten oxide film including a composition with a general formula MxWyOz as main components, wherein 0.001?x/y?1, 2.2?z/y?3.0, organic components are not contained substantially, a transmittance in a wavelength of 550 nm is 50% or more, a transmittance in a wavelength of 1400 nm is 30% or less, and also, a reflectance in a wavelength of 1400 nm is 35% or more.
    Type: Application
    Filed: June 6, 2019
    Publication date: May 20, 2021
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Keiichi SATO, Isao ANDO
  • Publication number: 20200299825
    Abstract: A cesium tungsten oxide film has high heat ray shielding performance and a radio wave transmissivity, and a method for manufacturing a cesium tungsten oxide film capable of manufacturing such film by a dry method. A cesium tungsten oxide film including cesium, tungsten and oxygen as main components, wherein, an atomic ratio of the cesium and the tungsten is Cs/W, which is 0.1 or more and 0.5 or less, and the cesium tungsten oxide film is having a hexagonal crystal structure. A method for manufacturing a cesium tungsten oxide film including cesium, tungsten and oxygen as main components, including: a film deposition process using a cesium tungsten oxide target; and a heat treatment process for heat-treating the film at a temperature of 400° C. or more and less than 1000° C., wherein either the film deposition process or the heat treatment process is performed in an atmosphere containing oxygen.
    Type: Application
    Filed: July 20, 2018
    Publication date: September 24, 2020
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Keiichi SATO, Isao ANDO
  • Patent number: 10612127
    Abstract: Provided is a sputtering target having extremely low occurrence of arcing or nodules, and a method for manufacturing such a sputtering target. A flat plate-shaped or cylindrical target material (3, 13) is obtained by processing a material composed of an oxide sintered body. In doing so, a grindstone having a specified grade is used to perform rough grinding of a surface of the material that will become a sputtering surface (5, 15) one or more times in accordance to the grade of the grindstone, after which zero grinding is performed one or more times so that the surface roughness of the sputtering surface (5, 15) has an arithmetic mean roughness Ra of 0.9 ?m or more, a maximum height Rz of 10.0 ?m or less, and RzJIS roughness of 7.0 ?m or less. A sputtering target (1, 11) is obtained by bonding the obtained target material (3, 13) to a backing body (2, 12) by way of a bonding layer (4, 14).
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: April 7, 2020
    Assignee: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Makoto Ozawa, Isao Ando
  • Patent number: 9926236
    Abstract: The present invention provides: an oxide sintered body having superior manufacturing stability, film stability, discharge stability, and mechanical strength; a process for manufacturing the same; and an oxide film obtained by using the oxide sintered body and having an intermediate refractive index. The oxide sintered body comprising In and Si, wherein a Si content is 0.65 to 1.75 in Si/In atomic ratio, a relative density is 90% or more, and a bending strength is 90 N/mm2 or more, is manufactured, and the oxide film with refractive index of 1.70 to 1.90 by a sputtering process using the oxide sintered body is manufactured.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: March 27, 2018
    Assignee: SUMITOMO METAL MINING CO., LTD.
    Inventors: Kentaro Sogabe, Isao Ando, Makoto Ozawa
  • Publication number: 20170130328
    Abstract: Provided is a sputtering target having extremely low occurrence of arcing or nodules, and a method for manufacturing such a sputtering target. A flat plate-shaped or cylindrical target material (3, 13) is obtained by processing a material composed of an oxide sintered body. In doing so, a grindstone having a specified grade is used to perform rough grinding of a surface of the material that will become a sputtering surface (5, 15) one or more times in accordance to the grade of the grindstone, after which zero grinding is performed one or more times so that the surface roughness of the sputtering surface (5, 15) has an arithmetic mean roughness Ra of 0.9 ?m or more, a maximum height Rz of 10.0 ?m or less, and RzJIS roughness of 7.0 ?m or less. A sputtering target (1, 11) is obtained by bonding the obtained target material (3, 13) to a backing body (2, 12) by way of a bonding layer (4, 14).
    Type: Application
    Filed: June 25, 2015
    Publication date: May 11, 2017
    Inventors: Makoto OZAWA, Isao ANDO
  • Publication number: 20170015589
    Abstract: The present invention provides: an oxide sintered body having superior manufacturing stability, film stability, discharge stability, and mechanical strength; a process for manufacturing the same; and an oxide film obtained by using the oxide sintered body and having an intermediate refractive index. The oxide sintered body comprising In and Si, wherein a Si content is 0.65 to 1.75 in Si/In atomic ratio, a relative density is 90% or more, and a bending strength is 90 N/mm2 or more, is manufactured, and the oxide film with refractive index of 1.70 to 1.90 by a sputtering process using the oxide sintered body is manufactured.
    Type: Application
    Filed: January 30, 2015
    Publication date: January 19, 2017
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Kentaro SOGABE, Isao ANDO, Makoto OZAWA
  • Patent number: 9435023
    Abstract: Provided are a method for producing a Cu—Ga alloy powder, by which a high quality Cu—Ga alloy powder to be produced readily; a Cu—Ga alloy powder; a method for producing a Cu—Ga alloy sputtering target; and a Cu—Ga alloy sputtering target. Specifically, a Cu—Ga alloy powder is produced by stirring a mixed powder containing a Cu powder and a Ga in a mass ratio of 85:15 to 55:45 at a temperature of 30 to 700° C. in an inert atmosphere thereby accomplishing alloying. Also a Cu—Ga alloy sputtering target is produced by molding the Cu—Ga alloy powder followed by sintering.
    Type: Grant
    Filed: April 7, 2011
    Date of Patent: September 6, 2016
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Toshio Morimoto, Tatsuya Takahashi, Isao Ando, Tetsufumi Komukai, Masanori Takagi, Eriko Sato, Hirotaka Minami
  • Publication number: 20130192986
    Abstract: Provided are a method for producing a Cu—Ga alloy powder, by which a high quality Cu—Ga alloy powder to be produced readily; a Cu—Ga alloy powder; a method for producing a Cu—Ga alloy sputtering target; and a Cu—Ga alloy sputtering target. Specifically, a Cu—Ga alloy powder is produced by stirring a mixed powder containing a Cu powder and a Ga in a mass ratio of 85:15 to 55:45 at a temperature of 30 to 700° C. in an inert atmosphere thereby accomplishing alloying. Also a Cu—Ga alloy sputtering target is produced by molding the Cu—Ga alloy powder followed by sintering.
    Type: Application
    Filed: April 7, 2011
    Publication date: August 1, 2013
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Toshio Morimoto, Tatsuya Takahashi, Isao Ando, Tetsufumi Komukai, Masanori Takagi, Eriko Sato, Hirotaka Minami
  • Patent number: 4671697
    Abstract: An apparatus for mounting an electromagnetic unit on a frame includes a mounting recess at the bottom of the main body of the electromagnetic unit, a guide recess which is communicated with the mounting recess at one side thereof so that it is normal to the mounting recess, and a slidable member which is slidably inserted into the guide recess and normally biased toward the mounting recess by means of a spring supported by a projection disposed in the guide recess, the improvement comprising a stopper disposed in a hole formed in the slidable member, which opposes the spring bearing in the guide recess. The stopper in the hole also serves as a spring guide.
    Type: Grant
    Filed: May 7, 1985
    Date of Patent: June 9, 1987
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Isao Ando, Hiroaki Tazawa, Yuji Sako, Shigeharu Ootsuka, Yuji Mizuno, Kosaku Ikeda