Abstract: An organic compound represented by the following general formula is provided. In the above formula (1), R11 to R15 each independently represent a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, an aryloxy group, an aralkyl group, an acyl group, or a halogen atom provided that at least one of R11, R13, and R15 represents the alkoxy group or the aryloxy group; and R11 to R15 may form a ring structure therebetween, R5 and R6 each independently represent an alkyl group, an aryl group, or an aralkyl group. In addition, R21 to R24 each independently represent a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, an aryloxy group, an aralkyl group, an acyl group, or a halogen atom and may form a ring structure therebetween. The above groups except the acyl group may be substituted when necessary.

Abstract: To determine and detect 8-oxo-2?-deoxyguanosine in an aqueous sample solution with high sensitivity and specifically, provided is a polymer including a repetition structure represented by any one of the following general formulae 2 to 5, in which a group represented by any one of the following general formulae 6 to 11 is linked to the repetition structure represented by any one of the following general formulae 2 to 5 through a divalent linking group L.

Abstract: The present invention relates to an electrophotographic photosensitive member in which a surface layer contains a polymer of a hole transport material having a polymerizable functional group, and the hole transport material has a specific fluorene structure.

Abstract: An electrophotographic photosensitive member includes a support member, a charge generating layer containing a phthalocyanine pigment as a charge generating material, a charge transport layer containing a charge transporting material in this order. The charge generating layer has a thickness of less than 200 nm, and the phthalocyanine pigment includes phthalocyanine crystalline particles having a particle size distribution and satisfies a requirement that the volume average of the products of ?i and ?i is 0.31 or more.

Abstract: An electrophotographic photosensitive member includes a substrate and a photosensitive layer containing a phthalocyanine pigment. The crystalline particles of the phthalocyanine pigment have a crystallite correlation length r and a particle size R of 400 nm or less, and a parameter k defined by r/R is in the range of 0.17 to 0.42.

Abstract: The present invention provides an electrophotographic photosensitive member that allows positive ghost to be reduced even in repeated use. The electrophotographic photosensitive member of the present invention is an electrophotographic photosensitive member wherein an undercoat layer contains a polymerization product of a composition including a compound represented by the following formula (1).

Abstract: An organic compound represented by the following general formula is provided. In the above formula (1), R11 to R15 each independently represent a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, an aryloxy group, an aralkyl group, an acyl group, or a halogen atom provided that at least one of R11, R13, and R15 represents the alkoxy group or the aryloxy group; and R11 to R15 may form a ring structure therebetween, R5 and R6 each independently represent an alkyl group, an aryl group, or an aralkyl group. In addition, R21 to R24 each independently represent a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, an aryloxy group, an aralkyl group, an acyl group, or a halogen atom and may form a ring structure therebetween. The above groups except the acyl group may be substituted when necessary.

Abstract: An electrophotographic photosensitive member includes a substrate and a photosensitive layer containing a phthalocyanine pigment. The crystalline particles of the phthalocyanine pigment have a crystallite correlation length r and a particle size R of 400 nm or less, and a parameter k defined by r/R is in the range of 0.17 to 0.42.

Abstract: The present invention provides an electrophotographic photosensitive member that allows positive ghost to be reduced even in repeated use. The electrophotographic photosensitive member of the present invention is an electrophotographic photosensitive member wherein an undercoat layer contains a polymerization product of a composition including a compound represented by the following formula (1).

Abstract: There is provided a new iridium complex including phenylpyridine as a ligand, the iridium complex having a basic skeleton in which a triazine ring is bonded to a phenyl ring.

Abstract: An organic light-emitting device includes a first electrode, a second electrode, and a light-emitting layer disposed between the first and second electrodes. The light-emitting layer contains an organic compound emitting photoluminescent light with a peak wavelength of 430 to 480 nm. The organic compound has a profile factor of 0.02 or less at a wave number of 1,300 to 1,680 cm?1 as calculated from Huang-Rhys factors.

Abstract: There is provided a new iridium complex including phenylpyridine as a ligand, the iridium complex having a basic skeleton in which a triazine ring is bonded to a phenyl ring.

Abstract: An organic light-emitting device includes a first electrode, a second electrode, and a light-emitting layer disposed between the first and second electrodes. The light-emitting layer contains an organic compound emitting photoluminescent light with a peak wavelength of 430 to 480 nm. The organic compound has a profile factor of 0.02 or less at a wave number of 1,300 to 1,680 cm?1 as calculated from Huang-Rhys factors.

Abstract: An organic light-emitting device includes a first electrode, a second electrode, and a light-emitting layer disposed between the first and second electrodes. The light-emitting layer contains an organic compound emitting photoluminescent light with a peak wavelength of 430 to 480 nm. The organic compound has a profile factor of 0.02 or less at a wave number of 1,300 to 1,680 cm?1 as calculated from Huang-Rhys factors.

Abstract: An organic light-emitting device includes a first electrode, a second electrode, and a light-emitting layer disposed between the first and second electrodes. The light-emitting layer contains an organic compound emitting photoluminescent light with a peak wavelength of 430 to 480 nm. The organic compound has a profile factor of 0.02 or less at a wave number of 1,300 to 1,680 cm?1 as calculated from Huang-Rhys factors.

Abstract: A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.

Abstract: A light beam is emitted to a test pattern place formed in the scribe area on the wafer for height measurement, an electron beam is emitted to the test pattern place for width and contrast measurement and their correlations are stored. The three-dimensional profile of a pattern in a semiconductor device on the wafer is determined by irradiating the pattern with an electron beam to measure the width and contrast and estimating the height of the pattern by inferring from a correlation corresponding to the measured width and contrast. Thus, a three-dimensional profile measuring system and method capable of measuring the three-dimensional profile of a micropattern in a semiconductor device without cutting the wafer are provided.

Abstract: A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.

Abstract: A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.

Abstract: A light beam is emitted to a test pattern place formed in the scribe area on the wafer for height measurement, an electron beam is emitted to the test pattern place for width and contrast measurement and their correlations are stored. The three-dimensional profile of a pattern in a semiconductor device on the wafer is determined by irradiating the pattern with an electron beam to measure the width and contrast and estimating the height of the pattern by inferring from a correlation corresponding to the measured width and contrast. Thus, a three-dimensional profile measuring system and method capable of measuring the three-dimensional profile of a micropattern in a semiconductor device without cutting the wafer are provided.