Abstract: An adjustable steering apparatus includes: a movable bracket to which a steering jacket including a steering wheel is fixed and to which a movable telescopic member having a tooth portion is fixedly mounted; a stationary bracket which is disposed externally of the movable bracket and fixed to a vehicle body, and to which a stationary tilt member having a tooth portion is fixedly mounted; a movable tilt member having a tooth portion meshingly engageable with the tooth portion of the stationary tilt member; and a stationary telescopic member having a tooth portion meshingly engageable with the tooth portion of the movable telescopic member. An elastic body for release from meshing engagement is disposed on an outer side of the stationary bracket, the elastic body being capable of urging the movable tilt member away from the stationary tilt member.

Abstract: A method of manufacturing fine particles of the invention includes introducing a reactive gas flow containing a fine particle source material into a reactor from one side, growing fine particles in a gas phase by heating the fine particle source material in the reactive gas flow, introducing a diluting gas flow into the reactor from another side being almost counter-flow to the reactive gas flow, equalizing flow rates of the reactive gas flow and the diluting gas flow substantially with respect to a cross section of a flow channel, and then stopping growth of the fine particles by merging the reactive gas flow and the diluting gas flow.

Abstract: A conductive film has a plurality of clearances (openings) and a plurality of auxiliary clearances. The plurality of clearances and the plurality of auxiliary clearances are formed to have such numerical apertures and locations that generate no bias in the distribution of conductive film in consideration of the entire conductive film. The conductive film can disperse stress caused by thermal expansion etc., to ease by having the plurality of clearances and the plurality of auxiliary clearances. Accordingly, the conductive film is less prone to being peeled off the insulating film. Further, since the distribution of conductive film is substantially uniform as a whole, the transfer characteristics that are fixed by the distribution become substantially uniform as a whole.

Abstract: A particle producing apparatus includes a reaction container, an introduction portion for introducing a source gas and a reaction inhibitor generating gas into the reaction container, an inert gas introduction portion for introducing a carrier gas into the reaction container, a heater provided on the reaction container, and an exhaust portion. The growth of particles is controlled using a particle producing reaction and a reverse reaction.

Abstract: A method of manufacturing fine particles of the invention includes introducing a reactive gas flow containing a fine particle source material into a reactor from one side, growing fine particles in a gas phase by heating the fine particle source material in the reactive gas flow, introducing a diluting gas flow into the reactor from another side being almost counter-flow to the reactive gas flow, equalizing flow rates of the reactive gas flow and the diluting gas flow substantially with respect to a cross section of a flow channel, and then stopping growth of the fine particles by merging the reactive gas flow and the diluting gas flow.

Abstract: A particle producing apparatus includes a reaction container, an introduction portion for introducing a source gas and a reaction inhibitor generating gas into the reaction container, an inert gas introduction portion for introducing a carrier gas into the reaction container, a heater provided on the reaction container, and an exhaust portion. The growth of particles is controlled using a particle producing reaction and a reverse reaction.

Abstract: A conductive film has a plurality of clearances (openings) and a plurality of auxiliary clearances. The plurality of clearances and the plurality of auxiliary clearances are formed to have such numerical apertures and locations that generate no bias in the distribution of conductive film in consideration of the entire conductive film. The conductive film can disperse stress caused by thermal expansion etc., to ease by having the plurality of clearances and the plurality of auxiliary clearances. Accordingly, the conductive film is less prone to being peeled off the insulating film. Further, since the distribution of conductive film is substantially uniform as a whole, the transfer characteristics that are fixed by the distribution become substantially uniform as a whole.

Abstract: A method of forming a particle comprises the steps of: forming a droplet containing a first material; forming a core portion by heating the droplet to thermally decompose in a reaction vessel; and forming a shell portion which coats the core portion by heating a raw material gas containing a second material which differs from the first material to thermally decompose in the reaction vessel.

Abstract: A conductive film has a plurality of clearances (openings) and a plurality of auxiliary clearances. The plurality of clearances and the plurality of auxiliary clearances are formed to have such numerical apertures and locations that generate no bias in the distribution of conductive film in consideration of the entire conductive film. The conductive film can disperse stress caused by thermal expansion etc., to ease by having the plurality of clearances and the plurality of auxiliary clearances. Accordingly, the conductive film is less prone to being peeled off the insulating film. Further, since the distribution of conductive film is substantially uniform as a whole, the transfer characteristics that are fixed by the distribution become substantially uniform as a whole.

Abstract: A particle producing apparatus includes a reaction container, an introduction portion for introducing a source gas and a reaction inhibitor generating gas into the reaction container, an inert gas introduction portion for introducing a carrier gas into the reaction container, a heater provided on the reaction container, and an exhaust portion. The growth of particles is controlled using a particle producing reaction and a reverse reaction.

Abstract: A conductive film has a plurality of clearances (openings) and a plurality of auxiliary clearances. The plurality of clearances and the plurality of auxiliary clearances are formed to have such numerical apertures and locations that generate no bias in the distribution of conductive film in consideration of the entire conductive film. The conductive film can disperse stress caused by thermal expansion etc., to ease by having the plurality of clearances and the plurality of auxiliary clearances. Accordingly, the conductive film is less prone to being peeled off the insulating film. Further, since the distribution of conductive film is substantially uniform as a whole, the transfer characteristics that are fixed by the distribution become substantially uniform as a whole.

Abstract: A method of manufacturing fine particles of the invention includes introducing a reactive gas flow containing a fine particle source material into a reactor from one side, growing fine particles in a gas phase by heating the fine particle source material in the reactive gas flow, introducing a diluting gas flow into the reactor from another side being almost counter-flow to the reactive gas flow, equalizing flow rates of the reactive gas flow and the diluting gas flow substantially with respect to a cross section of a flow channel, and then stopping growth of the fine particles by merging the reactive gas flow and the diluting gas flow.

Abstract: There is provided a semiconductor device manufacturing method that comprises a first step of loading a processed substrate in a reaction chamber, a second step of introducing a reaction gas into the reaction chamber at a predetermined flow rate, a third step of maintaining an interior of the reaction chamber at a predetermined pressure, a fourth step of starting generation of plasma by supplying a high frequency power to an electrode arranged in the reaction chamber, a fifth step of applying a predetermined process to the processed substrate, and a sixth step of stopping generation of the plasma by stopping supply of the high frequency power after the predetermined process is completed, wherein the reaction gas is introduced continuously when the generation of the plasma is stopped.

Abstract: A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative voltage to the electrostatic chuck. After applying the negative voltage, the substrate is stuck onto the electrostatic chuck, a process gas is introduced into the process chamber, discharge plasma is generated, and the substrate is processed as predetermined.

Abstract: A method of supplying an excited oxygen, which comprises the steps of exciting a oxygen gas or a gas containing an oxygen atoms with plasma in a plasma discharge zone thereby forming an excited oxygen, and transferring a gas containing the excited oxygen into a reaction zone disposed next to the plasma discharge zone while keeping a pressure within the plasma discharge zone lower than that of the reaction zone. In a reaction chamber, a reaction by the excited oxygen is effected. As a result, the formation of a thin film on a substrate disposed in a reaction chamber, the etching of the substrate and the cleaning of the interior of the reaction chamber can be carried out.

Abstract: An electron microscope uses a camera with a plurality of fluorescent elements separated by walls and a corresponding plurality of detector elements which receive light from fluorescent elements. The walls prevent electrons incident on one fluorescent element from affecting an adjacent fluorescent element, thereby reducing blurring of the image produced by the camera. The fluorescent elements may be connected to the detector elements by waveguides having filters which permit the intensity of light transmitted to each detector element to be adjusted to give a uniform response. The fluorescent elements may be arranged in a linear array, and the electron microscope is then operated to cause an image of a sample to scan across the array.

Abstract: A vapor-phase growth method comprising the steps of introducing a silicon-containing gas and ozone into a reaction vessel containing a sample, and introducing excited oxygen obtained by exciting an oxygen gas or an oxygen-containing gas, into the reaction vessel at the same the as, before, or after the silicon-containing gas and the ozone are introduced into the reaction vessel. The silicon-containing gas and the ozone react, forming an intermediate product which can readily condense. The intermediate product reacts with the excited oxygen, thereby forming a thin insulating film which excels in step coverage and has good insulating property.