Patents by Inventor Isao Suzumura
Isao Suzumura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230185144Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.Type: ApplicationFiled: February 6, 2023Publication date: June 15, 2023Applicant: Japan Display Inc.Inventors: Akihiro HANADA, Toshihide JINNAI, Isao SUZUMURA, Hajime WATAKABE, Ryo ONODERA
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Patent number: 11656514Abstract: The purpose of the present invention is to obviate patterning defects of electrodes in through-holes formed in an organic passivation film for connection between TFTs and pixel electrodes in an ultra-high definition display device. To achieve the foregoing, the present invention has a configuration such as the following. This display device, in which a TFT (thin-film transistor) is formed on a substrate, an organic passivation film is formed covering the TFT, and a first pixel electrode, a first common electrode, a second pixel electrode, and a second common electrode are formed on the organic passivation film, is characterized in that the first pixel electrode is connected to the TFT via a through-hole formed in the organic passivation film, the through-hole is filled with a filler, and an end of the second pixel electrode is present on the upper side of the filler.Type: GrantFiled: June 28, 2022Date of Patent: May 23, 2023Assignee: Japan Display Inc.Inventors: Fumiya Kimura, Isao Suzumura
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Patent number: 11630361Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.Type: GrantFiled: September 10, 2021Date of Patent: April 18, 2023Assignee: Japan Display Inc.Inventors: Akihiro Hanada, Toshihide Jinnai, Isao Suzumura, Hajime Watakabe, Ryo Onodera
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Publication number: 20230083488Abstract: A detection device includes a substrate, a plurality of photodiodes arranged on the substrate, a plurality of transistors provided correspondingly to each of the photodiodes, an insulating film that covers the transistors, and a plurality of lower electrodes each of which is provided above the insulating film correspondingly to each of the photodiodes, and is electrically coupled to the transistors. The lower electrodes and the photodiodes are stacked in this order above the insulating film, and one of the lower electrodes and one of the photodiodes are provided so as to overlap the transistors in a plan view from a direction orthogonal to the substrate.Type: ApplicationFiled: November 22, 2022Publication date: March 16, 2023Inventors: Ryuji MORI, Isao SUZUMURA, Masahiro TADA, Takashi DOI
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Publication number: 20230081420Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: ApplicationFiled: November 9, 2022Publication date: March 16, 2023Inventors: Isao SUZUMURA, Kazufumi WATABE, Yoshinori ISHII, Hidekazu MIYAKE, Yohei YAMAGUCHI
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Publication number: 20230026937Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer and a plurality of transparent conductive layers. The transparent conductive layers include a pixel electrode, a first conductive layer and a second conductive layer. The pixel electrode is in contact with the second conductive layer. The second conductive layer is in contact with the first conductive layer. The first conductive layer is brought into contact with a second region of the semiconductor layer through a first contact hole.Type: ApplicationFiled: October 4, 2022Publication date: January 26, 2023Applicant: Japan Display Inc.,Inventors: Isao SUZUMURA, Fumiya KIMURA, Kazuhide MOCHIZUKI, Hitoshi TANAKA, Kenichi AKUTSU, Atsuko SHIMADA
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Publication number: 20230020074Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.Type: ApplicationFiled: September 15, 2022Publication date: January 19, 2023Applicant: Japan Display Inc.Inventors: Yohei YAMAGUCHI, Arichika ISHIDA, Hidekazu MIYAKE, Hiroto MIYAKE, Isao SUZUMURA
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Patent number: 11550195Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.Type: GrantFiled: October 21, 2021Date of Patent: January 10, 2023Assignee: JAPAN DISPLAY INC.Inventors: Toshihide Jinnai, Hajime Watakabe, Akihiro Hanada, Ryo Onodera, Isao Suzumura
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Publication number: 20220399403Abstract: A photo detecting device, includes a plurality of photodiodes arranged above a substrate, a lower electrode and a first inorganic insulating film that are provided between the substrate and the photodiodes in a direction orthogonal to a surface of the substrate, and an upper electrode provided above the photodiodes. Each of the photodiodes comprises an active layer, a first carrier transport layer provided between the active layer and the lower electrode, and a second carrier transport layer provided between the active layer and the upper electrode, the first inorganic insulating film is provided between the lower electrode and the first carrier transport layer, and the first inorganic insulating film covers at least an end on an outer edge side of the lower electrode.Type: ApplicationFiled: June 13, 2022Publication date: December 15, 2022Applicant: Japan Display Inc.Inventors: Isao SUZUMURA, Kento HIMOTO, Takashi NAKAMURA, Masahiro TADA, Yasushi TOMIOKA
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Patent number: 11521990Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: GrantFiled: June 2, 2021Date of Patent: December 6, 2022Assignee: Japan Display Inc.Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
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Publication number: 20220373846Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer, a third insulating layer, a color filter, and transparent conductive layers including a pixel electrode, a first conductive layer, and a second conductive layer. The first conductive layer is located between the second insulating layer and the third insulating layer, and is in contact with a second area of the semiconductor layer. The second conductive layer is located on the color filter and is in contact with the first conductive layer. The pixel electrode is located on the second conductive layer and is in contact with the second conductive layer.Type: ApplicationFiled: May 20, 2022Publication date: November 24, 2022Inventors: Fumiya KIMURA, Isao SUZUMURA, Junko NAGASAWA, Atsuko IMOTO
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Publication number: 20220359843Abstract: According to one embodiment, a sensor device includes an insulating base including a meandering strip-shaped portion and an island-shaped portion, a first inorganic insulating film on the island-shaped portion, a first wiring layer on the first inorganic insulating film, a second inorganic insulating film on the first wiring layer, a second wiring layer on the second inorganic insulating film, an organic insulating film on the second wiring layer, a barrier film covering the organic insulating film, a sensor element on the barrier film, and a sealing film covering the sensor element. The barrier film covers side surfaces of the organic insulating film, and the sealing film is in contact with the barrier film and the second inorganic insulating film.Type: ApplicationFiled: April 29, 2022Publication date: November 10, 2022Inventors: Isao SUZUMURA, Takumi SANO
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Patent number: 11493812Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer and a plurality of transparent conductive layers. The transparent conductive layers include a pixel electrode, a first conductive layer and a second conductive layer. The pixel electrode is in contact with the second conductive layer. The second conductive layer is in contact with the first conductive layer. The first conductive layer is brought into contact with a second region of the semiconductor layer through a first contact hole.Type: GrantFiled: October 9, 2020Date of Patent: November 8, 2022Assignee: JAPAN DISPLAY INC.Inventors: Isao Suzumura, Fumiya Kimura, Kazuhide Mochizuki, Hitoshi Tanaka, Kenichi Akutsu, Atsuko Shimada
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Patent number: 11474406Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.Type: GrantFiled: December 18, 2020Date of Patent: October 18, 2022Assignee: Japan Display Inc.Inventors: Yohei Yamaguchi, Arichika Ishida, Hidekazu Miyake, Hiroto Miyake, Isao Suzumura
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Publication number: 20220326581Abstract: The purpose of the present invention is to obviate patterning defects of electrodes in through-holes formed in an organic passivation film for connection between TFTs and pixel electrodes in an ultra-high definition display device. To achieve the foregoing, the present invention has a configuration such as the following. This display device, in which a TFT (thin-film transistor) is formed on a substrate, an organic passivation film is formed covering the TFT, and a first pixel electrode, a first common electrode, a second pixel electrode, and a second common electrode are formed on the organic passivation film, is characterized in that the first pixel electrode is connected to the TFT via a through-hole formed in the organic passivation film, the through-hole is filled with a filler, and an end of the second pixel electrode is present on the upper side of the filler.Type: ApplicationFiled: June 28, 2022Publication date: October 13, 2022Inventors: Fumiya KIMURA, Isao SUZUMURA
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Publication number: 20220293663Abstract: A purpose of the present invention is to countermeasure a connection failure of an electrode in an optical sensor using PIN type photo conductive film. A structure of the present invention is as follows. A semiconductor device including an optical sensor, the optical sensor including: a thin film transistor formed on a substrate, and a photo diode formed above the thin film transistor, in which the photo diode includes an anode, a photo conductive film and a cathode, the cathode is constituted from a titanium film, and a first transparent conductive film is formed between the titanium film and the photo conductive film.Type: ApplicationFiled: June 2, 2022Publication date: September 15, 2022Inventors: Marina Mochizuki, Isao Suzumura
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Publication number: 20220246764Abstract: The present invention addresses the problem of: realizing a TFT that uses an oxide semiconductor and that is capable of maintaining stable characteristics even in the case where the TFT is miniaturized; and realizing a display device that has high-definition pixels using such a TFT. To solve this problem, the present invention has the following configuration. A semiconductor device including an oxide semiconductor TFT formed using an oxide semiconductor film 109, the semiconductor device being characterized in that: the channel length of the oxide semiconductor TFT is 1.3 to 2.3 ?m; and the sheet resistance of a source region 1092 and a drain region 1091 of the oxide semiconductor film 109 is 1.4 to 20 K?/?.Type: ApplicationFiled: April 20, 2022Publication date: August 4, 2022Applicant: Japan Display Inc.Inventors: Isao SUZUMURA, Hajime WATAKABE, Akihiro HANADA, Ryo ONODERA, Tomoyuki ITO
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Publication number: 20220238825Abstract: The purpose of the present invention is to prevent a decrease in light reflection characteristic and an increase in electric resistance due to oxidation of silver in a semiconductor device including an optical sensor in which silver is used for an anode of a photoconductive film. The present invention has a following structure to solve the problem: A semiconductor device includes a thin film transistor formed on a substrate 100. An electrode connected electrically to the thin film transistor is formed of a silver film 128. A first indium tin oxide (ITO) film 129 is formed on the silver film 128. An alumina (AlOx) film 130 is formed on the first ITO film 129.Type: ApplicationFiled: April 14, 2022Publication date: July 28, 2022Inventors: Marina MOCHIZUKI, Isao SUZUMURA
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Publication number: 20220208795Abstract: The purpose of the present invention is to decrease the resistance of the drain and source in the TFT of the oxide semiconductor as well as to have stable Vd-Id characteristics of the TFT. The structure of the present invention is as follows: A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising: a gate insulating film formed on the oxide semiconductor film, an aluminum oxide film formed on the gate insulating film, a gate electrode formed on the aluminum oxide film, a side spacer formed on both sides of the gate electrode, and an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source, wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film.Type: ApplicationFiled: March 15, 2022Publication date: June 30, 2022Inventor: Isao SUZUMURA
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Patent number: 11348948Abstract: The purpose of the present invention is to realize the display device having thin film transistors of the oxide semiconductor of stable characteristics. An example of the concrete structure is that: A display device having a substrate including a display area, plural pixels formed in the display area, the pixel includes a first thin film transistor having an oxide semiconductor film, a first insulating film made of a first silicon oxide on a first side of the oxide semiconductor film, a second insulating film made of a second silicon oxide on a second side of the oxide semiconductor film, wherein oxygen desorption amount per unit area from the first insulating film is larger than that from the second insulating film, when measured by TDS (Thermal Desorption Spectrometry) provided M/z=32 and a measuring range in temperature is from 100 centigrade to 500 centigrade.Type: GrantFiled: July 17, 2020Date of Patent: May 31, 2022Assignee: JAPAN DISPLAY INC.Inventors: Akihiro Hanada, Yohei Yamaguchi, Hirokazu Watanabe, Isao Suzumura