Abstract: A process/method for cleaning wafers that eliminates and/or reduces pitting caused by standard clean 1 by performing a pre-etch and then passivating the wafer surface prior to the application of the standard clean 1. The process/method may be especially useful for advanced front end of line post-CPM cleaning. In one embodiment, the invention is a method of processing a substrate comprising: a) providing at least one substrate; b) etching a surface of the substrate by applying an etching solution; c) passivating the etched surface of the substrate by applying ozone; and d) cleaning the passivated surface of the substrate by applying an aqueous solution comprising ammonium hydroxide and hydrogen peroxide.

Abstract: A system of drying a surface of a substrate is provided. The system includes a rotary support for supporting a substrate; and an assembly comprising a first dispenser, a second dispenser, and a third dispenser, the assembly positioned above the surface of the substrate, the second and third dispensers positioned on the assembly adjacent to and in contact with one another and spaced from the first dispenser, the second dispenser having an opening that is larger than an opening of the third dispenser, and the second dispenser being located between the first and third dispensers; and means for translating the assembly generally parallel to the surface of the substrate.

Abstract: A system (FIG. 5) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (10), dispense lines (20, 21, 22), feed lines (30, 31, 32), a recirculation line (40), a process controller (200), a concentration sensor (50), a particle counter (55), and a bleed line (90). The invention dynamically controls the concentration ratio of the components of the etchant being used and/or dynamically controls the particle count within the etchant during the processing of the at least one substrate. As a result etchant bath life is increased and etching process parameters are more tightly controlled.

Abstract: A method of manufacturing a solar cell wherein a pre-cleaning step is completed prior to a saw damage removal step and prior to texturization, thereby resulting in the subsequently formed textured surface to have a more homogeneous textural morphology.

Abstract: A system of drying a surface of a substrate is provided. The system includes a rotary support for supporting a substrate; and an assembly comprising a first dispenser, a second dispenser, and a third dispenser, the assembly positioned above the surface of the substrate, the second and third dispensers positioned on the assembly adjacent to and in contact with one another and spaced from the first dispenser, the second dispenser having an opening that is larger than an opening of the third dispenser, and the second dispenser being located between the first and third dispensers; and means for translating the assembly generally parallel to the surface of the substrate.

Abstract: A method of drying a surface of a substrate is provided. The method includes supporting and rotating a substrate; applying a liquid to the substrate surface at or near a rotational center point via a liquid dispenser (so that a film of the liquid is formed on the surface); applying a drying fluid to the substrate surface at a predetermined distance from the rotational center point via one or more drying fluid dispensers; and manipulating the drying fluid dispenser(s) so that the location at which the drying fluid is applied to the substrate is moved in a direction toward the rotational center point, while at the same time manipulating the liquid dispenser so that the location at which the liquid is applied to the substrate is moved in a direction outward from the rotational center point. The liquid dispenser and drying fluid dispenser(s) noted above can be located on and/or within an assembly. The assembly can include a first dispenser, a second dispenser, and a third dispenser.

Abstract: A method of processing a substrate comprising a) supporting a substrate having a hydrophilic surface in a substantially horizontal orientation, b) rotating the substrate, c) applying a film of an aqueous solution of HF to the hydrophilic surface of the substrate for a period of time sufficient to convert the hydrophilic surface into a hydrophobic surface, wherein the concentration of HF is between about 0.1% to about 0.5% by weight of HF in water and the period of time is between about 100 and about 300 seconds, d) applying DI water to the hydrophobic surface of the substrate, and e) applying a drying fluid to the hydrophobic surface of the substrate so as to substantially dry the hydrophobic surface.

Abstract: A system (FIG. 5) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (10), dispense lines (20, 21, 22), feed lines (30, 31, 32), a recirculation line (40), a process controller (200), a concentration sensor (50), a particle counter (55), and a bleed line (90). The invention dynamically controls the concentration ratio of the components of the etchant being used and/or dynamically controls the particle count within the etchant during the processing of the at least one substrate. As a result etchant bath life is increased and etching process parameters are more tightly controlled.

Abstract: A method and system for supplying an ultra-pure fluid to a substrate process chamber using point-of-use filtration and purification. The method and system provide ability to automatically monitor and control contamination levels in fluids in real time and to stop substrate processing when contamination levels exceed predetermined thresholds.

Abstract: A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.

Abstract: A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.

Abstract: A system and method for the acoustic-assisted processing of a substrate, such as a semiconductor wafer, that reduces and/or eliminates damage. The invention suppresses cavitation and pressure effects within the cleaning liquid that may damage devices on the wafer by maintaining the liquid under a constant positive pressure. In one aspect, the invention is a method of processing a substrate comprising: a) supporting a substrate; b) applying a film of liquid to at least one surface of the substrate; c) positioning a transmitter so that at least a portion of the transmitter is in contact with the film of liquid, the transmitter operably coupled to a transducer; d) generating acoustical energy with the transducer; and e) transmitting the acoustical energy to the film of liquid via the transmitter so that the liquid is under only positive pressure during application of the acoustical energy.

Abstract: A system and method for processing and/or cleaning substrates using sonic energy that eliminates or reduces damage to the substrates. In one aspect, the invention utilizes and produces low power density sonic energy to effectively remove particles from a substrate. In another aspect, the invention utilizes and generates a clean electrical signal for driving a source of sonic energy, such as a transducer.

Abstract: A system and method for processing and/or cleaning substrates using sonic energy that eliminates or reduces damage to the substrates. In one aspect, the invention utilizes and produces low power density sonic energy to effectively remove particles from a substrate. In another aspect, the invention utilizes and generates a clean electrical signal for driving a source of sonic energy, such as a transducer.

Abstract: A system and method of supplying power to a sonic energy source that minimizes damage to substrate devices during processing while increasing processing efficiency and/or effectiveness. The system and method utilize the concept of ramping the amplitude and/or varying the frequency of the electrical signal used to drive the sonic energy source, thereby resulting in corresponding ramping and/or variations in the amplitude and frequency of the resulting sonic energy being applied to the substrate.

Abstract: A system and method for cleaning semiconductor wafers wherein the use of SCI and SC2 is eliminated and replaced by the use DIO3 and dilute chemistries.

Abstract: A system, method, and apparatus for supplying a gas-liquid vapor to a process tank for performing semiconductor manufacturing. In one aspect, the invention is a method of supplying a gas-liquid vapor to a process tank comprising: supplying a gas stream through at least one hydrophobic tube; exposing the outside surface of the hydrophobic tube to a liquid so that a vapor of the liquid permeates the hydrophobic tube and enters the gas stream, forming a gas-liquid vapor inside the tube; and transporting the gas-liquid vapor to the process tank. In another aspect, the invention is an apparatus for supplying a gas-liquid vapor to a process tank comprising: at least one hydrophobic tube adapted to carry a gas; and a housing forming a chamber that surrounds the tube, the chamber adapted to receive a liquid that can permeate the tube, forming a gas-liquid vapor.

Abstract: A system, method, and apparatus for supplying a gas-liquid vapor to a process tank for performing semiconductor manufacturing. In one aspect, the invention is a method of supplying a gas-liquid vapor to a process tank comprising: supplying a gas stream through at least one hydrophobic tube; exposing the outside surface of the hydrophobic tube to a liquid so that a vapor of the liquid permeates the hydrophobic tube and enters the gas stream, forming a gas-liquid vapor inside the tube; and transporting the gas-liquid vapor to the process tank. In another aspect, the invention is an apparatus for supplying a gas-liquid vapor to a process tank comprising: at least one hydrophobic tube adapted to carry a gas; and a housing forming a chamber that surrounds the tube, the chamber adapted to receive a liquid that can permeate the tube, forming a gas-liquid vapor.

Abstract: An apparatus for transporting semiconductor wafers between processing steps that can also be used to support the wafers during various processing steps. The apparatus minimizes the obstruction of fluid flow in the process tank, reduces the amount of devices that will fail due to edge exclusion, and reduces processing times. In one embodiment, the apparatus is a wafer carrier comprising a wire frame having three load supporting members, the load supporting members having a plurality of wafer engaging elements adapted to support a plurality of wafers.

Abstract: A method of removing photoresist from semiconductor wafers through the use of a sparger plate. According to the inventive method, at least one semiconductor wafer is positioned in a process tank above the sparger plate. A mixture of ozone and deionized water is introduced into the process tank at a position below the sparger plate. The mixture of ozone and deionized water is then introduced across the wafer via the sparger plate at an increased flow velocity while the wafer is submerged in the mixture of deionized water and ozone.