Patents by Inventor Itsuji Yoshikawa

Itsuji Yoshikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal film pattern and manufacturing method thereof
    Patent number: 6798032
    Abstract: A SnO2 film having a prescribed pattern feature is formed on a substrate by a wet film-formation technology (e.g., sol-gel method). A Ni film is formed on the SnO2 film by an electroless plating method. The electroless plating method is conducted in the presence of at least one sulfur-containing compound selected from the group consisting of thiosulfates, thiocyanates and sulfur-containing organic compounds.
    Type: Grant
    Filed: June 5, 2003
    Date of Patent: September 28, 2004
    Assignees: Sharp Kabushiki Kaisha, Meltex Inc., Sumitomo Osaka Cemento Co., Ltd.
    Inventors: Yoshihiro Izumi, Yoshimasa Chikama, Satoshi Kawashima, Takaharu Hashimoto, Itsuji Yoshikawa, Masaaki Ishikawa
  • Metal film pattern and manufacturing method thereof
    Publication number: 20030207567
    Abstract: A SnO2 film having a prescribed pattern feature is formed on a substrate by a wet film-formation technology (e.g., sol-gel method). A Ni film is formed on the SnO2 film by an electroless plating method. The electroless plating method is conducted in the presence of at least one sulfur-containing compound selected from the group consisting of thiosulfates, thiocyanates and sulfur-containing organic compounds.
    Type: Application
    Filed: June 5, 2003
    Publication date: November 6, 2003
    Applicants: Sharp Kabushiki Kaisha, Meltex, Inc., Sumitomo Osaka Cemento Co., Ltd.
    Inventors: Yoshihiro Izumi, Yoshimasa Chikama, Satoshi Kawashima, Takaharu Hashimoto, Itsuji Yoshikawa, Masaaki Ishikawa
  • Method of making a metal film pattern
    Patent number: 6627544
    Abstract: A SnO2 film having a prescribed pattern feature is formed on a substrate by a wet film-formation technology (e.g., sol-gel method). A Ni film is formed on the SnO2 film by an electroless plating method. The electroless plating method is conducted in the presence of at least one sulfur-containing compound selected from the group consisting of thiosulfates, thiocyanates and sulfur-containing organic compounds.
    Type: Grant
    Filed: May 22, 2002
    Date of Patent: September 30, 2003
    Assignees: Sharp Kabushiki Kaisha, Meltex Inc., Sumitomo Osaka Cemento Co., Ltd.
    Inventors: Yoshihiro Izumi, Yoshimasa Chikama, Satoshi Kawashima, Takaharu Hashimoto, Itsuji Yoshikawa, Masaaki Ishikawa
  • Metal film pattern and manufacturing method thereof
    Publication number: 20020187266
    Abstract: A SnO2 film having a prescribed pattern feature is formed on a substrate by a wet film-formation technology (e.g., sol-gel method). A Ni film is formed on the SnO2 film by an electroless plating method. The electroless plating method is conducted in the presence of at least one sulfur-containing compound selected from the group consisting of thiosulfates, thiocyanates and sulfur-containing organic compounds.
    Type: Application
    Filed: May 22, 2002
    Publication date: December 12, 2002
    Inventors: Yoshihiro Izumi, Yoshimasa Chikama, Satoshi Kawashima, Takaharu Hashimoto, Itsuji Yoshikawa, Masaaki Ishikawa
  • Controlled composite deposition method
    Patent number: 5266181
    Abstract: A composite deposit in which insoluble particles are co-deposited and dispersed in a metal matrix is formed on an article by dipping the article in a metal plating solution having insoluble particles dispersed therein and effecting an electroplating or chemical plating process. By adjusting the specific surface area of insoluble particles to be dispersed in the metal plating solution, the amount of insoluble particles co-deposited in the composite deposit can be controlled. Better results are obtained with insoluble particles having a specific surface area of 10 m.sup.2 /g or less.
    Type: Grant
    Filed: November 5, 1992
    Date of Patent: November 30, 1993
    Assignees: C. Uyemura & Co., Ltd., Osaka Cement Co., Ltd.
    Inventors: Sowjun Matsumura, Tadashi Chiba, Yoshiko Hotta, Itsuji Yoshikawa