Patents by Inventor Ivars Melngailis

Ivars Melngailis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5185758
    Abstract: Apparatus and method for scaling solid-state devices to higher power using multiple sources each of which are separately collimated, followed by focusing of the pump radiation into gain medium colinear to laser mode using a moderated focus. A modularized system is also described.
    Type: Grant
    Filed: January 7, 1992
    Date of Patent: February 9, 1993
    Assignee: Massachusetts Institute of Technology
    Inventors: Tso Y. Fan, Antonio Sanchez-Rubio, James N. Walpole, Richard C. Williamson, Ivars Melngailis, James R. Leger, William C. Goltsos
  • Patent number: 5081637
    Abstract: Apparatus and method for scaling solid-state devices to higher power using multiple sources each of which are separately collimated, followed by focusing of the pump radiation into gain medium colinear to laser mode using a moderated focus. A modularized system is also described.
    Type: Grant
    Filed: November 28, 1989
    Date of Patent: January 14, 1992
    Assignee: Massachusetts Institute of Technology
    Inventors: Tso Y. Fan, Antonio Sanchez-Rubio, James N. Walpole, Richard C. Williamson, Ivars Melngailis, James R. Leger, William C. Goltsos
  • Patent number: 4518219
    Abstract: A three-dimensional optical waveguide is disclosed. This waveguide comprises a single crystal semiconductor layer grown upon an insulator which has an index of refraction lower than the semiconductor. The semiconductor layer has a thickness which provides confinement of light propagating in the semiconductor layer in the vertical direction. An effective larger index of refraction over a cross-sectional region of the semiconductor layer provides confinement of light in the lateral direction. This lateral confinement is achieved by side walls in the semiconductor layer which extend toward, but fall short of, the insulator layer.
    Type: Grant
    Filed: February 3, 1983
    Date of Patent: May 21, 1985
    Assignee: Massachusetts Institute of Technology
    Inventors: Frederick J. Leonberger, Ivars Melngailis, Carl O. Bozler, Robert W. McClelland
  • Patent number: 4420873
    Abstract: A method for fabricating three-dimensional optical waveguides is disclosed. In this method, a single crystal semiconductor layer is grown upon an insulator which has an index of refraction lower than the semiconductor. The semiconductor layer is deposited to a thickness which provides confinement of light propagating in the semiconductor layer in the vertical direction. An effective larger index of refraction over a cross-sectional region of the semiconductor layer is then formed to provide confinement of light in the lateral direction. In the preferred method, the growth of single crystal semiconductor upon the insulator is achieved by a vapor-phase lateral epitaxial overgrowth technique.Devices fabricated according to the method are also disclosed.
    Type: Grant
    Filed: January 25, 1980
    Date of Patent: December 20, 1983
    Assignee: Massachusetts Institute of Technology
    Inventors: Frederick J. Leonberger, Ivars Melngailis, Carl O. Bozler, Robert W. McClelland