Abstract: A machine for manufacturing semiconductor devices has a processing chamber for processing the semiconductor wafer. A transfer chamber has at least two positions, one position to facilitate the transfer of a wafer to be processed into the transfer chamber and to facilitate the transfer of a processed wafer from the transfer chamber to the cassette from which the wafer originated. The second position facilitates the transfer of a wafer to and from the processing chamber. A transfer arm simultaneously transfers an unprocessed wafer from the first position to the second position with the transfer of a processed wafer from the second position to the first position.

Abstract: A machine for manufacturing semiconductor devices has a processing chamber for processing the semiconductor wafer. A transfer chamber has at least two positions, one position to facilitate the transfer of a wafer to be processed into the transfer chamber and to facilitate the transfer of a processed wafer from the transfer chamber to the cassette from which the wafer originated. The second position facilitates the transfer of a wafer to and from the processing chamber. A transfer arm simultaneously transfers an unprocessed wafer from the first position to the second position with the transfer of a processed wafer from the second position to the first position.

Abstract: Sputtering target lifetime is enhanced by providing a sputtering target assembly wherein a sputtering target is mounted to a substantially compliant cooling cover plate. The cooling cover plate is preferably fabricated from a plastic, a polymer, or a composite polymer and is provided with a plurality of grooves which form cooling fluid passages when the sputtering target is mounted to the cooling cover plate. These cooling fluid passages may be used to cool the target during sputtering. Because the cooling cover plate is substantially compliant, the sputtering target is free to bow in order to relieve any thermally induced strain produced within the sputtering target during sputtering. The lifetime of the sputtering target is thereby enhanced as both strain induced defect propagation/migration within the sputtering target, and the likelihood of sputtering target/cooling cover plate delamination are reduced.

Abstract: A machine for manufacturing semiconductor devices has a processing chamber for processing the semiconductor wafer. A transfer chamber has at least two positions, one position to facilitate the transfer of a wafer to be processed into the transfer chamber and to facilitate the transfer of a processed wafer from the transfer chamber to the cassette from which the wafer originated. The second position facilitates the transfer of a wafer to and from the processing chamber. A transfer arm simultaneously transfers an unprocessed wafer from the first position to the second position with the transfer of a processed wafer from the second position to the first position.

Abstract: A method and apparatus for generating a plasma by inductively coupling electromagnetic energy into the plasma. In one embodiment, first and second antenna coils are disposed about the circumference of the plasma containment area. The first and second antenna coils are relatively spaced along the longitudinal axis of the plasma containment area. A current is generated in the first and second antenna coils. A phase shift regulating network establishes a difference between the phase of the current in the first antenna and the phase of the current in the second antenna. The phase difference corresponds to the phase difference required to launch a helicon wave in the plasma. In a second embodiment, a chamber shield is made of a conductive material and is coupled to the RF source such that the shield functions as an RF antenna. The shield may be coupled in series to a coil surrounding the shield to increase the resultant flux density.

Abstract: A method and apparatus for generating a plasma by inductively coupling electromagnetic energy into the plasma. In one embodiment, first and second antenna coils are disposed about the circumference of the plasma containment area. The first and second antenna coils are relatively spaced along the longitudinal axis of the plasma containment area. A current is generated in the first and second antenna coils. A phase shift regulating network establishes a difference between the phase of the current in the first antenna and the phase of the current in the second antenna. The phase difference corresponds to the phase difference required to launch a helicon wave in the plasma. In a second embodiment, a chamber shield is made of a conductive material and is coupled to the RF source such that the shield functions as an RF antenna. The shield may be coupled in series to a coil surrounding the shield to increase the resultant flux density.

Abstract: A machine for manufacturing semiconductor devices has a. processing chamber for processing the semiconductor wafer. A transfer chamber has at least two positions, one position to facilitate the transfer of a wafer to be processed into the transfer chamber and to facilitate the transfer of a processed wafer from the transfer chamber to the cassette from which the wafer originated. The second position facilitates the transfer of a wafer to and from the processing chamber. A transfer arm simultaneously transfers an unprocessed wafer from the first position to the second position with the transfer of a processed wafer from the second position to the first position.

Abstract: A multi-beam source for deposition of a material on to a substrate with enhanced deposition rate, uniformity and beam directionality. A plurality of orifices are provided in a head unit having a cavity containing a vapor of the deposition material. The cavity and the vapor contained therein are maintained at a high temperature to increase the deposition rate. The orifices are maintained at the same high temperature and act as heated collimators to produce highly directional beams for deposition of materials into high aspect ratio features. When used in jet vapor deposition techniques, an inert gas flow is introduced into the cavity and forced out thereof through the orifices as jets to transport particles of the deposition material to the substrate.

Abstract: A pressure-induced shut-off valve for a liquid delivery system with a back pressure regulator having a positive shut-off capability is provided. The pressure-induced shut-off valve may incorporate an integrated purge valve or an integrated cross flow nebulizer/vaporizer. The pressure-induced shut-off valve functions as a variable flow restrictor which automatically adjusts itself to provide a constant back pressure in the liquid line.

Abstract: In a thin film process system, an anti-contamination device, anti-flake shield or collimator plate, is fit to a process chamber. By maintaining a temperature differential between the chamber body and the device, or between the device and any adapter used to conform the device to the chamber apparatus, the device expands to maintain a substantially sealing press fit to the chamber body. The temperature differential can be maintained even when the process is finished until it is time to remove the device for cleaning or disposal and replacement.

Abstract: In a thin film process system, an anti-contamination device, anti-flake shield or collimator plate, is fit to a process chamber. By maintaining a temperature differential between the chamber body and the device, or between the device and any adapter used to conform the device to the chamber apparatus, the device expands to maintain a substantially sealing press fit to the chamber body. The temperature differential can be maintained even when the process is finished until it is time to remove the device for cleaning or disposal and replacement.

Abstract: A method of precleaning a wafer including the steps of placing the wafer in a plasma chamber; flowing a gas into the plasma chamber; establishing a plasma in the chamber at a first pressure; after establishing the plasma, plasma etching the wafer at the first pressure for a first period of time; transitioning to a second pressure that is different from the first pressure; plasma etching the wafer at the second pressure for a second period of time; and after the second period of time has elapsed, discontinuing plasma etching at the second pressure.

Abstract: A plasma deposition system for sputter depositing material from a target onto a wafer, the system including a vacuum chamber; a platform for holding the wafer during plasma processing; a source onto which the target is mounted and for generating a plasma in the chamber during operation; an equipotential conductive plane dividing the chamber into an upper cavity in which the target is located and a lower cavity in which the wafer is located, the equipotential conductive plane permitting material sputtered from the target to pass therethrough; and an upper antenna located inside the upper cavity and surrounding the plasma, the upper antenna for coupling RF power into the source-generated plasma.

Abstract: In a thin film process system, an anti-contamination device, anti-flake shield or collimator plate, is fit to a process chamber. By maintaining a temperature differential between the chamber body and the device, or between the device and any adapter used to conform the device to the chamber apparatus, the device expands to maintain a substantially sealing press fit to the chamber body. The temperature differential can be maintained even when the process is finished until it is time to remove the device for cleaning or disposal and replacement.