Abstract: The main object of the invention is to obtain LiMnPO4 having an excellent crystalline and a high purity at a lower temperature. The present invention provides a method for manufacturing LiMnPO4 including the steps of: precipitating for obtaining precipitate of manganese hydroxide (Mn(OH)x) by adding a precipitant to a Mn source solution in which a Mn source is dissolved; reducing for obtaining a reduced dispersion solution by dispersing the precipitate in a reducing solvent; adding for obtaining an added dispersion solution by adding a Li source solution and a P source solution to the reduced dispersion solution; pH adjusting for adjusting the pH of the added dispersion solution in the range of 3 to 6 to obtain a pH-adjusted dispersion solution; and synthesizing for synthesizing by reacting the pH-controlled dispersion solution by a heating under pressure condition.

Abstract: The main object of the invention is to obtain LiMnPO4 having an excellent crystalline and a high purity at a lower temperature. The present invention provides a method for manufacturing LiMnPO4 including the steps of: precipitating for obtaining precipitate of manganese hydroxide (Mn(OH)x) by adding a precipitant to a Mn source solution in which a Mn source is dissolved; reducing for obtaining a reduced dispersion solution by dispersing the precipitate in a reducing solvent; adding for obtaining an added dispersion solution by adding a Li source solution and a P source solution to the reduced dispersion solution; pH adjusting for adjusting the pH of the added dispersion solution in the range of 3 to 6 to obtain a pH-adjusted dispersion solution; and synthesizing for synthesizing by reacting the pH-controlled dispersion solution by a heating under pressure condition.

Abstract: The present invention provides an impurity measuring method comprising the steps of dropping a drop of a first solution on the surface of a substrate to be measured, moving the drop dropped on the surface of the substrate so that the drop is kept in contact with the surface and collects an impurity absorbed on the surface, recovering the drop after the movement and analyzing the recovered drop by chemical analysis to determine the type and concentration of the impurity, characterized in that the first solution is phobic to the substrate and the substrate consists substantially of Ge. The method is of particular importance for measuring metallic contamination on the surface of Ge substrates.

Abstract: This invention relates to a method for removing oxides from the surface of a Ge semiconductor substrate comprising the step of subjecting the surface to a Ge oxide etching solution characterized in that the Ge oxide etching solution removes Ge oxides and Ge sub-oxides from the surface.

Abstract: This invention relates to a method for removing oxides from the surface of a Ge semiconductor substrate comprising the step of subjecting the surface to a Ge oxide etching solution characterized in that the Ge oxide etching solution removes Ge oxides and Ge sub-oxides from the surface.

Abstract: The present invention provides an impurity measuring method comprising the steps of dropping a drop of a first solution on the surface of a substrate to be measured, moving the drop dropped on the surface of the substrate so that the drop is kept in contact with the surface and collects an impurity absorbed on the surface, recovering the drop after the movement and analyzing the recovered drop by chemical analysis to determine the type and concentration of the impurity, characterized in that the first solution is phobic to the substrate and the substrate consists substantially of Ge. The method is of particular importance for measuring metallic contamination on the surface of Ge substrates.

Abstract: The invention is related to a method of plating of a metal layer on a substrate. The method is particularly preferred for the formation of metallization structures for integrated circuits.

Abstract: The invention is related to a method of plating of a metal layer on a substrate. The method is particularly preferred for the formation of metallization structures for integrated circuits.