Abstract: A child resistant carton assembly includes a carton including a body panel. A locking panel is spaced apart from the body panel. The locking panel and the body panel define a locking chamber therebetween. A tray is slidably mounted in the carton. The tray includes a locking tab adapted to releasably engage the locking panel such that at least an insert portion of the locking tab is disposed in the locking chamber. A method is provided for using a child resistant carton including a carton and a tray slidably mounted in the carton. The carton includes a body panel and a locking panel spaced apart from one another and defining a locking chamber therebetween. The tray includes a locking tab. The method includes inserting at least an insert portion of the locking tab into the locking chamber to resist withdrawal of the tray from the carton, and displacing the locking tab from the locking chamber to release the tray.

Abstract: A child resistant carton assembly includes a carton including a body panel. A locking panel is spaced apart from the body panel. The locking panel and the body panel define a locking chamber therebetween. A tray is slidably mounted in the carton. The tray includes a locking tab adapted to releasably engage the locking panel such that at least an insert portion of the locking tab is disposed in the locking chamber. A method is provided for using a child resistant carton including a carton and a tray slidably mounted in the carton. The carton includes a body panel and a locking panel spaced apart from one another and defining a locking chamber therebetween. The tray includes a locking tab. The method includes inserting at least an insert portion of the locking tab into the locking chamber to resist withdrawal of the tray from the carton, and displacing the locking tab from the locking chamber to release the tray.

Abstract: A process for integrating the fabrication of an N type, junction field effect transistor (NJFET), device, with the fabrication and a high voltage, P channel metal oxide semiconductor (PMOS), device, has been developed. The process includes the formation of a deep N well region for accommodation of the high voltage, PMOS device, while a shallow N well region is used to contain the NJFET device. Featured in the integrated fabrication sequence is the simultaneous formation of P type source/drain regions for the high voltage PMOS device, and the P type gate structure of the NJFET device.

Abstract: A child resistant carton assembly includes a carton including a body panel. A locking panel is spaced apart from the body panel. The locking panel and the body panel define a locking chamber therebetween. A tray is slidably mounted in the carton. The tray includes a locking tab adapted to releasably engage the locking panel such that at least an insert portion of the locking tab is disposed in the locking chamber. A method is provided for using a child resistant carton including a carton and a tray slidably mounted in the carton. The carton includes a body panel and a locking panel spaced apart from one another and defining a locking chamber therebetween. The tray includes a locking tab. The method includes inserting at least an insert portion of the locking tab into the locking chamber to resist withdrawal of the tray from the carton, and displacing the locking tab from the locking chamber to release the tray.

Abstract: A method is disclosed for leaching finely divided lead sulphide bearing material to convert contained lead values to soluble lead acetate with concurrent conversion of sulphur values associated with the lead sulphide to an elemental state. The method involves forming a slurry consisting of the material dispersed in an aqueous medium containing free acetate ions and having a pH below 5.1. The slurry is reacted at a temperature of 60.degree. to 120.degree.C. with a free oxygen-bearing gas under a partial pressure of oxygen of 20 to 60 p.s.i. in order to convert lead sulphide to soluble lead acetate with concurrent production of insoluble elemental sulphur.