Abstract: In an electric charge transfer apparatus, first capacitance elements have the one end grounded and the other end connected to a first main electrode of a field effect transistor. Second capacitance elements have the one end grounded and the other end connected to a second main electrode of the field effect transistor. Third capacitance elements have the one end connected to the second main electrode of the field effect transistor and the other end connected to a transfer auxiliary pulse application terminal. Switch element have the one end connected to the second main electrode of the field effect transistor and the other end connected to a voltage source. A transfer pulse application terminal is connected to a control electrode of the field effect transistor.

Abstract: A solid state image sensing device comprising a matrix-disposed photoelectric diodes 27+21, 27+21, . . . . on a monolithic substrate, wherein each one transferring switching means 24, . . . . and each one noise eliminating MOS switch 26, . . . . are provided for each vertical column of said matrix-disposed photoelectric transducing element, and the transferring switches 24, . . . . twice transfers information on a connecting line 22 of each column to a node point N.sub.ST during each horizontal fly-back period, so that the first one of said twice transferring transfers noise signal to the node points N.sub.ST for throwing it away, and the second one of said transferring transfers genuine light information of the photodiode 27, . . . to the node points N.sub.ST, . . . . for outputting the light information, whereby noises such as spurious noise, fixed pattern noise and blooming are eliminated and also scanning speed is improved.