Abstract: To be able to realize a relatively wide magnetron sputter cathode, it is proposed that on the vacuum side of a carrier (2) is disposed the sputter target (4) with a backing plate (3), which maintains a gap (14) from the carrier (2). The backing plate (3) is developed as a cooling plate. In it are located cooling means channels (15), which, via an inlet (16) through the carrier (2), are supplied with cooling fluid, which can flow out again via an outlet (17) through the carrier (2). On the atmospheric side is located a magnet configuration (5).

Abstract: The present invention refers to a coating device for coating of substrates comprising at least two process chambers (1, 2, 3, 4) being disposed adjacent to each other, a separating plate (9) between the two adjacent process chambers, and pumping means (12, 13) for evacuating the process chambers, wherein the separating plate (9) comprises a conduit having at least two ends, one end of which is connected with the pumping means and the other end has at least one suction opening for at least one of the process chambers.

Abstract: The present invention refers to a coating device for coating of substrates comprising at least two process chambers (1, 2, 3, 4) being disposed adjacent to each other, a separating plate (9) between the two adjacent process chambers, and pumping means (12, 13) for evacuating the process chambers, wherein the separating plate (9) comprises a conduit having at least two ends, one end of which is connected with the pumping means and the other end has at least one suction opening for at least one of the process chambers.

Abstract: The present invention refers to a coating device for coating of substrates comprising at least two process chambers (1, 2, 3, 4) being disposed adjacent to each other, a separating plate (9) between the two adjacent process chambers, and pumping means (12, 13) for evacuating the process chambers, wherein the separating plate (9) comprises a conduit having at least two ends, one end of which is connected with the pumping means and the other end has at least one suction opening for at least one of the process chambers.

Abstract: The present disclosure relates to a method for producing an indium-tin-oxide layer, comprising: providing a substrate to be coated in a sputtering chamber; providing a rotatable non-bonded target around a backing tube for coating the substrate in the sputtering chamber; and sputtering the material from the target in an atmosphere containing an O2/H2 mixture. Further the present disclosure relates to a sputtering system comprising a sputtering chamber having at least one gas inlet and being adapted for at least one backing tube for a non-bonded rotatable target, a control device adapted to control the flow through the gas inlet, wherein the control device is adapted to control the at least one gas inlet such that a coating on a substrate using a sputtering process is performed in an atmosphere containing an O2 /H2 mixture in the sputtering chamber for forming an indium-tin-oxide layer.

Abstract: A machine for coating a transparent substrate for the production of display screens comprises a coating chamber that has a modular design. Each of the modules 1 features a chamber section 2, a first support 3 that is arranged removably in or at the chamber section 2, and a second support 4 that is arranged removably at the first support 3. Whereas the first support 3 bears the cathodes, the second support 4 is formed as a cover at which are arranged the pumps for producing a vacuum in the coating chamber. Carriers 3 and 4 can be removed laterally from the chamber section 2 to such an extent that areas 11a, 11b accessible to persons can be formed between the module components. In this way, the components of the machine are readily accessible, for example for maintenance purposes. Work can be done simultaneously on the cathodes and in the chamber interior.

Abstract: Claimed is a sputtering target system comprising a plurality of backing plates to be individually cooled. Each backing plate is provided on its back side with a meandering groove that is closed off by a sealing plate. The sealing plate is welded around its circumference to the backing plate and at the same time is welded to at least one ridge located at a distance from the frame, which separates two grooved sections from one another. The sealing plate thus welded to the backing plate not only closes off the grooves to form a cooling channel, but also is used for reinforcement of the otherwise relatively flat backing plate.

Abstract: A target backing tube is described. The target backing tube is for a rotatable target and includes a tube adapted for one or more non-bonded target cylinders to be disposed around the tube, the tube having an exterior surface adapted to face the at least one target cylinder and at least three or more protrusion receiving positions; and protrusions mounted on the exterior surface of the tube at each of the protrusion receiving positions for centering the target cylinders.

Abstract: The present application concerns a target backing tube for a rotatable cylindrical target assembly comprising: a tube for at least one target element to be disposed there around, wherein the tube has an exterior surface adapted to be directed to the at least one target element; and a thermal reflection cover covering a portion of at least 20% of the exterior surface of the tube. Further, the present application concerns a rotatable cylindrical target assembly comprising: said target backing tube and at least one target element disposed around the target backing tube, wherein the thermal reflection cover disposed between the target backing tube and the at least one target element.

Abstract: The application concerns a target backing tube for a rotatable cylindrical target assembly comprising: a tube for at least one target element to be disposed there around, wherein the tube has an exterior surface adapted to face the at least one target element, wherein a portion of the exterior surface of the tube has a mean emissivity of 0.7 to 1, wherein the portion is at least 50% of the exterior surface of the tube. Further, the application concerns a cooling shield for a sputtering system comprising a rotatable target, the cooling shield has an interior surface adapted to face a target element of a sputtering system and an exterior surface; wherein a portion of the interior surface of the cooling shield has a mean emissivity of 0.7 to 1, wherein the portion is at least 50% of the interior surface of the cooling shield.

Abstract: A particle beam impurity removing device for removing impurities from a particle beam emitted in a beam direction is provided, including an emission angle confinement means adapted to confine emission angles of particles included in the particle beam.

Abstract: A charged particle beam PVD device is provided, including a target of coating material inside of a casing, a vapor aperture provided in the casing, and a shielding device provided adjacent to the vapor aperture, the shielding device being on floating potential.

Abstract: The present invention refers to a coating device for coating of substrates comprising at least two process chambers (1, 2, 3, 4) being disposed adjacent to each other, a separating plate (9) between the two adjacent process chambers, and pumping means (12, 13) for evacuating the process chambers, wherein the separating plate (9) comprises a conduit having at least two ends, one end of which is connected with the pumping means and the other end has at least one suction opening for at least one of the process chambers.

Abstract: A magnetron sputter source for a sputter-coating installation includes a cathode and a target assigned to the cathode or formed as the cathode. The target provides coating and/or treatment material for the coating and/or treatment of a substrate. Furthermore, the magnetron sputtering source has means for generating a coating plasma and a magnet arrangement for generating a magnetic field for the purpose of influencing the coating plasma such that a plasma channel is generated above a partial section of a surface of the target. The magnet arrangement and the surface of the target are arranged such that they can be moved relative to each other, and the plasma channel is traversable above the surface of the target. The magnetron sputtering source is adjustable such that, when the plasma channel moves over the surface of the target, a duration of exposure of the surface to the plasma is reduced by an increase in a relative velocity (v, v+u) between the magnet arrangement and the target.

Abstract: The present invention concerns a device and a method for coating substrates by means of sputtering a coating material in the form of a target, wherein the target is cooled during sputtering by means of a cooling medium fed at the target or past the region of the target or through the target, and the cooling medium has a feed temperature of less than 20° C.

Abstract: In a sputtering device with magnetic amplification, a magnetic field is generated by means of a permanent magnet system, whose lines of force run above and penetrate the sputtering surface, whereby the permanent magnet system is formed of two dosed, coaxial circular or oval rows (7, 8) of individual magnets (5, 5′ . . . , 6, 6′ . . . ) that are connected via a yoke (15), whereby the surface of the target (3) that faces away from the rows of permanent magnets (7, 8) is formed of two partial surfaces (3a, 3b) that form an angle to each other and whereby the edge (3c) that is formed by the two partial surfaces (3a, 3b) runs parallel to the two rows (7, 8) of permanent magnets (5, 5′ . . , 6, 6′ . . . ) and whereby an insert (14) made of ferromagnetic material is inserted between the magnetic yoke (15) and the surface of the target (3) that faces the magnetic yoke (15).

Abstract: An apparatus is disclosed for the coating of substrates (10) with thin films, having a vacuum chamber (1), a target (6) to be atomized, situated opposite the substrate (10) in the vacuum chamber (1), with magnets (19, 19′, 19″; 20, 20′, 20″) to produce a magnetic tunnel in front of the area of the target (6) to be atomized, an inlet (8) for a process gas into the process space (11), an anode (12), which is electrically insulated with respect to the vacuum chamber (1), and a current-voltage supply to produce a plasma in front of the target (6). The target (6) is shaped as a rotation-symmetrical body, which provides a ring-shaped enclosure around the substrate (10), wherein the magnets (19,19′, . . . ; 20,20′, . . . ) are supported on the side of the hollow cylindrical target (6), facing away from the substrate (10), and can move around the rotational axis (R) of the target (6).

Abstract: A sputtering cathode with a flat plate-shaped target (8) and a tub-shaped yoke (3) arranged behind the target (8), with center ridge (5) and with magnets (7,7′) for generating an enclosed tunnel of arc-shaped curved field lines (15,15′) in front of the target surface, as well as with three sheet metal cutouts (9,10,11) or groups of partial cutouts inserted into the plane between the target (8) and the end faces (12) of the tub rim of the yoke (3) facing the target (8), all the sheet metal cutouts (9,10,11) together form two gaps (a,b) extending roughly parallel to the end faces (12,13), wherein the magnets (7,7′) are each incorporated or inserted into the yoke bottom and the side surfaces of the magnets (7,7′) facing towards and away from the target (8) run flush with the yoke bottom.