Patents by Inventor J. Richard Shealy

J. Richard Shealy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High throughput OMPVE apparatus
    Patent number: 6332928
    Abstract: A cold wall reactor having inner and outer walls defining an annular reactor cell. A susceptor is rotatably mounted in the cell, and received wafers to be treated by gases flowing axially through the cell. The outer wall of the reactor is normally cooled, but is heated by a suitable furnace to provide a hot wall reactor when cleaning of the cell is required.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: December 25, 2001
    Assignee: Cornell Research Foundation, Inc.
    Inventors: J. Richard Shealy, Barry P. Butterfield
  • High throughput OMVPE apparatus
    Publication number: 20010006043
    Abstract: A cold wall reactor having inner and outer walls defining an annular reactor cell. A susceptor is rotatably mounted in the cell, and received wafers to be treated by gases flowing axially through the cell. The outer wall of the reactor is normally cooled, but is heated by a suitable furnace to provide a hot wall reactor when cleaning of the cell is required.
    Type: Application
    Filed: December 21, 2000
    Publication date: July 5, 2001
    Inventors: J. Richard Shealy, Barry P. Butterfield
  • High throughput OMVPE apparatus
    Patent number: 6217937
    Abstract: A cold wall reactor having inner and outer walls defining an annular reactor cell. A susceptor is rotatably mounted in the cell, and received wafers to be treated by gases flowing axially through the cell. The outer wall of the reactor is normally cooled, but is heated by a suitable furnace to provide a hot wall reactor when cleaning of the cell is required.
    Type: Grant
    Filed: July 15, 1998
    Date of Patent: April 17, 2001
    Assignee: Cornell Research Foundation, Inc.
    Inventor: J. Richard Shealy
  • Light-emitting, nanometer scale, micromachined silicon tips
    Patent number: 5949182
    Abstract: 0504221609 Nanometer-scale field emitter tips are fabricated on a single crystal silicon substrate and an optically active semiconductive material is deposited on the tip. A bias voltage is connected between the semiconductor and the substrate to cause the optically active material to emit light.
    Type: Grant
    Filed: June 3, 1996
    Date of Patent: September 7, 1999
    Assignee: Cornell Research Foundation, Inc.
    Inventors: J. Richard Shealy, Noel C. MacDonald