Patents by Inventor Jaakko Niinist?

Jaakko Niinist? has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of depositing rare earth oxide thin films
    Patent number: 6858546
    Abstract: The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds of rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.
    Type: Grant
    Filed: February 4, 2002
    Date of Patent: February 22, 2005
    Assignee: ASM International, NV
    Inventors: Jaakko Niinistō, Matti Putkonen, Mikko Ritala, Petri Räisänen, Antti Niskanen, Markku Leskelä