Patents by Inventor Jabez McClelland

Jabez McClelland has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220390760
    Abstract: An apparatus for light delivery to magneto-optical trap (MOT) system utilizes only planar optical diffraction devices including a planar-integrated-circuit PIC and a metasurface MS. When MOT is based on the use of a diffraction grating, a grating chip is additionally employed to launch and manipulate light for laser cooling. Bridging the gap between the sub-micrometer-scale guided mode on the PIC and the centimeter-scale beam needed for laser cooling, a magnification of the mode area by about 1010 is demonstrated using an on-chip extreme-mode-converter to launch a Gaussian mode into free space from a PIC-waveguide and a beam-shaping, polarization-dependent MS to form a diverging laser beam with a flat-top spatial profile, which efficiently illuminates the grating chip without loss of light.
    Type: Application
    Filed: June 2, 2022
    Publication date: December 8, 2022
    Inventors: William R. MCGEHEE, Jabez MCCLELLAND, Vladimir AKSYUK, Wenqi ZHU, Amit Kumar AGRAWAL
  • Patent number: 9530606
    Abstract: An articles includes: an ion source configured to provide a first ion beam that has a first brightness; and a cooler configured to receive the first ion beam and to produce a second ion beam from the first ion beam, the second ion beam including a second brightness that is greater than the first brightness.
    Type: Grant
    Filed: March 24, 2015
    Date of Patent: December 27, 2016
    Assignee: THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE
    Inventors: Jabez McClelland, Truman Wilson
  • Publication number: 20150194285
    Abstract: An articles includes: an ion source configured to provide a first ion beam that has a first brightness; and a cooler configured to receive the first ion beam and to produce a second ion beam from the first ion beam, the second ion beam including a second brightness that is greater than the first brightness.
    Type: Application
    Filed: March 24, 2015
    Publication date: July 9, 2015
    Inventors: Jabez McClelland, Truman Wilson
  • Publication number: 20130320202
    Abstract: A method for aligning the axis of an atom beam with the orientation of an electric field at a particular location within an enclosure for use in creating a charged particle source by photoionizing a cold atom beam. The method includes providing an atom beam in the enclosure, providing a plurality of electrically conductive devices in said enclosure, evacuating the enclosure to a pressure below about 10?6 millibar, and aligning the axis of the atom beam with the orientation of the electric field, relative to each other, within less than about two degrees. Alignment may be facilitated by applying at least one voltage to the electrically conductive devices, mechanically tilting the atom beam's axis orientation of the electric field relative to each other and/or causing a deflection of the atom beam.
    Type: Application
    Filed: August 8, 2013
    Publication date: December 5, 2013
    Applicant: United States of America, as represented by the Secretary of Commerce, NIST
    Inventors: Jabez McClelland, Brenton Knuffman, Adam Steele
  • Patent number: 8314404
    Abstract: An ion beam system uses a separate accelerating electrode, such as a resistive tube, to accelerate the ions while maintaining a low electric field at an extended, that is, distributed ion source, thereby improving resolution. A magneto-optical trap can be used as the ion source.
    Type: Grant
    Filed: September 20, 2010
    Date of Patent: November 20, 2012
    Assignees: FEI Company, The United States of America as represented by the Secretary of Commerce, The National Institute of Standards and Technology
    Inventors: Jabez McClelland, Brenton J. Knuffman, Adam V. Steele, Jonathan H. Orloff
  • Patent number: 5851725
    Abstract: A lithography process which utilizes metastable atoms for resist exposure is disclosed. Metastable rare gas atoms, instead of photons, electrons or ions, are directed at the surface of a lithographic resist. On impact, the metastable atoms release up to 20 eV of energy per atom in the form of secondary electrons. These secondary electrons alter chemical bonds in the resist, causing it to become either soluble or insoluble in an appropriate developer solution. The metastable rare gas atoms can further be manipulated with the new techniques of atom optics to focus them, improve their collimation and intensity, or modulate them.
    Type: Grant
    Filed: January 26, 1993
    Date of Patent: December 22, 1998
    Assignee: The United States of America as represented by the Secretary of Commerce
    Inventor: Jabez McClelland