Abstract: Method and system configured to reduce or even nullify the degradation of images created by the projector tool turns on the optimization of the pattern-imaging by adjusting parameters and hardware of the projector to judiciously impact the placement of various image edges at different locations in the image field. Adjustments to the projector (exposure tool) include a change of a setup parameter of the exposure tool and/or scanning synchronization and/or a change of a signature of the optical system of the exposure tool determined as a result of minimizing the pre-determined cost function(s) that are parts of a comprehensive edge-placement error model.

Abstract: Method and system configured to reduce or even nullify the degradation of images created by the projector tool turns on the optimization of the pattern-imaging by adjusting parameters and hardware of the projector to judiciously impact the placement of various image edges at different locations in the image field. Adjustments to the projector (exposure tool) include a change of a setup parameter of the exposure tool and/or scanning synchronization and/or a change of a signature of the optical system of the exposure tool determined as a result of minimizing the pre-determined cost function(s) that are parts of a comprehensive edge-placement error model.

Abstract: Method and system configured to reduce or even nullify the degradation of images created by the projector tool turns on the optimization of the pattern-imaging by adjusting parameters and hardware of the projector to judiciously impact the placement of various image edges at different locations in the image field. Adjustments to the projector (exposure tool) include a change of a setup parameter of the exposure tool and/or scanning synchronization and/or a change of a signature of the optical system of the exposure tool determined as a result of minimizing the pre-determined cost function(s) that are parts of a comprehensive edge-placement error model.

Abstract: Method and system configured to reduce or even nullify the degradation of images created by the projector tool turns on the optimization of the pattern-imaging by adjusting parameters and hardware of the projector to judiciously impact the placement of various image edges at different locations in the image field. Adjustments to the projector (exposure tool) include a change of a setup parameter of the exposure tool and/or scanning synchronization and/or a change of a signature of the optical system of the exposure tool determined as a result of minimizing the pre-determined cost function(s) that are parts of a comprehensive edge-placement error model.

Abstract: Method for minimization of degradation of images created by the projector tool turns on the optimization of the pattern-imaging by adjusting parameters and hardware of the projector to judiciously impact the placement of various image edges at different locations in the image field. Adjustments to the projector (exposure tool) include a change of a setup parameter of the exposure tool and/or scanning synchronization and/or a change of a signature of the optical system of the exposure tool determined as a result of minimizing the pre-determined cost function(s) that are parts of a comprehensive edge-placement error model.

Abstract: A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.

Abstract: Method for minimization of degradation of images created by the projector tool turns on the optimization of the pattern-imaging by adjusting parameters and hardware of the projector to judiciously impact the placement of various image edges at different locations in the image field. Adjustments to the projector (exposure tool) include a change of a setup parameter of the exposure tool and/or scanning synchronization and/or a change of a signature of the optical system of the exposure tool determined as a result of minimizing the pre-determined cost function(s) that are parts of a comprehensive edge-placement error model.

Abstract: A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.

Abstract: A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.

Abstract: A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.

Abstract: Methods and apparatus for enabling both isolated and dense patterns to be accurately patterned onto a wafer are disclosed. According to one aspect of the present invention, an illumination system that is suitable for use as a part of a projection tool includes an illumination source and an illuminator aperture. The illuminator aperture has a center point and an outer edge, and also includes a first pole and a second pole. The first pole is defined substantially about the center point, and the second pole is defined substantially between the first pole and the outer edge of the first pole. The illumination source is arranged to provide a beam to the illuminator aperture.

Abstract: Methods and apparatus for enabling both isolated and dense patterns to be accurately patterned onto a wafer are disclosed. According to one aspect of the present invention, an illumination system that is suitable for use as a part of a projection tool includes an illumination source and an illuminator aperture. The illuminator aperture has a center point and an outer edge, and also includes a first pole and a second pole. The first pole is defined substantially about the center point, and the second pole is defined substantially between the first pole and the outer edge of the first pole. The illumination source is arranged to provide a beam to the illuminator aperture.

Abstract: Methods and apparatus for enabling both isolated and dense patterns to be accurately patterned onto a wafer are disclosed. According to one aspect of the present invention, an illumination system that is suitable for use as a part of a projection tool includes an illumination source and an illuminator aperture. The illuminator aperture has a center point and an outer edge, and also includes a first pole and a second pole. The first pole is defined substantially about the center point, and the second pole is defined substantially between the first pole and the outer edge of the first pole. The illumination source is arranged to provide a beam to the illuminator aperture.