Patents by Inventor Jack Gang Qian

Jack Gang Qian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020008302
    Abstract: A polysilicon resistor is formed using a late implant process. Low dopant concentrations on the order of 6×1019 to 3.75×1020 have shown good results. with a reduced post anneal temperature. Both the first and second order temperature coefficients (TC1 and TC2) can then be adjusted. Using electrical trimming resistors can be produced with highly linear temperature characteristics. By varying the geometries of the resistors, low trimming threshold current densities and voltages can be used to produce good results.
    Type: Application
    Filed: September 26, 2001
    Publication date: January 24, 2002
    Applicant: Dallas Semiconductor Corporation
    Inventors: Varun Singh, Tanmay Kumar, Thomas E. Harrington, Roy Austin Hensley, Allan T. Mitchell, Jack Gang Qian
  • Patent number: 6306718
    Abstract: A polysilicon resistor is formed using a late implant process. Low dopant concentrations on the order of 6×1019 to 3.75×1020 have shown good results. with a reduced post anneal temperature. Both the first and second order temperature coefficients (TC1 and TC2) can then be adjusted. Using electrical trimming resistors can be produced with highly linear temperature characteristics. By varying the geometries of the resistors, low trimming threshold current densities and voltages can be used to produce good results.
    Type: Grant
    Filed: April 26, 2000
    Date of Patent: October 23, 2001
    Assignee: Dallas Semiconductor Corporation
    Inventors: Varun Singh, Tanmay Kumar, Thomas E. Harrington, III, Roy Austin Hensley, Allan T. Mitchell, Jack Gang Qian