Abstract: A memory array includes a memory segment having at least one memory bank. The at least one memory bank includes an array of memory cells, and wherein at least two first read tracking cells are disposed in a read tracking column of the at least one memory bank. The memory array further includes a read tracking circuit coupled to the at least two first read tracking cells. Outputs of the at least two first read tracking cells are connected to a tracking bit connection line (TBCL). A tracking circuit connected to the TBCL is configured to output a tracking-cells output signal to generate a global tracking result signal to a memory control circuitry. The memory control circuitry is configured to reset a memory clock based on the global tracking result signal.

Abstract: A memory array includes a memory segment having at least one memory bank. The at least one memory bank includes an array of memory cells, and wherein at least two first read tracking cells are disposed in a read tracking column of the at least one memory bank. The memory array further includes a read tracking circuit coupled to the at least two first read tracking cells. Outputs of the at least two first read tracking cells are connected to a tracking bit connection line (TBCL). A tracking circuit connected to the TBCL is configured to output a tracking-cells output signal to generate a global tracking result signal to a memory control circuitry. The memory control circuitry is configured to reset a memory clock based on the global tracking result signal.

Abstract: A read tracking system and method for advanced memory devices are provided. The read tracking system and method include tracking multiple tracking bit cells in multiple segments and columns to incorporate device performance variation of bit cells in the memory array. The tracking path mimics the worst-case read path with some built-in margins to sufficiently and efficiently cover the read times of bit cells in a memory array without unnecessarily sacrificing the read speed performance of the memory array. A number of tracking cells may be placed at different segments and both sides of the memory array to cover read time variation across memory array.

Abstract: A read tracking system and method for advanced memory devices are provided. The read tracking system and method include tracking multiple tracking bit cells in multiple segments and columns to incorporate device performance variation of bit cells in the memory array. The tracking path mimics the worst-case read path with some built-in margins to sufficiently and efficiently cover the read times of bit cells in a memory array without unnecessarily sacrificing the read speed performance of the memory array. A number of tracking cells may be placed at different segments and both sides of the memory array to cover read time variation across memory array.