Abstract: Embodiments improve software defect diagnosis. Analytic focus is automatically walked back from an initial symptomatic diagnostic context to a previous diagnostic context that is closer to underlying causes. Diagnosis may obtain diagnostic artifacts such as traces or dumps, extract diagnostic context, decompile executables, lookup likely causes based on symptoms, scan logs, and submit diagnostic context to software analysis services. An analysis service may perform static analysis, security testing, symptom-pair lookups, or antipattern scanning, for example, and may include a neural network or other machine learning model, for example. Root causes are culled from analysis results and identified to a software developer. Changes to mitigate the defect's impact are suggested in some cases. Thus, the software developer receives debugging leads without manually navigating through all the tool interfaces or unrelated details of diagnostic contexts.

Abstract: A method for processing signals from a touchscreen panel includes obtaining a partial frame by sampling parts of a frame from a touch panel which comprises an array of sensor areas (step S1). The method also includes generating, based on the partial frame, a new frame which comprises estimates of the un-sampled parts (step S2). The method also includes determining whether at least one touch event is present in the new frame (step S3), and upon a positive determination, for each touch event, determining a location of the touch event in the new frame and obtaining a sub-frame by sampling a region of a subsequent frame from the touch panel frame at and around the location (step S4). The method also includes outputting touch information based on one or more sub-frames (step S7).

Abstract: A method for processing signals from a touchscreen panel includes obtaining a partial frame by sampling parts of a frame from a touch panel which comprises an array of sensor areas (step S1). The method also includes generating, based on the partial frame, a new frame which comprises estimates of the un-sampled parts (step S2). The method also includes determining whether at least one touch event is present in the new frame (step S3), and upon a positive determination, for each touch event, determining a location of the touch event in the new frame and obtaining a sub-frame by sampling a region of a subsequent frame from the touch panel frame at and around the location (step S4). The method also includes outputting touch information based on one or more sub-frames (step S7).

Abstract: A method for processing signals from a touchscreen panel includes obtaining a partial frame by sampling parts of a frame from a touch panel which comprises an array of sensor areas (step S1). The method also includes generating, based on the partial frame, a new frame which comprises estimates of the un-sampled parts (step S2). The method also includes determining whether at least one touch event is present in the new frame (step S3), and upon a positive determination, for each touch event, determining a location of the touch event in the new frame and obtaining a sub-frame by sampling a region of a subsequent frame from the touch panel frame at and around the location (step S4). The method also includes outputting touch information based on one or more sub-frames (step S7).

Abstract: A method for processing signals from a touchscreen panel includes obtaining a partial frame by sampling parts of a frame from a touch panel which comprises an array of sensor areas (step S1). The method also includes generating, based on the partial frame, a new frame which comprises estimates of the un-sampled parts (step S2). The method also includes determining whether at least one touch event is present in the new frame (step S3), and upon a positive determination, for each touch event, determining a location of the touch event in the new frame and obtaining a sub-frame by sampling a region of a subsequent frame from the touch panel frame at and around the location (step S4). The method also includes outputting touch information based on one or more sub-frames (step S7).

Abstract: A method of fabricating an imaging array includes providing a single crystal silicon substrate and bonding the single crystal silicon substrate to an insulating substrate. One or more portions of an exposed surface of the single-crystal silicon substrate are removed to form a pattern of first areas having a first height measured from the insulating substrate and second areas having a second height measured from the insulating substrate. Photosensitive elements are formed on the first areas and readout elements are formed on the second areas. The single-crystal silicon substrate is treated by hydrogen implantation to form an internal separation boundary and a portion of the single-crystal silicon substrate is removed at the internal separation boundary to form the exposed surface.

Abstract: Method of manufacturing imaging arrays can include providing a silicon tile having a first surface and a second, opposite surface. A buried dielectric layer is formed in the silicon tile between the first and second surfaces to define a bottom silicon layer between the first surface and the dielectric layer. A separation boundary is formed in the silicon tile between the second surface and the dielectric layer to define a top silicon layer between the dielectric layer and the separation boundary and a removable silicon layer between the separation boundary and the second surface. An oxide layer formed on the first surface of the silicon tile and the silicon tile is bonded to a glass substrate at the oxide layer. The silicon tile is separated at the separation boundary to remove the removable silicon layer, exposing the top silicon layer. Semiconductive elements are formed using the exposed top silicon layer.

Abstract: A method of manufacturing an imaging array includes providing a silicon tile having a first surface and a second, opposite surface. A buried dielectric layer is formed in the silicon tile between the first and second surfaces to define a bottom silicon layer between the first surface and the dielectric layer. A separation boundary is formed in the silicon tile between the second surface and the dielectric layer to define a top silicon layer between the dielectric layer and the separation boundary and a removable silicon layer between the separation boundary and the second surface. An oxide layer is formed on the first surface of the silicon tile and the silicon tile is bonded to a glass substrate at the oxide layer. The silicon tile is separated at the separation boundary to remove the removable silicon layer, exposing the top silicon layer. Semiconductive elements are formed using the exposed top silicon layer.

Abstract: A method of forming an imaging array includes providing a single crystal silicon substrate having an internal separation layer, forming a patterned conductive layer proximate a first side of the single crystal silicon substrate, forming an electrically conductive layer on the first side of the single crystal silicon substrate and in communication with the patterned conductive layer, securing the single crystal silicon substrate having the patterned conductive layer and electrically conductive layer formed thereon to a glass substrate with the first side of the single crystal silicon substrate proximate the glass substrate, separating the single crystal silicon substrate at the internal separation layer to create an exposed surface opposite the first side of the single crystal silicon substrate and forming an array comprising a plurality of photosensitive elements and readout elements on the exposed surface.

Abstract: A method of manufacturing an imaging array includes providing a silicon tile having a first surface and a second, opposite surface. A buried dielectric layer is formed in the silicon tile between the first and second surfaces to define a bottom silicon layer between the first surface and the dielectric layer. A separation boundary is formed in the silicon tile between the second surface and the dielectric layer to define a top silicon layer between the dielectric layer and the separation boundary and a removable silicon layer between the separation boundary and the second surface. An oxide layer is formed on the first surface of the silicon tile and the silicon tile is bonded to a glass substrate at the oxide layer. The silicon tile is separated at the separation boundary to remove the removable silicon layer, exposing the top silicon layer. Semiconductive elements are formed using the exposed top silicon layer.

Abstract: A method of forming an imaging array includes providing a single crystal silicon substrate having an internal separation layer, forming a patterned conductive layer proximate a first side of the single crystal silicon substrate, forming an electrically conductive layer on the first side of the single crystal silicon substrate and in communication with the patterned conductive layer, securing the single crystal silicon substrate having the patterned conductive layer and electrically conductive layer formed thereon to a glass substrate with the first side of the single crystal silicon substrate proximate the glass substrate, separating the single crystal silicon substrate at the internal separation layer to create an exposed surface opposite the first side of the single crystal silicon substrate and forming an array comprising a plurality of photosensitive elements and readout elements on the exposed surface.

Abstract: A method of fabricating an imaging array includes providing a single crystal silicon substrate and bonding the single crystal silicon substrate to an insulating substrate. One or more portions of an exposed surface of the single-crystal silicon substrate are removed to form a pattern of first areas having a first height measured from the insulating substrate and second areas having a second height measured from the insulating substrate. Photosensitive elements are formed on the first areas and readout elements are formed on the second areas. The single-crystal silicon substrate is treated by hydrogen implantation to form an internal separation boundary and a portion of the single-crystal silicon substrate is removed at the internal separation boundary to form the exposed surface.