Patents by Inventor Jacky Vigneron

Jacky Vigneron has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for chemically passivating a surface of a product made of a III-V semiconductor material and the product obtained by such a method
    Patent number: 9514961
    Abstract: A method for chemically passivating a surface of a product made of a III-V semiconductor material in which a) a P(N) polymer film is formed by deposition in a solvent comprising liquid ammonia. The film is formed by deposition, without electrochemical assistance, in the solvent, in the presence of an oxidizing chemical additive comprising phosphorous and generating electrical charge carriers in said surface.
    Type: Grant
    Filed: June 12, 2012
    Date of Patent: December 6, 2016
    Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE—CNRS, ECOLE POLYTECHNIQUE, UNIVERSITE VERSAILLES SAINT-QUENTIN-EN-YVELINES
    Inventors: Arnaud Etcheberry, Anne-Marie Goncalves, Charles Mathieu, Jacky Vigneron, Nicolas Mézailles, Francoise Hervagault, Elaine Le Floch, Clémence Le Floch, Paul Le Floch
  • Method for the sulphidation treatment of III-V compound semiconductor surfaces
    Patent number: 6723578
    Abstract: Method for deoxidizing and passivating, by sulphidation, a surface of a III-V compound semiconductor material undergo strong oxidation in the presence of oxygen, wherein the surface to be passivated is immersed in a dilute aqueous solution containing sulphide ions with a concentration of between about 10−1M and 10−7M.
    Type: Grant
    Filed: May 30, 2002
    Date of Patent: April 20, 2004
    Assignee: Sagem SA
    Inventors: Dominique Lorans, Bruno Canava, Arnaud Etcheberry, Michel Herlem, Jacky Vigneron
  • Method for the sulphidation treatment of III-V compound semiconductor surfaces
    Publication number: 20020182840
    Abstract: Method for deoxidizing and passivating, by sulfidation, a surface of a III-V compound semiconductor material undergo strong oxidation in the presence of oxygen, wherein the surface to be passivated is immersed in a dilute aqueous solution containing sulfide ions with a concentration of between about 10−1M and 10−7M.
    Type: Application
    Filed: May 30, 2002
    Publication date: December 5, 2002
    Inventors: Dominique Lorans, Bruno Canava, Arnaud Etcheberry, Michel Herlem, Jacky Vigneron