Abstract: A light source (10) includes a light emitting component (32), such as a UV/blue light emitting diode or laser diode coated with a layer (60) of a phosphor material (64). The phosphor material converts a portion of the light emitted by the light emitting component to light of a longer wavelength, such as yellow light. The thickness d of the layer varies across the light emitting component in relation to the intensity of light emitted by the light emitting component. This maintains a uniform color of the emission from the light source while minimizing the loss in light intensity (brightness) due to the presence of the phosphor.

Abstract: A light source (10) includes a light emitting component (32), such as a UV/blue light emitting diode or laser diode coated with a layer (60) of a phosphor material (64). The phosphor material converts a portion of the light emitted by the light emitting component to light of a longer wavelength, such as yellow light. The thickness d of the layer varies across the light emitting component in relation to the intensity of light emitted by the light emitting component. This maintains a uniform color of the emission from the light source while minimizing the loss in light intensity (brightness) due to the presence of the phosphor.

Abstract: A light source (10) includes a light emitting component (32), such as a UV/blue light emitting diode or laser diode coated with a layer (60) of a phosphor material (64). The phosphor material converts a portion of the light emitted by the light emitting component to light of a longer wavelength, such as yellow light. The thickness d of the layer varies across the light emitting component in relation to the intensity of light emitted by the light emitting component. This maintains a uniform color of the emission from the light source while minimizing the loss in light intensity (brightness) due to the presence of the phosphor.

Abstract: A light source (10) includes a light emitting component (32), such as a UV/blue light emitting diode or laser diode. A layer (62, 162, 262, 362) of a phosphor material is spaced from the light emitting component by a layer (60, 160, 260, 360) of a material which is transmissive to the light emitted by the light emitting component. The phosphor material converts a portion of the light emitted by the light emitting component to light of a longer wavelength such as yellow light. In a preferred embodiment, the light transmissive layer valise in thickness over the light emitting component so that the phosphor is spaced further from the diode in regions where the emission is higher. This increases the Surface area of the phosphor in these regions and minimizes the effects of overheating and saturation on the phosphor emission.

Abstract: In a thin film field-effect transistor, source and drain electrodes each include at least one, respective, narrowed, elongated portion. These elongated source and drain portions are oriented in parallel and in adjacent relation to each other, and a respective, complete longitudinal section of each elongated portion overlays a gate electrode. The resulting FET may be fabricated with readily-achievable photolithographic alignment precision as between the source and drain electrode configuration and the gate electrode, and achieves acceptably low source-to-gate and drain-to-gate parasitic capacitances.