Patents by Inventor Jacob J. Richardson

Jacob J. Richardson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TRANSPARENT CONDUCTIVE STRUCTURE AND FORMATION THEREOF
    Publication number: 20170069797
    Abstract: Briefly, an embodiment comprises fabricating and/or uses of one or more zinc oxide crystals to form a transparent conductive structure.
    Type: Application
    Filed: September 4, 2015
    Publication date: March 9, 2017
    Inventors: Jacob J. Richardson, Evan C. O'Hara, Chanseob Shin
  • LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME
    Publication number: 20160218244
    Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.
    Type: Application
    Filed: September 25, 2013
    Publication date: July 28, 2016
    Inventors: Chan Seob SHIN, Hyoung Jin LIM, Kyoung Wan KIM, Yeo Jin YOON, Jacob J. RICHARDSON, Daniel ESTRADA, Evan C. O'HARA, Haoran SHI
  • SOLUTION DEPOSITION METHOD FOR FORMING METAL OXIDE OR METAL HYDROXIDE LAYER
    Publication number: 20160130719
    Abstract: A solution deposition method including: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.
    Type: Application
    Filed: November 10, 2014
    Publication date: May 12, 2016
    Inventors: Jacob J. Richardson, Evan C. O'Hara, Daniel Estrada
  • Successive ionic layer adsorption and reaction process for depositing epitaxial ZnO on III-nitride-based light emitting diode and light emitting diode including epitaxial ZnO
    Patent number: 8957427
    Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.
    Type: Grant
    Filed: June 23, 2014
    Date of Patent: February 17, 2015
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jacob J. Richardson, Daniel Estrada, Evan O'Hara, Haoran Shi, Shin Chanseob, Yeojin Yoon
  • Low temperature continuous circulation reactor for the aqueous synthesis of ZnO films, nanostructures, and bulk single crystals
    Patent number: 8926750
    Abstract: A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: January 6, 2015
    Assignee: The Regents of the University of California
    Inventors: Jacob J. Richardson, Frederick F. Lange
  • SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION PROCESS FOR DEPOSITING EPITAXIAL ZNO ON III-NITRIDE-BASED LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE INCLUDING EPITAXIAL ZNO
    Publication number: 20140306236
    Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.
    Type: Application
    Filed: June 23, 2014
    Publication date: October 16, 2014
    Inventors: Jacob J. RICHARDSON, Daniel ESTRADA, Evan O'HARA, Haoran SHI, Shin CHANSEOB, Yeojin YOON
  • Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays
    Patent number: 8841691
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: September 23, 2014
    Assignee: The Regents of the University of California
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun-Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura
  • Successive ionic layer adsorption and reaction process for depositing epitaxial ZnO on III-nitride-based light emitting diode and light emitting diode including epitaxial ZnO
    Patent number: 8796693
    Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: August 5, 2014
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jacob J. Richardson, Daniel Estrada, Evan C. O'Hara, Haoran Shi, Shin Chanseob, Yeojin Yoon
  • SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION PROCESS FOR DEPOSITING EPITAXIAL ZNO ON III-NITRIDE-BASED LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE INCLUDING EPITAXIAL ZNO
    Publication number: 20140175452
    Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.
    Type: Application
    Filed: December 26, 2012
    Publication date: June 26, 2014
    Applicant: SEOUL SEMICONDUCTOR CO., LTD.
    Inventors: Jacob J. RICHARDSON, Daniel ESTRADA, Evan C. O'HARA, Haoran SHI, Shin CHANSEOB, Yeojin YOON
  • HIGH BRIGHTNESS LIGHT EMITTING DIODE COVERED BY ZINC OXIDE LAYERS ON MULTIPLE SURFACES GROWN IN LOW TEMPERATURE AQUEOUS SOLUTION
    Publication number: 20140103361
    Abstract: A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
    Type: Application
    Filed: December 19, 2013
    Publication date: April 17, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Ingrid Koslow, Jun Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura
  • LOW TEMPERATURE CONTINUOUS CIRCULATION REACTOR FOR THE AQUEOUS SYNTHESIS OF ZnO FILMS, NANOSTRUCTURES, AND BULK SINGLE CRYSTALS
    Publication number: 20140083352
    Abstract: A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material.
    Type: Application
    Filed: November 27, 2013
    Publication date: March 27, 2014
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Jacob J. Richardson, Frederick F. Lange
  • Low temperature continuous circulation reactor for the aqueous synthesis of ZnO films, nanostructures, and bulk single crystals
    Patent number: 8668774
    Abstract: A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material.
    Type: Grant
    Filed: April 15, 2010
    Date of Patent: March 11, 2014
    Assignee: The Regents of the University of California
    Inventors: Jacob J. Richardson, MaryAnn E. Lange
  • High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution
    Patent number: 8637334
    Abstract: A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
    Type: Grant
    Filed: November 3, 2010
    Date of Patent: January 28, 2014
    Assignee: The Regents of the University of California
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Ingrid Koslow, Jun Seok Ha, Steven P. DenBaars, Shuji Nakamura, Maryann E. Lange
  • LIGHT EMITTING DIODE STRUCTURE UTILIZING ZINC OXIDE NANOROD ARRAYS ON ONE OR MORE SURFACES, AND A LOW COST METHOD OF PRODUCING SUCH ZINC OXIDE NANOROD ARRAYS
    Publication number: 20130328012
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Application
    Filed: August 19, 2013
    Publication date: December 12, 2013
    Applicant: The Regents of the University of California
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun-Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura
  • Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays
    Patent number: 8536618
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Grant
    Filed: November 3, 2010
    Date of Patent: September 17, 2013
    Assignee: The Regents of the University of California
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun Seok Ha, Steven P. DenBaars, Shuji Nakamura, Maryann E. Lange
  • HIGH BRIGHTNESS LIGHT EMITTING DIODE COVERED BY ZINC OXIDE LAYERS ON MULTIPLE SURFACES GROWN IN LOW TEMPERATURE AQUEOUS SOLUTION
    Publication number: 20110266551
    Abstract: A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
    Type: Application
    Filed: November 3, 2010
    Publication date: November 3, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Ingrid Koslow, Jun Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura, Maryann E. Lange
  • LIGHT EMITTING DIODE STRUCTURE UTILIZING ZINC OXIDE NANOROD ARRAYS ON ONE OR MORE SURFACES, AND A LOW COST METHOD OF PRODUCING SUCH ZINC OXIDE NANOROD ARRAYS
    Publication number: 20110108873
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Application
    Filed: November 3, 2010
    Publication date: May 12, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura
  • LIGHT EMITTING DIODES WITH ZINC OXIDE CURRENT SPREADING AND LIGHT EXTRACTION LAYERS DEPOSITED FROM LOW TEMPERATURE AQUEOUS SOLUTION
    Publication number: 20110101414
    Abstract: A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.
    Type: Application
    Filed: November 3, 2010
    Publication date: May 5, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Daniel B. Thompson, Jacob J. Richardson, Steven P. DenBaars, Frederick F. Lange, MaryAnn E. Lange, Jin Hyeok Kim
  • LOW TEMPERATURE CONTINUOUS CIRCULATION REACTOR FOR THE AQUEOUS SYNTHESIS OF ZnO FILMS, NANOSTRUCTURES, AND BULK SINGLE CRYSTALS
    Publication number: 20100263586
    Abstract: A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material.
    Type: Application
    Filed: April 15, 2010
    Publication date: October 21, 2010
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Jacob J. Richardson, Frederick F. Lange, Maryann E. Lange