Abstract: A wireless communication device includes a first circuit including a baseband circuit and a radio circuit, and at least one frontend module (FEM) remote from the first circuit and placed in close proximity to and coupled to at least one radio-frequency (RF) antenna. The FEM is coupled to the first circuit via interface circuitry. An FEM comprises a frontend (FE) circuit including one or more low-noise amplifiers (LNAs), one or more power amplifiers (PAs), and at least one of a multi-pole switch and a multiplexer. The multi-pole switch and the multiplexer being implemented on a first side of the FEM coupled to the interface circuitry. The interface circuitry includes at least some of filters, splitters, multi-pole switches, and multiplexers to reduce a count of interconnect routes to the at least one FEM.

Abstract: A wireless communication device includes a first circuit including a baseband circuit and a radio circuit, and at least one frontend module (FEM) remote from the first circuit and placed in close proximity to and coupled to at least one radio-frequency (RF) antenna. The FEM is coupled to the first circuit via interface circuitry. An FEM comprises a frontend (FE) circuit including one or more low-noise amplifiers (LNAs), one or more power amplifiers (PAs), and at least one of a multi-pole switch and a multiplexer. The multi-pole switch and the multiplexer being implemented on a first side of the FEM coupled to the interface circuitry. The interface circuitry includes at least some of filters, splitters, multi-pole switches, and multiplexers to reduce a count of interconnect routes to the at least one FEM.

Abstract: Forming a wafer level chip scale flip chip package includes determining isolation requirements of an integrated circuit formed in a semi conductive substrate from package signal connections of the wafer level chip scale flip chip package. Operation may further include, based upon the integrated circuit characteristics, selecting a thickness of at least one dielectric layer isolating a top metal layer of the integrated circuit from the package signal connections of the wafer level chip scale flip chip package, determining a minimum pitch of the package signal connections of the wafer level chip scale flip chip package, and determining a maximum lateral distance from the signal pad to a servicing package signal connection of the wafer level chip scale flip chip package and determining a position of the servicing package signal connection of the wafer level chip scale flip chip package based upon the maximum lateral distance.