Abstract: A method of selectively sensing the concentration of a target gas in polluted ambient air comprises the steps of: —providing a target gas sensor (220) sensitive to the target gas; —providing a first gas flow derived from the ambient air, from which first flow the target gas is substantially removed; —providing a second gas flow derived from the ambient air, substantially comprising the same target gas concentration as the ambient air; —exposing the target gas sensor to the first gas flow during a first time interval, and obtaining from the sensor a first output signal (Smf); —exposing the target gas sensor to the second gas flow during a second time interval not overlapping with the first time interval, and obtaining a second output signal (Smu); —calculating the difference (S?) between the first and the second output signals; calculating the concentration of the target gas from the calculated signal difference (S?).

Abstract: An imprint lithography method is disclosed for reducing a difference between an intended topography and an actual topography arising from a part of a patterned layer of fixed imprintable medium. The method involves imprinting an imprint lithography template into a layer of flowable imprintable medium to form a patterned layer in the imprintable medium, and fixing the imprintable medium to form a patterned layer of fixed imprintable medium. Local excitation is applied to the part of the patterned layer to adjust a chemical reaction in the part of the patterned layer to reduce the difference between the intended topography and the actual topography arising from the part of the fixed patterned layer of imprintable medium when this is subsequently used as a resist for patterning the substrate. An imprint medium suitable for imprint lithography with the method is also disclosed.

Abstract: An electrical element, such as a thin-film transistor, is defined on a flexible substrate, in that the substrate is attached to a carrier by an adhesive layer, and is delaminated after definition of the transistor. This is for instance due to illumination by UV-radiation. An opaque coating is provided to protect any semiconductor material. A heat treatment is preferably given before application of the layers of the transistor to reduce stress in the adhesive layer.

Abstract: A method of selectively sensing the concentration of a target gas in polluted ambient air comprises the steps of: —providing a target gas sensor (220) sensitive to the target gas; —providing a first gas flow derived from the ambient air, from which first flow the target gas is substantially removed; —providing a second gas flow derived from the ambient air, substantially comprising the same target gas concentration as the ambient air; —exposing the target gas sensor to the first gas flow during a first time interval, and obtaining from the sensor a first output signal (Smf); —exposing the target gas sensor to the second gas flow during a second time interval not overlapping with the first time interval, and obtaining a second output signal (Smu); —calculating the difference (S?) between the first and the second output signals; calculating the concentration of the target gas from the calculated signal difference (S?).

Abstract: An imprint lithography method is disclosed for reducing a difference between an intended topography and an actual topography arising from a part of a patterned layer of fixed imprintable medium. The method involves imprinting an imprint lithography template into a layer of flowable imprintable medium to form a patterned layer in the imprintable medium, and fixing the imprintable medium to form a patterned layer of fixed imprintable medium. Local excitation is applied to the part of the patterned layer to adjust a chemical reaction in the part of the patterned layer to reduce the difference between the intended topography and the actual topography arising from the part of the fixed patterned layer of imprintable medium when this is subsequently used as a resist for patterning the substrate. An imprint medium suitable for imprint lithography with the method is also disclosed.

Abstract: An electrical element, such as a thin-film transistor, is defined on a flexible substrate, in that the substrate is attached to a carrier by an adhesive layer, and is delaminated after definition of the transistor. This is for instance due to illumination by UV-radiation. An opaque coating is provided to protect any semiconductor material. A heat treatment is preferably given before application of the layers of the transistor to reduce stress in the adhesive layer.

Abstract: An electrical element, such as a thin-film transistor, is defined on a flexible substrate, in that the substrate is attached to a carrier by an adhesive layer, and is delaminated after definition of the transistor. This is for instance due to illumination by UV-radiation. An opaque coating is provided to protect any semiconductor material. A heat treatment is preferably given before application of the layers of the transistor to reduce stress in the adhesive layer.

Abstract: The invention relates to a method of manufacturing a microsystem and further to such microsystem. With the method a microsystem can be manufactured by stacking pre-processed foils (10) having a conductive layer (11a,11b) on at least one side. After stacking, the foils (10) are sealed, using pressure and heat. Finally the microsystems are separated from the stack (S). The pre-processing of the foils (preferably done by means of a laser beam) comprises a selection of the following steps: (A) leaving the foil intact, (B) locally removing the conductive layer, (C) removing the conductive layer and partially evaporating the foil (10), and (D) removing both the conductive layer as well as foil (10), thus making holes in the foil (10). In combination with said stacking, it is possible to create cavities, freely suspended cantilevers and membranes. This opens up the possibility of manufacturing various microsystems, like MEMS devices and microfluidic systems.

Abstract: The invention relates to a method of manufacturing a MEMS capacitor microphone and further to such MEMS capacitor microphone. With the method a MEMS capacitor microphone can be manufactured by stacking pre-processed foils (10) having a conductive layer (11a,11b) on at least one side. After stacking, the foils (10) are sealed, using pressure and heat. Finally the MEMS capacitor microphones are separated from the stack (S). The pre-processing of the foils (preferably done by means of a laser beam) comprises a selection of the following steps: (A) leaving the foil intact, (B) locally removing the conductive layer, (C) removing the conductive layer and partially evaporating the foil (10), and (D) removing both the conductive layer as well as foil (10), thus making holes in the foil (10). In combination with said stacking, it is possible to create cavities and membranes. This opens up the possibility of manufacturing MEMS capacitor microphone.

Abstract: The invention relates to a method of manufacturing a microsystem and further to such microsystem. With the method a microsystem can be manufactured by stacking pre-processed foils (10) having a conductive layer (11a, 11b) on at least one side. After stacking, the foils (10) are sealed, using pressure and heat. Finally the microsystems are separated from the stack (S). The pre-processing of the foils (preferably done by means of a laser beam) comprises a selection of the following steps: (A) leaving the foil intact, (B) locally removing the conductive layer, (C) removing the conductive layer and partially evaporating the foil (10), and (D) removing both the conductive layer as well as foil (10), thus making holes in the foil (10). In combination with said stacking, it is possible to create cavities, freely suspended cantilevers and membranes. This opens up the possibility of manufacturing various microsystems, like MEMS devices and microfluidic systems.

Abstract: A vertical interconnect (15) in an electronic device (10) is manufactured non-photolithographically. This is done by modifying a surface (20,30) of either a metal layer (3) or an intermediate layer of an electrically insulating material (21), and subsequently depositing a composition with a first and a second polymer. Phase separation of the two polymers will lead to a first (6) and a second sub-layer (7), of which the first sub-layer (6) is removed. An upper layer (9) of electrically conducting material can be deposited then or after a further etching step. This results in the vertical interconnect (15).

Abstract: A vertical interconnect (15) in an electronic device (10) is manufactured non-photolithographically. This is done by modifying a surface (20,30) of either a metal layer (3) or an intermediate layer of an electrically insulating material (21), and subsequently depositing a composition with a first and a second polymer. Phase separation of the two polymers will lead to a first (6) and a second sub-layer (7), of which the first sub-layer (6) is removed. An upper layer (9) of electrically conducting material can be deposited then or after a further etching step. This results in the vertical interconnect (15).

Abstract: A filter which includes a stack of deformable foils which are locally attached to one another, and also includes comparatively rigid members which are situated to both sides of the stack of foils, extend parallel to the surface of the foils and each of which is attached to an outer surface of the stack of foils by way of a buffer member. The foils can be moved away from one another in a main direction by means of the rigid members, which main direction extends transversely of the surface, in order to form ducts between the foils. The buffer member is then contractible mainly in a direction which extends parallel to the surface and transversely of the ducts.

Abstract: The invention relates to a method of manufacturing a filter which includes a number of ducts formed by a number of deformable foils. The foils have electrically insulating outer sides, with electrically conductive bands which are separated from one another by electrically insulating bands. The electrically conductive bands on a first outer side of the foil are arranged so as to be offset relative to the electrically conductive bands on the second outer side of the foil. The foils are stacked. The oppositely situated electrically insulating bands of the oppositely situated foils are interconnected. The foils are ultimately moved away from one another in a direction transversely of the foils in order to form the ducts between the interconnected foils. At least one detached, electrically insulating section is situated in a prolongation of at least one electrically conductive band and is not connected to an oppositely situated foil.