Abstract: The invention relates to a photobioreactor for cultivating photosynthetic micro-organisms, comprising: a) at least one cultivation container (1) for containing the culture medium (3) of the micro-organisms, b) photovoltaic cells (2) isolated from the culture medium (3), emitting light towards the culture medium (3), and c) means (4) for powering the photovoltaic cells (2) in order to operate the photovoltaic cells in light emission mode.

Abstract: The invention relates to a photobioreactor for cultivating photosynthetic micro-organisms, comprising: a) at least one cultivation container (1) for containing the culture medium (3) of the micro-organisms, b) photovoltaic cells (2) isolated from the culture medium (3), emitting light towards the culture medium (3), and c) means (4) for powering the photovoltaic cells (2) in order to operate the photovoltaic cells in light emission mode.

Abstract: A device and a method for X-ray imaging detection of objects on a moving subject, according to a direction of advance, the device includes an X-ray source, a fixed X-ray detector including at least one column formed of m pixels adapted to detect the radiation coming from the interaction of the flux of X-rays with the subject, beam-shaping element adapted to produce a curtain X-ray beam with a width close than that of a column of pixels of the X-ray detector and directed to the column of pixels, two rigid lateral supports adapted to support the X-ray detector, and the beam-shaping element. The X-ray detector is sensitive, has a response time lower than 10 ?s, and is adapted to carry out a series of n samplings, each having a time-duration te, during the passage of the subject in front of the column of pixels during the time Tp, generating n column images, the sampling time-duration te being shorter than or equal to the time of transit tp of one point of the subject in front of a column of pixels.

Abstract: The relation relates to a method and a radiological imaging device. A subject (4) is illuminated by a luminous flux (1) generated by an X-ray source (2). This luminous flux (1) is a pulse having a duration tp shorter than 1 ms. The signals S derived from the interaction of the luminous flux (1) with the subject (4) are then detected by means of an X-ray detector (5) having a response time tr shorter than 0.1 ms. Applications possible in medical imaging (mammography, dental care, . . . ).

Abstract: The invention relates to a method for producing an X-ray detector for imaging. By increasing the epitaxial layers, a GaAs material (1) is placed on a substrate n<+> (or p<+>) (2). p<+> (or n<+>)< >ions are then implanted on the external face (11) of the material (1) in order to form a p<+>/i/n<+> structure after annealing. Ohmic contacts (12) are subsequently disposed on the two faces and individual detectors (pixels) (13) are produced over the entire surface using means of dry or chemical masking and pickling. The epitaxial material (1) has a thickness d? that is sufficient to absorb effectively the X photons and means can be used to reduce the residual doping of said material (1). The material obtained in this way is suitable for medical (mammography, dental, etc.) and industrial imaging.

Abstract: An X-ray detector (401, 501, 601) has a detecting element that comprises a semiconductor heterostructure where an undoped Germanium layer (402, 502) is enclosed between two oppositely doped Gallium Arsenide layers (403, 404, 503, 505).

Abstract: The relation relates to a method and a radiological imaging device. A subject (4) is illuminated by a luminous flux (1) generated by an X-ray source (2). This luminous flux (1) is a pulse having a duration tp shorter than 1 ms. The signals S derived from the interaction of the luminous flux (1) with the subject (4) are then detected by means of an X-ray detector (5) having a response time tr shorter than 0.1 ms. Applications possible in medical imaging (mammography, dental care, . . . ).

Abstract: The invention relates to a method for producing an X-ray detector for imaging. By increasing the epitaxial layers, a GaAs material (1) is placed on a substrate n<+> (or p<+>) (2). p<+> (or n<+>)< >ions are then implanted on the external face (11) of the material (1) in order to form a p<+>/i/n<+> structure after annealing. Ohmic contacts (12) are subsequently disposed on the two faces and individual detectors (pixels) (13) are produced over the entire surface using means of dry or chemical masking and pickling. The epitaxial material (1) has a thickness d′ that is sufficient to absorb effectively the X photons and means can be used to reduce the residual doping of said material (1). The material obtained in this way is suitable for medical (mammography, dental, etc.) and industrial imaging.

Abstract: An X-ray detector (401, 501, 601) has a detecting element that comprises a semiconductor heterostructure where an undoped Germanium layer (402, 502) is enclosed between two oppositely doped Gallium Arsenide layers (403, 404, 503, 505).