Patents by Inventor Jacques Chevallier

Jacques Chevallier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of producing an n-type diamond with high electrical conductivity
    Publication number: 20050266606
    Abstract: The invention relates to a method of producing an n-type diamond. The inventive method comprises an n-doping stage during which a donor species is vacuum diffused in a diamond that was initially doped with an acceptor, in order to form donor groups containing the donor species, at a temperature that is less than or equal to the dissociation temperature of the complexes formed between the acceptor and the donor species.
    Type: Application
    Filed: June 3, 2005
    Publication date: December 1, 2005
    Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFQUE-CNRS, UNIVERSITE DE VERSAILLES ST-QUENTIN EN YVELINES
    Inventors: Jacques Chevallier, Zephirin Teukam, Dominique Ballutaud
  • Process for neutralizing acceptor atoms in p-type InP
    Patent number: 5059551
    Abstract: Process for neutralizing acceptor atoms in p-type InP.This process consists of subjecting to epitaxy a p-doped InP layer (4) and then a not intentionally doped Ga.sub.0.47 In.sub.0.53 As layer (6) on an InP semiinsulating substrate (2), followed by hydrogenating the InP layer exposing the assembly to a hydrogen plasma (8) with a power density below 0.07 W/cm.sup.2 at the most 250.degree. C.
    Type: Grant
    Filed: April 10, 1990
    Date of Patent: October 22, 1991
    Assignee: Etat Francais, represente par le Ministre Delegue des Postes, Telecommunications et de l'Espace (Centre National d'Etudes des Telecommunications)
    Inventors: Jacques Chevallier, Jean-Claude Pesant, Andrei Mircea, Rose Benoir
  • Method of fabrication of a P+nn+ diode and of a bipolar transistor incorporating this diode utilizing the effect of neutralization of donor atoms by atomic hydrogen
    Patent number: 4936781
    Abstract: A method of fabrication of a p+nn+ diode and a bipolar transistor which incorporates this diode, uitilizing the effect of neutralization of donor atoms by atomic hydrogen consists in forming a layer of Group III-Group V material of n+ type on a substrate of Group III-Group V material, locally implanting acceptor ions with a view to forming, in the surface, the p+ region of the diode adjacent to an intermediary n+ region forming two metal contacts at the surface of the layer of Group III-Group V material situated in proximity to one another and with respect to the p+ and n+ regions of the diode, the portion of the intermediary n+ region contiguous with the p+ region being without of metal contact, and hydrogenating the structure, to form in that portion an n region, with the other portion of the intermediary region being provided with a metal contact being constituting the n+ region of the p+nn+ diode.
    Type: Grant
    Filed: August 14, 1989
    Date of Patent: June 26, 1990
    Assignee: Centre National d'Etudes des Telecommunications
    Inventors: Andrei Mircea, Jacques Chevallier
  • Chromium coating with high hardness capable of resisting wear, strain surface fatigue and corrosion all at the same time
    Patent number: 4486285
    Abstract: By cathode sputtering in a reactive environment, a coating of a solid solon of chromium and an element such as nitrogen, carbon, phosphorus, boron or silicon is deposited. The content of the above element is higher than the saturation limit of the solid solution in chromium. It ranges between T.sub.m =0.2% and T.sub.M =3% by weight for carbon and between T.sub.m =0.04% and T.sub.M =3.5% by weight for nitrogen.
    Type: Grant
    Filed: September 2, 1982
    Date of Patent: December 4, 1984
    Assignee: Centre Stephanois De Recherches Mecanmiques Hydromecanique et Frottement
    Inventors: Andre Aubert, Jacques Chevallier, Antoine Gaucher, Jean-Paul Terrat