Abstract: A vapor and ion source includes, in a low pressure chamber, an anode (M), a cathode (K) and a device (A) for applying a magnetic field (B). The cathode (K) is an equipotential cavity (10) provided with an aperture (11) in a front plate. A magnetic field (B) orthogonal to the front plate is applied thereto. The material to be ionized (15) is arranged inside the cavity.

Abstract: A plasma generator according to the invention comprises a chamber (2) at a first potential (V1) filled with a gas at a low pressure and a transparent electrode surface comprised of wires, grid or perforated plate (3) at a second potential (V2) higher than (V1). Thus, an electron (4) present in the chamber will be oscillating on both sides of the transparent electrode surface (3) for providing secondary electrons (11 and 12) which create in turn other secondary electrons (13-14, 15-16). At each occurence of an electron pair, one ion (i1, i2, i3, . . . ) is created.

Abstract: The instant invention relates to an electron source which contains, in a low pressure chamber, an anode (A), a cathode (K) and means for applying a magnetic field (13). The cathode is constituted by an equipotential cavity (10) provided with an aperture (11) on the side of the anode. The magnetic field is applied parallel to the anode-cathode direction at the aperture.