Abstract: A rechargeable battery module including: a plurality of battery cells, each of the battery cells having a vent hole; a first holder accommodating one side of the battery cells; a second holder accommodating an opposite side of the battery cells, the second holder being coupled to the first holder with the battery cells therebetween; a first plate on one side of the second holder and an outlet group, the outlet group including a plurality of outlets at positions corresponding to the vent holes of a respective one of the battery cells; and a second plate on one side of the first plate and configured to intercept an emission discharged through the vent hole and the outlet group.

Abstract: In one example, a semiconductor device comprises a main substrate having a top side and a bottom side, a first electronic component on the top side of the main substrate, a second electronic component on the bottom side of the main substrate, a substrate structure on the bottom side of the main substrate adjacent to the second electronic component, and an encapsulant structure comprising an encapsulant top portion on the top side of the main substrate and contacting a side of the first electronic component, and an encapsulant bottom portion on the bottom side of the main substrate and contacting a side of the second electronic component and a side of the substrate structure. Other examples and related methods are also disclosed herein.

Abstract: A hybrid electric vehicle includes an engine, a drive motor, and a controller configured to determine a boarding state or a leaving state of a passenger, to allow a vehicle to enter a first mode for pick-up driving or a second mode for drop-off driving, and to control the vehicle based on the entered mode and the boarding or leaving state after the entering, and a method of controlling the same.

Abstract: A touch detection module includes driving electrodes extending parallel to each other, sensing electrodes crossing the driving electrodes, and a touch driver circuit for supplying touch driving signals to the driving electrodes and for detecting touch sensing signals through the sensing electrodes to determine touch position coordinates. The touch driver circuit selects between a group driving scheme and a sequential driving scheme for at least one frame. According to the group driving scheme, the touch driver circuit sorts the driving electrodes into groups, simultaneously drives driving electrodes in a same group among the groups, and drives the groups at different times. According to the sequential driving scheme, the touch driving circuit sequentially drives the driving electrodes.

Abstract: A method of mitigating motion sickness in a passenger including learning a motion sickness prediction model based on state information of a vehicle or the passenger, reaction information of the passenger, and motion sickness-related information, predicting reactions of the passenger to a current state of the vehicle or the passenger and possibility of motion sickness using the learned motion sickness prediction model, and providing information on the motion sickness mitigation methods to the passenger or controlling the vehicle based on the predicted reactions of the passenger and possibility of motion sickness. The motion sickness-related information includes one or more of a determination result of whether motion sickness occurs to the passenger, motion sickness state information, and motion sickness reaction information.

Abstract: A semiconductor memory device includes a bit line on a substrate and extending in a first direction, first and second active pillars on the bit line, the first active pillar including a first horizontal portion coupled to the bit line and a first vertical portion extending from the first horizontal portion, the second active pillar including a second horizontal portion coupled to the bit line and a second vertical portion extending from the second horizontal portion. First and second word lines are on the first and second horizontal portions of the first and second active pillars, respectively, and extend in a second direction crossing the first direction. A first insulating layer is between the first and second word lines. A first and second side surfaces of the first and second horizontal portions face each other. The first insulating layer includes an air gap between the first and second side surfaces.

Abstract: Biochemical carriers are provided. Each of the biochemical carriers includes: biochemical molecules having a sequence into which digital data information is encoded; a carrier particle composed of a polymer matrix and in which the biochemical molecules are connected to the surface or inside of the polymer matrix; and an index code introduced into the carrier particle. Also provided is a method for fabricating biochemical carriers. The fabrication method includes: encoding digital data into a sequence of biochemical molecules; synthesizing the biochemical molecules based on the encoded sequence; mixing the biochemical molecules with a photocurable material; curing the mixture to obtain carrier particles including a polymer matrix; and introducing an index code into the carrier particles simultaneously with or separately from the curing. Also provided is a method for restoring digital data from the biochemical carrier.

Abstract: In one example, an electronic device comprises a substrate comprising a conductive structure and an inner side and an outer side, a first electronic component over the inner side of the substrate and coupled with the conductive structure, a lid over the substrate and the first electronic component and comprising a first hole in the lid, and a thermal interface material between the first electronic component and the lid. The thermal interface material is in the first hole. Other examples and related methods are also disclosed herein.

Abstract: An embodiment armrest assembly for a vehicle includes an armrest rotatably coupled to an armrest board and configured to be extended from the armrest board by rotating forward or to be housed in the armrest board by rotating and standing and a speed-reduction damper mechanism connecting the armrest and the armrest board and configured to make a rotational speed of the armrest uniform by reducing the rotational speed when the armrest rotates to be extended.

Abstract: An embodiment armrest assembly for a vehicle includes an armrest including a main body and a lid, an armrest board to which the armrest is rotatably coupled and in which the armrest is accommodated in an erect state, and a skirt coupled to a rear bezel housing of the lid and to the armrest board and correspondingly covering a rear space of the lid when the armrest is rotated forward, wherein the skirt has a panel shape and includes a hard material.

Abstract: Provided is a technology capable of consistently and stably forming a slope of a gate pulse modulation waveform by discharging a gate line by a predetermined current by using a regulator and the like in gate pulse modulation.

Abstract: The present invention relates to a plastic resin composite comprising metal oxide nanorods and a preparation method therefor. The plastic resin composite comprising metal oxide nanorods according to the present invention is light in weight and has excellent mechanical strength by comprising: a fiber composite, which includes fibers and metal nanorods formed on the surface of the fibers; and a plastic resin combined with the fiber composite via interlocking.

Abstract: A circuit board according to an embodiment includes a first insulating layer; a second insulating layer disposed on the first insulating layer and including a cavity; a pad disposed on the first insulating layer and having a top surface exposed through the cavity; wherein the cavity of the second insulating layer includes: a bottom surface positioned higher than the top surface of the first insulating layer; and an inner wall extending from the bottom surface, wherein the inner wall includes: a first inner wall extending from the bottom surface and having a first inclination angle; and a second inner wall extending from the first inner wall and having a second inclination angle different from the first inclination angle.

Abstract: Disclosed are a SiC MOSFET power semiconductor device and a method of manufacturing the same. More particularly, a SiC MOSFET power semiconductor device and a method of manufacturing the same are disclosed, including a trench gate having a hexagonal shape in a plan or layout view, to improve on-resistance (Rsp) characteristics and increase channel density.

Abstract: A touch sensor includes first touch cells disposed in a first touch sensing area, the first touch cells each including a first touch pattern and a first dummy pattern, and second touch cells disposed in a second touch sensing area, the second touch cells each including a second touch pattern and a second dummy pattern. An area of a first dummy pattern area in which the first dummy pattern is disposed is greater than an area of a second dummy pattern area in which the second dummy pattern is disposed.

Abstract: Disclosed herein are an apparatus and method for a multi-cloud service platform. The apparatus includes one or more processors and executable memory for storing at least one program executed by the one or more processors. The at least one program may receive a service request from a user client device, generate a multi-cloud infrastructure service using multiple clouds in response to the service request, make the multiple clouds interoperate with mufti-cloud infrastructure in order to provide the multi-cloud infrastructure service, and generate a multi-cloud application runtime environment corresponding to the multi-cloud infrastructure service.

Abstract: Embodiments relate to laser welding methods, monitoring methods, and monitoring systems for a secondary battery. A laser welding method for a secondary battery includes performing laser welding on a positive electrode base having a thin-film shape in which a plurality of positive electrode base tabs are formed at a side, a negative electrode base having a thin-film shape in which a plurality of negative electrode base tabs are formed at a side, and a thin-film multi-tab to be joined to each of the positive electrode base and the negative electrode base, a welded portion in which the multi-tab is welded with the positive electrode base and the negative electrode base being melting-joined by using a laser such that a plurality of welding spots is formed on the welded portion.

Abstract: A semiconductor manufacturing facility includes: a process chamber in which an amorphous carbon layer (ACL) process in which amorphous carbon is deposited so that an ACL is formed, is performed; a vacuum pump in which a residual gas generated in the process chamber is discharged from the process chamber while the ACL process is performed; a chamber exhaust pipe through which the process chamber and the vacuum pump communicate with each other; a plasma reactor configured to form a plasma reaction region using plasma; and a gas supplying device configured to supply a treatment gas to the plasma reactor.

Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

Abstract: Disclosed are a semiconductor device (1) including a MOSPET region and an integrated diode region, and a manufacturing method thereof. More particularly, a semiconductor device (1) including a silicon carbide (SiC) MOSPET region and an integrated Schottky bather diode that reduce forward voltage drop (Vf), device area, and switching oscillation resulting from parasitic inductance are disclosed.