Patents by Inventor Jae-Chan Kwak
Jae-Chan Kwak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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THERMOPLASTIC POLYURETHANE COMPOSITION FOR INJECTION MOLDING AND A METHOD FOR MANUFACTURING THE SAME
Publication number: 20240132652Abstract: The present disclosure relates to a thermoplastic polyurethane composition for injection molding and a method for manufacturing the same. Specifically, the thermoplastic polyurethane composition includes 0.5% by weight to 10.0% by weight of a sulfonate diol, 13% by weight to 60% by weight of an isocyanate, 30% by weight to 70% by weight of an ether-containing polyester polyol, and 5% by weight to 40% by weight of a chain extender.Type: ApplicationFiled: April 17, 2023Publication date: April 25, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, DONGSUNG CHEMICAL Co., Ltd., HANWHA ADVANCED MATERIALS CORPORATIONInventors: Boo Youn An, In Soo Han, Sang Hyuk Lee, Jae Chan Lee, Hoon Jeong Kim, Gyu Min Lee, Sung Bok Kwak, Dong Ju Lee, Jae Yong Lee -
Publication number: 20190161861Abstract: Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.Type: ApplicationFiled: January 31, 2019Publication date: May 30, 2019Inventors: Jae Chan KWAK, Sung Kyu KANG, Hun JUNG, Byoung Ha CHO
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Patent number: 10233542Abstract: Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.Type: GrantFiled: June 26, 2013Date of Patent: March 19, 2019Assignee: JUSUNG ENGINEERING CO., LTD.Inventors: Jae Chan Kwak, Sung Kyu Kang, Hun Jung, Byoung Ha Cho
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Publication number: 20180226468Abstract: Disclosed is a method of manufacturing a capacitor having a high dielectric constant, which prevents a surface of a dielectric layer from being deteriorated due to a vacuum break and prevents the quality of a dielectric layer from being degraded due to a physical stress occurring when a semiconductor substrate is being loaded and unloaded.Type: ApplicationFiled: July 18, 2016Publication date: August 9, 2018Inventors: Dong Won SEO, Jae Chan KWAK, Byoung Ha CHO
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Publication number: 20180130674Abstract: Disclosed are an apparatus and method for processing a substrate. The apparatus includes a chamber, a susceptor disposed in a lower portion of the chamber, a chamber lid disposed on the susceptor, a first source gas distributor installed in the chamber lid to distribute a source gas, a second source gas distributor installed in the chamber lid to distribute a source gas, and a first purge gas distributor installed in the chamber lid to distribute a purge gas. At least one substrate is disposed on the susceptor, and the first purge gas distributor is installed between the first and second source gas distributors.Type: ApplicationFiled: April 18, 2016Publication date: May 10, 2018Inventors: Tae Seong HAN, Dae Bong KANG, Jae Chan KWAK, Ka Lam KIM, Doo Young KIM, Dong Won SEO, Sang Du LEE, Seong Kwang LEE, Byoung Ha CHO, Dong Seok CHUN, Chul-Joo HWANG
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Publication number: 20160153086Abstract: Disclosed is a substrate processing apparatus which is capable of improving uniformity of thin film to be deposited onto a substrate, and also freely adjusting productivity, wherein the substrate processing apparatus may include a process chamber for providing a process space; a substrate supporter, which is rotatably provided in the process space, for supporting at least one substrate; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributing part for spatially separating the process space into first and second reaction spaces, and inducing the different kinds of deposition reactions in the respective first and second reaction spaces, wherein the gas distributing part is provided in the chamber lid.Type: ApplicationFiled: July 23, 2014Publication date: June 2, 2016Applicant: Jusung Engineering Co., Ltd.Inventors: Jae Chan KWAK, Byoung Ha CHO, Chul-Joo HWANG
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Publication number: 20150337441Abstract: Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.Type: ApplicationFiled: June 26, 2013Publication date: November 26, 2015Applicant: JUSUNG ENGINEERING CO., LTD.Inventors: Jae Chan KWAK, Sung Kyu KANG, Hun JUNG, Byoung Ha CHO
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Publication number: 20150140786Abstract: Disclosed is an apparatus and method for processing substrate, which facilitates to prevent a substrate form being damaged, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting with the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributing part provided in the chamber lid, wherein the gas distributing part distributes source gas to a source gas distribution area on the substrate supporter, distributes reactant gas to a reactant gas distribution area which is separated from the source gas distribution area, and distributes purge gas to a space between the source gas distribution area and the reactant gas distribution area.Type: ApplicationFiled: May 28, 2013Publication date: May 21, 2015Applicant: Jusung Engineering Co., Ltd.Inventor: Jae Chan Kwak
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Patent number: 8105647Abstract: The present invention relates to an oxide film forming method and an oxide deposition apparatus, which make it possible to form an oxide film at a low temperature of 350° C. or less by respectively supplying a silicon-containing gas including at least one of SiH4, Si2H6, Si3H8, TEOS, DCS, HCD and TSA, a purge gas, and a reaction gas including at least one of O2, N2O, O3, H2O and H2O2 into a reaction space continuously and simultaneously while rotating gas injector, and to form an oxide film with a uniform thickness along a step of a lower structure with a micro-pattern since step coverage is improved due to an atomic layer deposition process.Type: GrantFiled: April 6, 2007Date of Patent: January 31, 2012Assignee: Jusung Engineering Co., Ltd.Inventors: Jin-Ho Lee, Young-Ki Han, Jae-Chan Kwak
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Publication number: 20070234957Abstract: The present invention relates to an oxide film forming method and an oxide deposition apparatus, which make it possible to form an oxide film at a low temperature of 350° C. or less by respectively supplying a silicon-containing gas including at least one of SiH4, Si2H6, Si3H8, TEOS, DCS, HCD and TSA, a purge gas, and a reaction gas including at least one of O2, N2O, O3, H20 and H2O2 into a reaction space continuously and simultaneously while rotating gas injector, and to form an oxide film with a uniform thickness along a step of a lower structure with a micro-pattern since step coverage is improved due to an atomic layer deposition process.Type: ApplicationFiled: April 6, 2007Publication date: October 11, 2007Applicant: JUSUNG ENGINEERING CO., LTD.Inventors: Jin Ho LEE, Young Ki HAN, Jae Chan KWAK