Abstract: Disclosed are a charge sensitive amplifier, a detector and an X-ray photographing apparatus including the same. The charge sensitive amplifier includes an amplification unit that amplifies an electric charge input thereto, a capacitor that has one end of the capacitor, connected to an input terminal of the amplification unit, and the other end connected to an output terminal of the amplification unit, and a buffer unit that has an input terminal and an output terminal which is connected to the input terminal of the amplification unit and the one end of the capacitor. Impedance at the input terminal of the buffer unit is lower than impedance at the output terminal of the buffer unit.

Abstract: A silicon photomultiplier detector cell may include a photodiode region and a readout circuit region formed on a same substrate. The photodiode region may include a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with first type impurities; a second semiconductor layer doped with second type impurities; and/or a first epitaxial layer between the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may contact the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may be doped with the first type impurities at a concentration lower than a concentration of the first type impurities of the first semiconductor layer.

Abstract: A method of calibrating a first threshold voltage that is a reference of X-ray detection for each unit cell of a plurality of unit cells of an X-ray detector may comprise detecting an X-ray by using a plurality of second threshold voltages for each of a plurality of X-rays having spectra at different energy levels; determining a correspondence relationship between energies having a maximum intensity in the spectra of X-rays and third threshold voltages at which a maximum number of photons having a same energy intensity are detected; and/or calibrating the first threshold voltage based on the determined correspondence relationship.

Abstract: A voltage reset method may include: acquiring a voltage that is changed with time by using an input photon; determining a timing for resetting the acquired voltage by using time information in a period where the acquired voltage increases; and/or resetting the acquired voltage on a basis of the determined voltage reset timing. A voltage reset apparatus may include: an acquisition unit configured to acquire a voltage that is changed with time by using an input photon; a determination unit configured to determine a timing for resetting the acquired voltage by using time information in a period where the acquired voltage increases; and/or a reset unit configured to reset the acquired voltage on a basis of the determined voltage reset timing.

Abstract: Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn).

Abstract: An optical touch panel may include a plurality of light-sensing areas. The plurality of light-sensing areas may be integrally formed with pixels in a display panel or may be formed on the display panel, in order to sense incident light from outside the optical touch panel. A method of driving an optical touch panel may include sensing a change in an output from a plurality of light-sensing areas between two time points and determining that there is an optical input when the change in the output is greater than or equal to a first reference value that is defined in advance. The light-sensing areas may be integrally formed with pixels in a display panel or formed on a surface of the display panel, for sensing incident light from outside the optical touch panel.

Abstract: An optical touch panel may be used remotely to control a large-sized display device. According to a method of fabricating the optical touch panel, an optical sensor transistor for sensing light and a switch transistor for drawing data can be formed together on the same substrate by using a relatively simple process. The optical touch panel may include an optical sensor transistor and a switch transistor. The optical sensor transistor may be configured to sense light and the switch transistor may be configured to draw data from the optical sensor transistor. The optical sensor transistor may include a light sensitive oxide semiconductor material as a channel layer. The switch transistor may include a non-light sensitive oxide semiconductor material as a channel layer.

Abstract: Large-scale X-ray detectors and methods of manufacturing the same are provided, the large-scale X-ray detectors include a photoconductor layer configured to generate electrical charges according to an incident X-ray using an entire area of the photoconductor layer, a common electrode on an upper surface of the photoconductor layer, a plurality of pixel electrodes, configured to convert the electrical charges into electrical signals, on a lower surface of the photoconductor layer and divided into a plurality of groups, and a plurality of application-specific integrated circuits (ASICs) each corresponding to one of the groups. Each ASIC is configured to process the electrical signals conveyed via the pixel electrodes in the corresponding group. The ASICs process the electrical signals so that seamless image information is collectively generated by the ASICs with respect to the entire area of the photoconductor layer.

Abstract: An apparatus for generating an image may include a plurality of scintillator layers configured to convert an incident beam into an optical signal; a plurality of micro cells configured to turn on or off depending on whether or not the micro cells detect the optical signal; a reaction depth determining unit configured to detect a decay pattern of the optical signal, on the basis of on/off signals of the micro cells, and configured to determine a type of the scintillator layers with which the incident beam has reacted; and/or a reading unit configured to decide an occurrence location of the incident beam and then generates a photographed image.

Abstract: A silicon photomultiplier detector cell may include a photodiode region and a readout circuit region formed on a same substrate. The photodiode region may include a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with first type impurities; a second semiconductor layer doped with second type impurities; and/or a first epitaxial layer between the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may contact the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may be doped with the first type impurities at a concentration lower than a concentration of the first type impurities of the first semiconductor layer.

Abstract: An X-ray detector includes a photoconductor, a first diffusion barrier film on a first surface of the photoconductor, at least one pixel electrode on the first diffusion barrier film, a signal transmitting unit to process an electrical signal output from the at least one pixel electrode, and a common electrode on a second surface of the photoconductor opposite to the first surface of the photoconductor.

Abstract: A display panel including a display part including a plurality of sub-pixels configured to display a plurality of colors, and a plurality of data lines connected with the sub-pixels; a first test part configured to supply a test signal to (2K?1)th data lines (‘K’ is an integer above 0) by each color for the sub-pixels among the plurality of data lines; and a second test part configured to supply a test signal to 2Kth data lines by each color for the sub-pixels among the plurality of data lines when the first test part supplies the test signal. Further, a polarity of the test signal supplied by the second test part is opposite to a polarity of the test signal supplied by the first test part.

Abstract: A paste for a photoelectric conversion layer used in an X-ray detector includes photoconductive particles, an organic polymer binder, a first organic solvent to dissolve the organic polymer binder, and a second organic solvent. The second organic solvent has a boiling point in a range of between about 150° C. and about 210° C., inclusive.

Abstract: A method of calibrating a first threshold voltage that is a reference of X-ray detection for each unit cell of a plurality of unit cells of an X-ray detector may comprise detecting an X-ray by using a plurality of second threshold voltages for each of a plurality of X-rays having spectra at different energy levels; determining a correspondence relationship between energies having a maximum intensity in the spectra of X-rays and third threshold voltages at which a maximum number of photons having a same energy intensity are detected; and/or calibrating the first threshold voltage based on the determined correspondence relationship.

Abstract: A driver circuit outputs a result of classifying and counting photons based on one or more energy levels to a column line. The driver circuit includes a multiplexer for receiving the result from a counter, a driving inverter for receiving a signal from the multiplexer and a power supply, and a switch connected between the power supply and an input terminal of the driving inverter.

Abstract: A transistor according to example embodiments may include a channel layer, a source and a drain respectively contacting ends of the channel layer, a gate electrode separated from the channel layer, a gate insulating layer interposed between the channel layer and the gate electrode, and/or an insertion layer that is formed between the channel layer and the gate insulating layer. The insertion layer may have a work function different from that of the channel layer.

Abstract: A method and apparatus for managing a key for secure storage of data. The apparatus includes a main controller configured to process a command, a cipher unit configured to encrypt a first key to form an encrypted key or encrypt data to form encrypted data based on a result of the main controller processing the command, and decrypt the encrypted key or the encrypted data based on the result of the main controller processing the command, a hash unit configured to hash the first key according to control of the main controller, a decrypted key memory configured to store the first key, and an encrypted key memory configured to store the encrypted key.

Abstract: A thin film transistor (TFT) may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer. The channel layer may include an oxide semiconductor material. The source electrode and the drain electrode may face each other on the channel layer. The protective layer may be under the source electrode and the drain electrode and/or may cover the channel layer. The gate electrode may be configured to apply an electric field to the channel layer. The gate insulating layer may be interposed between the gate electrode and the channel layer.

Abstract: A method and apparatus for adaptively transmitting the same data, i.e., multicast/broadcast data, according to channel quality to a receiving group including one or more terminals that request the same service in a wireless network. A base station obtains feedback on channel quality indications (CQIs) from a plurality of terminals, selects a transmission technique that satisfies desired service quality based on the CQIs, and transmits data to the terminals included in a receiving group by using the selected transmission technique. The CQIs to be transmitted from the terminals in the receiving group to the base station are transmitted through a previously allocated common CQI feedback channel. In the present invention, in order to reduce a CQI feedback channel capacity, the base station does not allocate a common CQI feedback channel with respect to each reception terminal and allocates radio resources according to CQI levels.

Abstract: A transistor may include: a gate insulting layer, a gate electrode formed on a bottom side of the gate insulating layer, a channel layer formed on a top side of the gate insulating layer, a source electrode that contacts a first portion of the channel layer, and a drain electrode that contacts a second portion of the channel layer. The channel layer may have a double-layer structure, including an upper layer and a lower layer. The upper layer may have a carrier concentration lower than that of the lower layer. The upper layer may be doped with a carrier acceptor in order to have an electrical resistance higher than that of the lower layer.