Abstract: A method of an IAB node may comprise: receiving an RRC message including measurement control information from a base station; transmitting RRC reconfiguration information including the measurement control information to each of a plurality of terminals; receiving a measurement report message including a measurement report generated by each of the plurality of terminals based on the measurement control information from each of the plurality of terminals; and grouping the measurement report messages received from the plurality of terminals into a grouped message report message, and transmitting the grouped measurement report message to the base station according to a grouped measurement reporting periodicity.

Abstract: A method of a terminal, according to an exemplary embodiment of the present disclosure, may include: requesting access to a mobile integrated access backhaul (IAB) based on cell search; receiving a tracking area (TA) update procedure stop request message from an Access and Mobility Management Function (AMF) of a core network; and deactivating a TA update procedure based on the TA update procedure stop request message.

Abstract: A method of an integrated access and backhaul (IAB) node may include: receiving, from a target base station, one or more user equipment (UE) context setup request messages including terminal radio resource reconfiguration information; sharing context information including the terminal radio resource reconfiguration information with a source IAB-distributed unit 1 (IAB-DU1); configuring terminal reconfiguration information using the shared context information; and transmitting one or more UE context setup response messages including the terminal reconfiguration information to the target base station in response to the one or more UE context setup request messages.

Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on a winding axis to define a core and an outer circumference. The first electrode includes a first active material portion coated with an active material layer and a first uncoated portion not coated with an active material layer along a winding direction. At least a part of the first uncoated portion is defined as an electrode tab by itself. The first uncoated portion includes a first portion adjacent to the core of the electrode assembly, a second portion adjacent to the outer circumference of the electrode assembly, and a third portion interposed between the first portion and the second portion. The first portion or the second portion has a smaller height than the third portion in the winding axis direction.

Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on an axis to define a core and an outer circumference. The first electrode includes an uncoated portion at a long side end thereof and exposed out of the separator along a winding axis direction of the electrode assembly. A part of the uncoated portion is bent in a radial direction of the electrode assembly to form a bending surface region that includes overlapping layers of the uncoated portion, and in a partial region of the bending surface region, the number of stacked layers of the uncoated portion is 10 or more in the winding axis direction of the electrode assembly.

Abstract: An electrode assembly, a battery, a battery pack and a vehicle including the same are provided. In the electrode assembly, the uncoated portion of an electrode includes a segment region divided into a plurality of segments, and the segment region includes a plurality of segment groups separated by a group separation pitch along a winding direction. One end of the electrode assembly includes a plurality of segment alignments. In winding turns corresponding to the plurality of segment alignments, group separation pitches of segment groups disposed in a same winding turn are substantially identical, and separation pitches of the segment groups is greater in a winding turn of a region adjacent to the outer circumference of the electrode assembly than in a winding turn of a region adjacent to the core of the electrode assembly.

Abstract: The polyamide-imide block copolymer according to the present invention makes it possible to provide a polyamide-imide film having excellent thermal stability and chemical resistance and, at the same time, having excellent mechanical properties.

Abstract: The present disclosure relates to a poly(amide-imide) copolymer in which at least one of an imide repeating unit and an amide repeating unit is substituted with a specific functional group, and a composition and a polymer film comprising the same.

Abstract: Disclosed in an embodiment is a semiconductor device comprising a semiconductor structure, which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein: the first conductive semiconductor layer comprises a first super lattice layer comprising a plurality of first sub layers and a plurality of second sub layers, the first and second sub layers being alternately arranged; the semiconductor structure emits ions of indium, aluminum, and a first and second dopant during a primary ion irradiation; the intensity of indium ions emitted from the active layer includes a maximum indium intensity peak; the doping concentration of the first dopant emitted from the first conductive semiconductor layer includes a maximum concentration peak; the maximum indium intensity peak is disposed to be spaced from the maximum concentration peak in a first direction; th

Abstract: The present disclosure relates to a III-nitride semiconductor light-emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer doped with a p-type dopant, an active layer disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and including a quantum well layer to generate light by recombination of electrons and holes, and a diffusion barrier layer disposed between the quantum well layer and the p-type nitride semiconductor layer to be in contact with both layers, having a surface formed to make the interface with the p-type nitride semiconductor layer smooth, and to prevent diffusion of the p-type dopant into the quantum well layer.

Abstract: The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 100 ? in an n-side contact layer.

Abstract: The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 300 ? in an n-side contact layer.