Abstract: A semiconductor light emitting device may include an n-type semiconductor layer, an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and first and second n-type electrode fingers, and a p-type electrode formed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and a p-type electrode finger. A distance between n-type and p-type electrodes may be constant to significantly reduce a phenomenon of concentration of a current in a specific region of an electrode.

Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, an insulating region formed along the outer edges of an upper surface of the second conductivity-type semiconductor layer, and an ohmic-electrode layer disposed on the second conductivity-type semiconductor layer.

Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A first electrode is electrically connected to the first conductivity-type semiconductor layer. A light-transmissive conductive layer is disposed on the second conductivity-type semiconductor layer. A second electrode includes a reflective metal layer and an insulating layer.

Abstract: A system and method for connecting a global positioning system (GPS) device with a digital image processing device and inputting position information into an image file captured by the digital image processing device. A system and method for inputting position information into a captured image employ a digital image processing device which generates an image file by capturing an image, and stores the image file, a GPS device which receives position information from a GPS satellite at regular time intervals; when the digital image processing device is connected with the GPS device, a GPS information storage unit which receives position information from the GPS device and stores the position information, and a GPS information input control unit which inputs position information excluding a timestamp, into an image file.

Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

Abstract: A method and system for performing serial data communication between a main device and an external module connected to the main device. The data communication system and method include a main device, and an external module connected to the main device and communicating data with the main device. The external module transmits its identification information to the main device before the external module and the main device communicate the data between each other, and the main device receives the identification information from the external module, confirms its connection to the external module, and transmits an identification information confirmation signal to the external module.

Abstract: A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.

Abstract: A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.

Abstract: A GaN-based LED comprises a substrate; an an-type GaN layer formed on the substrate; an active layer formed on a predetermined region of the n-type GaN layer; a p-type GaN layer formed on the active layer; a transparent electrode formed on the p-type GaN layer; a p-electrode formed on the transparent electrode; an n-type electrode formed on the n-type GaN layer on which the active layer is not formed; and a protective film formed on a resulting structure between the transparent electrode and the n-type electrode, the protective film being composed of a plasma-oxidized transparent layer.

Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

Abstract: Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.

Abstract: A method and system for performing serial data communication between a main device and an external module connected to the main device. The data communication system and method include a main device, and an external module connected to the main device and communicating data with the main device. The external module transmits its identification information to the main device before the external module and the main device communicate the data between each other, and the main device receives the identification information from the external module, confirms its connection to the external module, and transmits an identification information confirmation signal to the external module.

Abstract: A system and method for connecting a global positioning system (GPS) device with a digital image processing device and inputting position information into an image file captured by the digital image processing device. A system and method for inputting position information into a captured image employ a digital image processing device which generates an image file by capturing an image, and stores the image file, a GPS device which receives position information from a GPS satellite at regular time intervals; when the digital image processing device is connected with the GPS device, a GPS information storage unit which receives position information from the GPS device and stores the position information, and a GPS information input control unit which inputs position information excluding a timestamp, into an image file.

Abstract: Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.

Abstract: Disclosed are an asymmetric Y-shaped optical waveguide structure and an optical transceiver using the structure. The asymmetric Y-shaped optical waveguide structure includes a main axis optical waveguide extended in a longitudinal direction; and a branch optical waveguide extended from an extension start point in the main axis optical waveguide in a longitudinal direction as much as a predetermined region and then diverged outside. The main axis optical waveguide and the branch optical waveguide have effective refractive indexes, the magnitude relation of which is reversed for optical signals having first and second wavelength range. The optical transceiver includes an asymmetric Y-shaped optical waveguide structure, an optical fiber optically coupled to the structure for transmitting/receiving of the bi-directional optical signal, a laser diode and a photodiode. Accordingly, it is possible to miniaturize the optical transceiver, reduce a packaging cost, and improve reliability of the optical transceiver.

Abstract: A solder alloy includes tin (Sn) of 50-80 wt %, antimony (Sb) of 0.05-10 wt %, silver (Ag) of 0.0001-5 wt %, phosphorus (P) of 0.0001-0.5 wt %, unavoidable impurities, and lead for the remaining wt %. Numerical limitation to the content amount of the respective elements and the rest effects the solder alloy to have an improved fatigue-proof characteristic for a soldering area.

Abstract: A leadless alloy for soldering containing 0.1 to 5.0% bismuth, 0.1 to 5.0% silver, 0.1 to 3.0% antimony, 0.1 to 5.5% copper, 0.001 to 0.01% phosphorus, 0.01 to 0.1% germanium and 81.4 to 99.6% tin by weight.