Patents by Inventor Jae Hong KWON

Jae Hong KWON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of fabricating the same
    Patent number: 10269958
    Abstract: A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: April 23, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae Hong Kwon, Youngho Lee, Hoon Lim, Hyungsoon Jang, Eunguk Chung
  • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20180219094
    Abstract: A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.
    Type: Application
    Filed: March 22, 2018
    Publication date: August 2, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jae Hong Kwon, Youngho Lee, Hoon Lim, Hyungsoon Jang, Eunguk Chung
  • Semiconductor device and method of fabricating the same
    Patent number: 9978865
    Abstract: A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: May 22, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae Hong Kwon, Youngho Lee, Hoon Lim, Hyungsoon Jang, Eunguk Chung
  • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20170194493
    Abstract: A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.
    Type: Application
    Filed: December 20, 2016
    Publication date: July 6, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jae Hong KWON, Youngho LEE, Hoon LIM, Hyungsoon JANG, Eunguk CHUNG